Sample Preparation and Synthesis

The amount dissolved is 1.2 kg in terms of titanium. This is a dual power source type high frequency induction melting furnace that concentrates the buoyancy and heating roles of 150 kW and 100 kW. Features: 1. Rapid dissolution possible. 2. High purity and high melting point metals can be melted. 3. Alloy melting with uniform composition. 4.Free selection of flux is possible. 5. Promote refining reactions by actively stirring the molten metal using electromagnetic force.

The blue LEDs changed the world's lights and won a Nobel Prize. This equipment is a highly versatile crystal growth system for nitrides. We can fabricate optical devices (UV-LED, UV-LD, PD) and electronic devices (high electron mobility transistors).

This is a fully automated, computer-controlled film deposition system capable of fabricating samples with complex thin film multilayer structures. Automated transfer robot is used to move between sputter deposition, electron beam deposition, and molecular beam epitaxy chambers, allowing the system to be used for a wide range of fundamental thin film research.

Thermal plasma is generated and the thermal and chemical reaction zone at very high temperatures can be utilized to process inorganic materials into spherical particles. Sub-millimetre particles can be produced by ensuring sufficient droplet flight distance. It can also be applied to high-melting-point, brittle intermetallic compounds which are difficult to spheronise using conventional atomizers.

In materials synthesis research under ultrahigh pressure, a large-capacity high-pressure apparatus is required that can stably grow single crystals, etc. for long periods of time. This belt-type high-pressure apparatus mass-produces hexagonal boron nitride single crystals, which are essential for the two-dimensional atomic devices, and is provided to more than 350 research groups in 35 countries.

This propellant gun is capable of accelerating and impacting a flying object (30 mmφ x 45 mmL) to a velocity of approximately 2 km/s and generating an impact pressure of up to about 50 GPa for approximately one-millionth of a second. This apparatus can realize characteristic high-pressure environments not only for high-pressure material synthesis, but also for meteorite impact simulation in planetary science.

HVPE (halide vapor phase epitaxy) equipment for gallium oxide, an ultra-wide bandgap semiconductor promising for future power device applications. Ultra-fast growth of high-quality films is possible owing to the original reactor design and chemical reaction control.