A new paper on Computational evaluation of electronic states and chemical bonding in semiconducting 3d transition metal silicides has been published by IMAI, Motoharu et al.
Electro-ceramics Group

TitleElectronic structure and chemical bonding in semiconducting 3d transition-metal silicides CrSi₂, Mn₄Si₇, and β-FeSi₂

AuthorImai, Motoharu; Arai, Masao

Biblio. Info.Jpn. J. Appl. Phys., 64(6), 61003-1–61003-6, (2025)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/ade487

A new paper on Experimental and computational investigations on physical properties of SrSi₂ has been published by IMAI, Motoharu et al.
Electro-ceramics Group

TitleStrontium disilicide SrSi₂: Narrow band gap semiconductor or Weyl semimetal?

AuthorImai, Motoharu; Udono, Haruhiko; Alinejad, Babak; Nakane, Takayuki; Takahashi, Hiroki; Arai, Masao

Biblio. Info.J. Alloy. Compd., 1032, 181074-1–181074-9, (2025)

URLhttps://www.sciencedirect.com/science/article/pii/S0925838825026350?via%3Dihub

TERAJI, Tokuyuki / Semiconductor Defect Design Group will be speaking at the invited lecture.

DateNovember 30 - December 5, 2025

URLhttps://www.mrs.org/meetings-events/annual-meetings/2025-mrs-fall-meeting

YAMANE, Ryo / Environmental Circulation Composite Material Group will be speaking at the invited lecture.

DateSeptember 28 - October 3, 2025

URLhttps://smartconf.jp/content/airapt29/

NAGATA, Takahiro / Nano Electronics Device Materials Group will be speaking at the invited lecture.

DateOctober 12-16, 2025

URLhttps://www.electrochem.org/248

OHASHI, Naoki / Electro-ceramics Group will be speaking at the invited lecture.

DateOctober 5–9, 2025

URLhttps://igpac2025.com/

A new paper on the interface control of n-oxide semiconductor/p-Si tunnel field-effect transistors for power-saving semiconductor devices has been published by NAGATA, Takahiro, CHIKYO, Toyohiro et al.
Nano Electronics Device Materials Group

TitleEffects of interface formation process on electronic properties of n-type Ti0.3Zn0.7O1.3/p-type Si stack structure

AuthorOgawa, Kenta; Chikyow, Toyohiro; Daimon, Yuki; Ogura, Atsushi; Nagata, Takahiro

Biblio. Info.Jpn. J. Appl. Phys., 64(5), 05SP25-1–05SP25-7, (2025)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/add0be

A new paper on A mixed solvent enables efficient nylon recycling, including PA11, with >98% recovery of polymers and fillers while preserving properties for sustainable reuse has been published by TAMURA, Kenji et al.
Environmental Circulation Composite Material Group

TitleRoom‐Temperature Material Recycling/Upcycling of Polyamide Waste Enabled by Cosolvent‐Tunable Dissolution Kinetics

AuthorTanks, Jonathon; Tamura, Kenji

Biblio. Info.Angew. Chem.-Int. Edit., -1–-11, (2025)

URLhttps://mdr.nims.go.jp/datasets/910dc912-2433-4644-8521-017f93cc054a

A new paper on A method for generally predicting chemical bonding at the metal–oxide interface including interface reaction and its implementation to a free software, InterChemBond has been published by YOSHITAKE, Michiko.
Nano Electronics Device Materials Group

TitleGeneral Prediction of Interface Chemical Bonding at Metal–Oxide Interface with the Interface Reaction Considered

AuthorYoshitake, Michiko

Biblio. Info.Materials, 18(13), 3096-1–3096-17, (2025)

URLhttps://www.mdpi.com/1996-1944/18/13/3096

A new paper on Air-gap structures were formed on (001) β-Ga₂O₃ using crystallographic anisotropic HCl gas etching has been published by OSHIMA, Takayoshi et al.
Ultra-wide Bandgap Semiconductors Group

TitleFabrication of air bridges on (100) β-Ga₂O₃ using crystallographic HCl gas etching

AuthorOshima, Takayoshi; Oshima, Yuichi

Biblio. Info.AIP Adv., 15(5), 55207-1–55207-7, (2025)

URLhttps://pubs.aip.org/aip/adv/article/15/5/055207/3345950/Fabrication-of-air-bridges-on-100-Ga2O3-using

A new paper on A step-and-terrace structure was achieved on the (001) β-Ga₂O₃ surface using an aqueous tetramethylammonium hydroxide solution has been published by OSHIMA, Takayoshi.
Ultra-wide Bandgap Semiconductors Group

TitleStep-and-terrace surface formation on (001) β-Ga₂O₃ by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer

AuthorOshima, Takayoshi

Biblio. Info.Jpn. J. Appl. Phys., 64(8), 88001-1–88001-5, (2025)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/adf380

A new paper on Normally-off boron-doped diamond MOSFETs are fabricated on a 150 nm-thick epitaxial layer with breakdown voltage over 1.7 kV has been published by LIU, Jiangwei et al.
Semiconductor Defect Design Group

TitleNormally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV

AuthorLiu, J.; Teraji, T.; Da, B.; Koide, Y.

Biblio. Info.Appl. Phys. Lett., 127(4), 42601-1–42601-4, (2025)

URLhttps://pubs.aip.org/aip/apl/article/127/4/042601/3356215/Normally-off-boron-doped-diamond-MOSFETs-with-a

A new paper on polarity-controlled GaAs/Ge/GaAs heterostructures on the {111}-oriented substrates has been published by OHTAKE, Akihiro,HAYASHI, Yusuke et al.
Semiconductor Epitaxial Structures Group group

TitleControlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures

AuthorOhtake, Akihiro; Hayashi, Yusuke

Biblio. Info.Appl. Phys. Lett., 126(20), 201601-1–201601-6, (2025)

URLhttps://pubs.aip.org/aip/apl/article/126/20/201601/3347176/Controlled-polarity-inversion-in-GaAs-Ge-GaAs-111

A new paper on the effect of ligands in perovskite structures: a collaborative study with Bandung Institute of Technology has been published by YAMASHITA, Yoshiyuki et al.
Nano Electronics Device Materials Group

TitleThe effect of surface ligands on the surface chemical states and photoluminescence characteristics in cesium lead bromide perovskite nanocrystals

AuthorAsharuddin, Muhammad; Hidayat, Rahmat; Nurunnizar, Adhita Asma; Nursam, Natalita Maulani; Yandri, Valdi Rizki; Arsyad, Waode Sukmawati; Suwardy, Joko; Indari, Efi Dwi; Yamashita, Yoshiyuki

Biblio. Info.RSC Adv., 15(37), 30727–30741, (2025)

URLhttps://pubs.rsc.org/en/content/articlelanding/2025/ra/d5ra05099e

A new paper on Surface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleSurface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator

AuthorGu, Keyun; Zhang, Zilong; Huang, Jian; Koide, Yasuo; Koizumi, Satoshi; Liao, Meiyong

Biblio. Info.Appl. Phys. Lett., 126(22), 221901-1–221901-6, (2025)

URLhttps://pubs.aip.org/aip/apl/article/126/22/221901/3348240/Surface-desorption-properties-of-hydrogen

A new paper on Ultra-High Sensitivity, Wide-Range Thermometry Based on High-Quality Microscale Diamond Resonators has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleUltra-High Sensitivity, Wide-Range Thermometry Based on High-Quality Microscale Diamond Resonators

AuthorZhao, Wen; Chen, Guo; Teraji, Tokuyuki; Koide, Yasuo; Toda, Masaya; Liao, Meiyong

Biblio. Info.Adv. Mater., -1–-10, (2025)

URLhttps://advanced.onlinelibrary.wiley.com/doi/10.1002/adma.202502012

A new paper on Reduction in dislocation density in α-gallium oxide by epitaxial lateral over growth using a stripe mask with ultra-narrow windows has been published by OSHIMA, Yuichi et al.
Ultra-wide Bandgap Semiconductors Group

TitleEpitaxial lateral overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows

AuthorOshima, Yuichi; Shinohe, Takashi

Biblio. Info.Appl. Phys. Lett., 126(20), 202104-1–202104-5, (2025)

URLhttps://pubs.aip.org/aip/apl/article/126/20/202104/3347404/Epitaxial-lateral-overgrowth-of-c-plane-Ga2O3

A new paper on Effect of controlled surface arsenic stoichiometry of GaAs surfaces on the luminescence properties of embedded nanostructures after oxidation has been published by MANO, Takaaki , OHTAKE, Akihiro et al.
Semiconductor Epitaxial Structures Group

TitleEffects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation

AuthorMa, Zhao; Mano, Takaaki; Ohtake, Akihiro; Kuroda, Takashi

Biblio. Info.J. Appl. Phys., 137(24), 243102-1–243102-7, (2025)

URLhttps://pubs.aip.org/aip/jap/article/137/24/243102/3350691/Effects-of-arsenic-oxides-on-GaAs-surfaces-on

A new paper on an effective post-treatment method of Nitrosyl fluoride gas treatment of GaN for improving electronic properties has been published by NAGATA, Takahiro et al.
Nano Electronics Device Materials Group

TitleEffects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

AuthorNagata, Takahiro; Matsuda, Asahiko; Teramoto, Takashi; Gerlach, Dominic; Shen, Peng; Ueda, Shigenori; Kimura, Takako; Dussarrat, Christian; Chikyow, Toyohiro

Biblio. Info.JOURNAL OF APPLIED PHYSICS, 137(9), 95304-1-95304-, (2025)

URLhttps://pubs.aip.org/aip/jap/article/137/9/095304/3338311/Effects-of-nitrosyl-fluoride-based-gas-treatment

A new paper on a novel approach for fabricating highly oriented, textured MgB2, discussing how its anisotropic properties affect critical current density, irreversibility field, and pinning characteristics, has been published by SUZUKI, Tohru,VASYLKIV, Oleg et al.
Polycrystalline Optical Material Group

TitleTowards high degree of c-axis orientation in MgB2

AuthorM. A. Grigoroscuta, G. Aldica, M. Burdusel, V. Sandu, A. Kuncser, I. Pasuk, A. Ionescu, T.S. Suzuki, O. Vasylkiv, P. Badica

Biblio. Info.Journal of Magnesium and Alloys, 10[8]Aug, 2173-2184, (2022)

URLhttps://doi.org/10.1016/j.jma.2021.10.013

A new paper on the preparation and analysis of heterogeneous at nano- and microscale high-entropy Ti, Ta, Hf, Zr multiphase diboride with resistance to deformation at temperatures up to 2000℃ has been published by VASYLKIV, Oleg et al.
Polycrystalline Optical Material Group

TitleHigh-Entropy Ti, Zr, Hf, Ta Multiphase Diboride with Deformation Resistance up to 2000℃

AuthorBadica, Petre; Grigoroscuta, Mihai Alexandru; Kuncser, Andrei Cristian; Vasylkiv, Oleg

Biblio. Info.ADVANCED ENGINEERING MATERIALS, -1--, (2025)

URLhttps://advanced.onlinelibrary.wiley.com/doi/10.1002/adem.202402723

A new paper on Plasma-free HCl gas etching on (011) β-Ga₂O₃ enables near-vertical processing with minimal damage, showing high potential for microfabrication has been published by OSHIMA, Takayoshi,OSHIMA, Yuichi et al.
Ultra-wide Bandgap Semiconductors Group

TitleNear-vertical plasma-free HCl gas etching on (011) β-Ga₂O₃

AuthorOshima, Takayoshi; Oshima, Yuichi

Biblio. Info.JAPANESE JOURNAL OF APPLIED PHYSICS,　64(1),　18003-1-18003-, (2022)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/ada706

A new paper on A perspective on diamond MEMS magnetic sensors has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleA perspective on diamond MEMS magnetic sensors

AuthorZhang, Zilong; Gu, Keyun; Toda, Masaya; Liao, Meiyong

Biblio. Info.APPLIED PHYSICS LETTERS, 126(10),　100501-1-100501-,　(2022)

URLhttp://dx.doi.org/10.1063/5.0255014

A new paper on Photo-response performance regulation of a type-Ib diamond-based photodetector by H2 annealing and ozone treatment has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitlePhoto-response performance regulation of a type-Ib diamond-based photodetector by H2 annealing and ozone treatment

AuthorGu, Keyun; Zhang, Zilong; Ohsawa, Takeo; Imura, Masataka; Huang, Jian; Koide, Yasuo; Liao, Meiyong

Biblio. Info.JOURNAL OF MATERIALS CHEMISTRY C, 13(13),　6816-6822,　(2022)

URLhttp://dx.doi.org/10.1039/d4tc05169f

A new paper on Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleEffect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface

AuthorWu, Kongping; Cheng, Renxiang; Zhang, Leng; Wang, Wenxiu; Li, Fangzhen; Liao, Meiyong

Biblio. Info.SURFACES AND INTERFACES,　56,　105666-1-105666-,　(2022)

URLhttp://dx.doi.org/10.1016/j.surfin.2024.105666

A new paper on orange-yellow-emitting ‘Sr-rich’ α-SiAlON phosphor with 93% PL intensity at 150 ºC that can be synthesized in single phase powder form for white LEDs has been published by ESTILI, Mehdi, SUZUKI, Tohru et al.
Optical Ceramics Group

TitleRobust and orange-yellow-emitting Sr-rich polytypoid α-SiAlON (Sr3Si24Al6N40:Eu2+) phosphor for white LEDs

AuthorEstili, Mehdi; Xie, Rong-Jun; Takahashi, Kohsei; Funahashi, Shiro; Suzuki, Tohru S.; Hirosaki, Naoto

Biblio. Info.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,　25(1),　2396276-1-2396276-19,　(2022)

URLhttp://dx.doi.org/10.1080/14686996.2024.2396276

A new paper on disorder of crystal structure in metal cluster halides studied by x-ray diffraction and first principle calculation methods has been published by OHASHI, Naoki et al.
Electro-ceramics Group

TitleUnraveling the Origin of Unusual Cs Atom Disorder in Cesium Octahedral Molybdenum Halide Cluster Compounds, Cs2[{Mo6Xi 8}Xa 6] (X = Cl and Br)

AuthorSaito, Norio; Cordier, Stephane; Ohsawa, Takeo; Saito, Noriko; Takei, Takahiro; Grasset, Fabien; Cross, Jeffrey Scott; Ohashi, Naoki

Biblio. Info.INORGANIC CHEMISTRY,　-1-10,　(2022)

URLhttp://dx.doi.org/10.1021/acs.inorgchem.4c04648

A new paper on A sieries of new phosphors showing high quantum efficiency and thermal stability for NIR luminescence under blue light excitation were obtained has been published by LI, Jiguang et al.
Polycrystalline Optical Material Group

TitleCa2+/Si4+ Modification of the (Gd,Lu)AG Garnet for Enhanced Broadband Cr3+ Luminescence of High Thermal Stability

AuthorWang, Yun; Pan, Zhiyuan; Feng, Sihan; Gao, Lijie; Wang, Xuejiao; Zhu, Qi; Li, Ji-Guang

Biblio. Info.INORGANIC CHEMISTRY,　63(52),　24971-24983,　(2022)

URLhttp://dx.doi.org/10.1021/acs.inorgchem.4c04702

Crystallographic gas etching was performed on gallium oxide power semiconductors using a safe and non-toxic forming gas has been published by OSHIMA, Takayoshi et al.
Ultra-wide Bandgap Semiconductors Group

TitlePlasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure

AuthorOshima, Takayoshi; Togashi, Rie; Oshima, Yuichi

Biblio. Info.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,　25(1),　2378683-1-2378683-8,　(2022)

URL 1http://dx.doi.org/10.1080/14686996.2024.2378683

URL 2https://mdr.nims.go.jp/concern/publications/gm80j2452

A new paper on crystal growth of high density Nb:YTaO4 single crystaql for X-ray scintillation has been published by SHIMAMURA, Kiyoshi et al.
Optical single crystals group

TitleHigh-density Nb:YTaO4 single crystals for X-ray scintillation

AuthorZhou, Yueshen; Yuan, Dongsheng; Villora, Encarnacion G.; Nakauchi, Daisuke; Kato, Takumi; Kawaguchi, Noriaki; Yanagida, Takayuki; Shimamura, Kiyoshi

Biblio. Info.CRYSTENGCOMM,　-1--9,　(2022)

URLhttps://pubs.rsc.org/en/content/articlelanding/2025/ce/d4ce00848k

A new paper on surface morphology of InAs(001), (111)A, and (111) investigated by scanning tunnneling microscopy has been published by OHTAKE, Akihiro et al.
Semiconductor Epitaxial Structures Group

TitleArsenic-flux dependence of surface morphology in InAs homoepitaxy

AuthorOhtake, Akihiro; Kawazu, Takuya; Mano, Takaaki

Biblio. Info.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,　42(6),　62702-1-62702-8,　(2022)

URLhttp://dx.doi.org/10.1116/6.0003957

A new paper on Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep-Ultraviolet Photodetector with Low-Voltage Operation has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleSynergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep-Ultraviolet Photodetector with Low-Voltage Operation

AuthorGu, Keyun; Wu, Kongping; Zhang, Zilong; Ohsawa, Takeo; Huang, Jian; Koide, Yasuo; Toda, Masaya; Liao, Meiyong

Biblio. Info.ADVANCED FUNCTIONAL MATERIALS (2022)

URLhttp://dx.doi.org/10.1002/adfm.202420238