DateMay 02 - 06, 2026

URLhttps://www.isplasma.jp/

DateJanuary 25 - 30, 2026

URLhttps://ceramics.org/event/50th-international-conference-and-expo-on-advanced-ceramics-and-composites-icacc2026/

A new brochure for the Research Center for Electronic and Optical Materials has been published.

A new paper on europium-doped oxynitride glass films were synthesized via sol-gel method and ammonolysis, and the optical properties were investigated. has been published by SEGAWA, Hiroyo, OHASHI, Naoki et al.
Amorphous Material Group
Electro-ceramics Group

TitleSynthesis and characterization of oxynitride glass films to develop a host for divalent-europium-centres

AuthorLiu, Xun; Ohsawa, Takeo; Xu, Jian; Yanagida, Masatoshi; Takahashi, Kohsei; Takeda, Takashi; Kishi, Tetsuo; Yano, Tetsuji; Segawa, Hiroyo; Ohashi, Naoki

Biblio. Info.Journal of Materials Chemistry C, -1–-12, (2025)

URLhttp://dx.doi.org/10.1039/d5tc01527h

A special column titled “NIMS’s Quantum Dot Research and Development for Realizing Innovative Quantum Light Sources,” 
written by MANO, Takaaki / Semiconductor Epitaxial Structures Group and KURODA, Takashi / Quantum Photonics Group, has been published in NIMS NOW.

A new paper on experimentally measured the stress tensor induced by dislocations in diamond crystals using quantum sensing based on NV centers has been published by TERAJI, Tokuyuki et al.
Semiconductor Defect Design Group

TitleEvaluation of stress tensor around a threading defect in diamond: Application of NV center-based measurement and comparative multi-modal analysis

AuthorTsuji, Takeyuki; Harada, Shunta; Teraji, Tokuyuki

Biblio. Info.JOURNAL OF APPLIED PHYSICS, 138(17), 174401-1-174401-8, (2025)

URLhttp://dx.doi.org/10.1063/5.0292833

A new paper on Understanding the mechanism of the carrier scattering in two-dimensional electron gas induced at AlGaN/GaN heterointerface fabricated by MOCVD has been published by SUMIYA, Masatomo et al.
Electro-ceramics Group

TitleEffect of strain-induced defects in GaN channel on two-dimensional carrier transport in AlGaN/GaN heterostructures

AuthorSumiya, Masatomo; Imanaka, Yasutaka; Nakano, Yoshitaka

Biblio. Info.APPLIED PHYSICS LETTERS, 127(10), 101602-1-101602-7, (2025)

URLhttp://dx.doi.org/10.1063/5.0283133

A new paper on high-mobility diamond field-effect transistor has been published by SASAMA, Yosuke et al.
Ultra-wide Bandgap Semiconductors Group

TitleEnhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor

AuthorSasama, Yosuke; Iwasaki, Takuya; Imura, Masataka; Watanabe, Kenji; Taniguchi, Takashi; Yamaguchi, Takahide

Biblio. Info.APPLIED PHYSICS LETTERS, 127(14), 143502-1-143502-6, (2025)

URLhttps://pubs.aip.org/aip/apl/article/127/14/143502/3366728/Enhanced-channel-mobility-of-hexagonal-boron

A new paper on blue light excitable Y₃Al₃MgSiO₁₂:Cr³⁺–Ni²⁺ phosphors, which were designed and fabricated and showed efficient short-wave infrared emission, ultrabroad emission band, and remarkably high thermal stability through Cr³⁺ to Ni²⁺ energy transfer, has been published by LI, Jiguang et al.
Polycrystalline Optical Material Group

TitleUltra-broadband shortwave infrared emission under blue light excitation of a Cr³⁺/Ni²⁺ co-doped Y₃Al₃MgSiO₁₂ garnet phosphor through effective energy transfer and its applications

AuthorZhang, Qian; Li, Xinyu; Wang, Ziying; Zhu, Qi; Wang, Xuejiao; Li, Jiguang

Biblio. Info.INORGANIC CHEMISTRY FRONTIERS, -1--16, (2025)

URLhttps://pubs.rsc.org/en/content/articlelanding/2025/qi/d5qi01841b

A new paper on a Yb_1.94Cr_0.06W₃O₁₂ phosphor showing high thermal stability and high optoelectronic conversion efficiency under blue light excitation, whose efficient NIR-I/II emission was proved to be effective for night vision and compositional analysis, has been published by LI, Jiguang et al.
Polycrystalline Optical Material Group

TitleAchieving high-performance far-red emission in Cr³⁺-activated garnet phosphors via Ca²⁺/Zr⁴⁺ doping toward plant lighting

AuthorMeng, Qinghong; Yuan, Jiaming; Li, Xiangming; Yu, Wanjun; Li, Ji-Guang

Biblio. Info.DALTON TRANSACTIONS, 54(43), 15980-15985, (2025)

URLhttps://pubs.rsc.org/en/content/articlelanding/2025/dt/d5dt01878a

A new paper on a Yb_1.94Cr_0.06W₃O₁₂ phosphor showing high thermal stability and high optoelectronic conversion efficiency under blue light excitation, whose efficient NIR-I/II emission was proved to be effective for night vision and compositional analysis, has been published by LI, Jiguang et al.
Polycrystalline Optical Material Group

TitleBlue Light Excitable Near-Infrared Luminescence Material Yb_2–2xCr_2xW₃O₁₂: Cr³⁺ → Yb³⁺ Energy Transfer, Mechanisms of Antithermal Quenching, and High-Performance pc-LED Applications

AuthorYang, Sihan; Gong, Changshuai; Wang, Ziying; Dong, Liang; Wang, Xuejiao; Li, Ji-Guang

Biblio. Info.ACS APPLIED MATERIALS & INTERFACES, 17(45), 62251-62260, (2025)

URLhttps://pubs.acs.org/doi/10.1021/acsami.5c11758

A new paper on the first experimental demonstration of single-microRNA detecion employing the metasurface fluorescence biosensors developed in NIMS has been published by IWANAGA, Masanobu et al.
Nanophotonics Group

TitleSingle-MicroRNA Detection on High-Selectivity Metasurface Fluorescence Biosensors

AuthorIwanaga, Masanobu

Biblio. Info.ACS NANO, 19(44), 38841-38848, (2025)

URLhttps://pubs.acs.org/doi/10.1021/acsnano.5c15853

Ogawa, Kenta, who is accepted by NAGATA, Takahiro / Nano Electronics Device Materials Group, received the Encouragement Award at the 62nd Autumn Meeting 2025 organized by JAPAN ELECTRONIC MATERIALS SOCIETY.

TitleRelationship between Interface Structure and Components of Tunnel Current in TixZn1-xO1+x/Si Junctions for Tunnel FETs

PresenterKenta Ogawa

Conference nameJEMS2025 Autumn Conference(Sponsored by JAPAN ELECTRONIC MATERIALS SOCIETY)

Date2025.11.18 - 19

URLhttps://jems1962.org/category/autumn-conference/

Ogawa, Kenta, who is accepted by NAGATA, Takahiro / Nano Electronics Device Materials Group, awarded for his poster presentation at IWDTF2025.

TitleEffects of Interface Formation Process on Tunneling Current Components of N-type Ti_0.3Zn_0.7O_1.3/P-type Si Stack Structure

RepresentativeKenta Ogawa

AuthorKenta Ogawa, Toyohiro Chikyow, Atsushi Ogura, Takahiro Nagata

Conference nameIWDTF2025(Sponsored by The Japan Society of Applied Physics)

Date2025.11.05 - 07

URLhttps://pub.confit.atlas.jp/en/event/iwdtf2025

Date2025.09.26

PlaceTsukuba International Congress Center

A new paper on comprehensively reviewing metasurfaces that have potential in practical applications, with particular emphasis on detailing metasurface fluorescence biosensors in depth, has been published by IWANAGA, Masanobu et al.
Nanophotonics Group

TitleMetasurface biosensors: Status and prospects

AuthorIwanaga, Masanobu; Hu, Qi; Tang, Youhong

Biblio. Info.Appl. Phys. Rev., 12(2), 21305-1–21305-24, (2025)

URLhttps://pubs.aip.org/aip/apr/article/12/2/021305/3342510/Metasurface-biosensors-Status-and-prospects

KOBAYASHI, Kiyoshi / Optical Ceramics Group's paper ranked third in the period download count rankings forElectrocemistry journal. (Period: July–August 2025)

TitleExtended Distribution of Relaxation TimeAnalysis for Electrochemical ImpedanceSpectroscopy

AuthorKiyoshi KOBAYASHI; Tohru S. SUZUKI

Biblio. Info.Electrochemistry, 90(1), 017004, (2022)

URLhttps://www.jstage.jst.go.jp/article/electrochemistry/90/1/90_21-00111/_article/-char/ja

A new paper on We previously reported that a dummy-SiO₂ process improved the dielectric/GaN interface properties; however, the improvement mechanism has remained unclear. This study reveal that disordered GaN(O) polarity in the interfacial layer in a sample prepared by the standard process was restored to some extent after the dummy-SiO₂ process, which likely led to the improved interface electrical properties has been published by IROKAWA, Yoshihiro et al.
Ultra-wide Bandgap Semiconductors Group

TitleObservation of Atomic-Scale Structural Changes in Al₂O₃/GaN Interfacial Layers Prepared with a Dummy-SiO₂ Process

AuthorUzuhashi, Jun; Irokawa, Yoshihiro; Nabatame, Toshihide; Ohkubo, Tadakatsu; Koide, Yasuo

Biblio. Info.ECS J. Solid State Sci. Technol., 14(8), 85001-1–85001-4, (2025)

URLhttps://iopscience.iop.org/article/10.1149/2162-8777/adf3e3

A new paper on Computational evaluation of electronic states and chemical bonding in semiconducting 3d transition metal silicides has been published by IMAI, Motoharu et al.
Electro-ceramics Group

TitleElectronic structure and chemical bonding in semiconducting 3d transition-metal silicides CrSi₂, Mn₄Si₇, and β-FeSi₂

AuthorImai, Motoharu; Arai, Masao

Biblio. Info.Jpn. J. Appl. Phys., 64(6), 61003-1–61003-6, (2025)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/ade487

A new paper on Experimental and computational investigations on physical properties of SrSi₂ has been published by IMAI, Motoharu et al.
Electro-ceramics Group

TitleStrontium disilicide SrSi₂: Narrow band gap semiconductor or Weyl semimetal?

AuthorImai, Motoharu; Udono, Haruhiko; Alinejad, Babak; Nakane, Takayuki; Takahashi, Hiroki; Arai, Masao

Biblio. Info.J. Alloy. Compd., 1032, 181074-1–181074-9, (2025)

URLhttps://www.sciencedirect.com/science/article/pii/S0925838825026350?via%3Dihub

TERAJI, Tokuyuki / Semiconductor Defect Design Group will be speaking at the invited lecture.

DateNovember 30 - December 5, 2025

URLhttps://www.mrs.org/meetings-events/annual-meetings/2025-mrs-fall-meeting

YAMANE, Ryo / Environmental Circulation Composite Material Group will be speaking at the invited lecture.

DateSeptember 28 - October 3, 2025

URLhttps://smartconf.jp/content/airapt29/

NAGATA, Takahiro / Nano Electronics Device Materials Group will be speaking at the invited lecture.

DateOctober 12 - 16, 2025

URLhttps://www.electrochem.org/248

OHASHI, Naoki / Electro-ceramics Group will be speaking at the invited lecture.

DateOctober 5–9, 2025

URLhttps://igpac2025.com/

A new paper on the interface control of n-oxide semiconductor/p-Si tunnel field-effect transistors for power-saving semiconductor devices has been published by NAGATA, Takahiro, CHIKYO, Toyohiro et al.
Nano Electronics Device Materials Group

TitleEffects of interface formation process on electronic properties of n-type Ti0.3Zn0.7O1.3/p-type Si stack structure

AuthorOgawa, Kenta; Chikyow, Toyohiro; Daimon, Yuki; Ogura, Atsushi; Nagata, Takahiro

Biblio. Info.Jpn. J. Appl. Phys., 64(5), 05SP25-1–05SP25-7, (2025)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/add0be

A new paper on A mixed solvent enables efficient nylon recycling, including PA11, with >98% recovery of polymers and fillers while preserving properties for sustainable reuse has been published by TAMURA, Kenji et al.
Environmental Circulation Composite Material Group

TitleRoom‐Temperature Material Recycling/Upcycling of Polyamide Waste Enabled by Cosolvent‐Tunable Dissolution Kinetics

AuthorTanks, Jonathon; Tamura, Kenji

Biblio. Info.Angew. Chem.-Int. Edit., -1–-11, (2025)

URLhttps://mdr.nims.go.jp/datasets/910dc912-2433-4644-8521-017f93cc054a

A new paper on A method for generally predicting chemical bonding at the metal–oxide interface including interface reaction and its implementation to a free software, InterChemBond has been published by YOSHITAKE, Michiko.
Nano Electronics Device Materials Group

TitleGeneral Prediction of Interface Chemical Bonding at Metal–Oxide Interface with the Interface Reaction Considered

AuthorYoshitake, Michiko

Biblio. Info.Materials, 18(13), 3096-1–3096-17, (2025)

URLhttps://www.mdpi.com/1996-1944/18/13/3096

A new paper on Air-gap structures were formed on (001) β-Ga₂O₃ using crystallographic anisotropic HCl gas etching has been published by OSHIMA, Takayoshi et al.
Ultra-wide Bandgap Semiconductors Group

TitleFabrication of air bridges on (100) β-Ga₂O₃ using crystallographic HCl gas etching

AuthorOshima, Takayoshi; Oshima, Yuichi

Biblio. Info.AIP Adv., 15(5), 55207-1–55207-7, (2025)

URLhttps://pubs.aip.org/aip/adv/article/15/5/055207/3345950/Fabrication-of-air-bridges-on-100-Ga2O3-using

A new paper on A step-and-terrace structure was achieved on the (001) β-Ga₂O₃ surface using an aqueous tetramethylammonium hydroxide solution has been published by OSHIMA, Takayoshi.
Ultra-wide Bandgap Semiconductors Group

TitleStep-and-terrace surface formation on (001) β-Ga₂O₃ by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer

AuthorOshima, Takayoshi

Biblio. Info.Jpn. J. Appl. Phys., 64(8), 88001-1–88001-5, (2025)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/adf380

A new paper on Normally-off boron-doped diamond MOSFETs are fabricated on a 150 nm-thick epitaxial layer with breakdown voltage over 1.7 kV has been published by LIU, Jiangwei et al.
Semiconductor Defect Design Group

TitleNormally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV

AuthorLiu, J.; Teraji, T.; Da, B.; Koide, Y.

Biblio. Info.Appl. Phys. Lett., 127(4), 42601-1–42601-4, (2025)

URLhttps://pubs.aip.org/aip/apl/article/127/4/042601/3356215/Normally-off-boron-doped-diamond-MOSFETs-with-a

A new paper on polarity-controlled GaAs/Ge/GaAs heterostructures on the {111}-oriented substrates has been published by OHTAKE, Akihiro,HAYASHI, Yusuke et al.
Semiconductor Epitaxial Structures Group group

TitleControlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures

AuthorOhtake, Akihiro; Hayashi, Yusuke

Biblio. Info.Appl. Phys. Lett., 126(20), 201601-1–201601-6, (2025)

URLhttps://pubs.aip.org/aip/apl/article/126/20/201601/3347176/Controlled-polarity-inversion-in-GaAs-Ge-GaAs-111

A new paper on the effect of ligands in perovskite structures: a collaborative study with Bandung Institute of Technology has been published by YAMASHITA, Yoshiyuki et al.
Nano Electronics Device Materials Group

TitleThe effect of surface ligands on the surface chemical states and photoluminescence characteristics in cesium lead bromide perovskite nanocrystals

AuthorAsharuddin, Muhammad; Hidayat, Rahmat; Nurunnizar, Adhita Asma; Nursam, Natalita Maulani; Yandri, Valdi Rizki; Arsyad, Waode Sukmawati; Suwardy, Joko; Indari, Efi Dwi; Yamashita, Yoshiyuki

Biblio. Info.RSC Adv., 15(37), 30727–30741, (2025)

URLhttps://pubs.rsc.org/en/content/articlelanding/2025/ra/d5ra05099e

A new paper on Surface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleSurface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator

AuthorGu, Keyun; Zhang, Zilong; Huang, Jian; Koide, Yasuo; Koizumi, Satoshi; Liao, Meiyong

Biblio. Info.Appl. Phys. Lett., 126(22), 221901-1–221901-6, (2025)

URLhttps://pubs.aip.org/aip/apl/article/126/22/221901/3348240/Surface-desorption-properties-of-hydrogen

A new paper on Ultra-High Sensitivity, Wide-Range Thermometry Based on High-Quality Microscale Diamond Resonators has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleUltra-High Sensitivity, Wide-Range Thermometry Based on High-Quality Microscale Diamond Resonators

AuthorZhao, Wen; Chen, Guo; Teraji, Tokuyuki; Koide, Yasuo; Toda, Masaya; Liao, Meiyong

Biblio. Info.Adv. Mater., -1–-10, (2025)

URLhttps://advanced.onlinelibrary.wiley.com/doi/10.1002/adma.202502012

A new paper on Reduction in dislocation density in α-gallium oxide by epitaxial lateral over growth using a stripe mask with ultra-narrow windows has been published by OSHIMA, Yuichi et al.
Ultra-wide Bandgap Semiconductors Group

TitleEpitaxial lateral overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows

AuthorOshima, Yuichi; Shinohe, Takashi

Biblio. Info.Appl. Phys. Lett., 126(20), 202104-1–202104-5, (2025)

URLhttps://pubs.aip.org/aip/apl/article/126/20/202104/3347404/Epitaxial-lateral-overgrowth-of-c-plane-Ga2O3

A new paper on Effect of controlled surface arsenic stoichiometry of GaAs surfaces on the luminescence properties of embedded nanostructures after oxidation has been published by MANO, Takaaki , OHTAKE, Akihiro et al.
Semiconductor Epitaxial Structures Group

TitleEffects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation

AuthorMa, Zhao; Mano, Takaaki; Ohtake, Akihiro; Kuroda, Takashi

Biblio. Info.J. Appl. Phys., 137(24), 243102-1–243102-7, (2025)

URLhttps://pubs.aip.org/aip/jap/article/137/24/243102/3350691/Effects-of-arsenic-oxides-on-GaAs-surfaces-on

Masuyama, Yudai, who is accepted by TERAJI, Tokuyuki / Semiconductor Defect Design Group, has received the Outstanding Presentation Award at The 38th Diamond Symposium.

TitleSpatial Distribution of Quantum Properties and Evaluation of Sensitivity in Quantum Sensors Using Diamond Bulk Crystals

RepresentativeMasuyama Yudai

AwardeeMasuyama, Yudai; SHINEI, Chikara; ISHII, Shuya, ABE, Hiroshi; TANIGUCHI, Takashi; OHSHIMA, Takeshi; TERAJI, Tokuyuki

Conference nameThe 38th Diamond Symposium

Date2024.11.20 - 22

URLhttps://jndf.org/katsudo/symposium/sympo-award.html

Chikara, Shinei, who is accepted by TERAJI, Tokuyuki / Semiconductor Defect Design Group, received the YSA-Poster Gold Award at NDNC2025.

TitleVacancy mediated nitrogen mobile in diamond crystal by high-fluence electron beam irradiation

RepresentativeChikara Shinei

AwardeeChikara Shinei, Yuta Masuyama, Hiroshi Abe, Masashi Miyakawa, Takashi Taniguchi, Takeshi Ohshima, Tokuyuki Teraji

Conference name18th International Conference on New Diamond and Nano Carbons

Date2025.05.11 - 15

URLhttps://ndnc2025.org/ysa.html

A new paper on an effective post-treatment method of Nitrosyl fluoride gas treatment of GaN for improving electronic properties has been published by NAGATA, Takahiro et al.
Nano Electronics Device Materials Group

TitleEffects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface

AuthorNagata, Takahiro; Matsuda, Asahiko; Teramoto, Takashi; Gerlach, Dominic; Shen, Peng; Ueda, Shigenori; Kimura, Takako; Dussarrat, Christian; Chikyow, Toyohiro

Biblio. Info.JOURNAL OF APPLIED PHYSICS, 137(9), 95304-1-95304-, (2025)

URLhttps://pubs.aip.org/aip/jap/article/137/9/095304/3338311/Effects-of-nitrosyl-fluoride-based-gas-treatment

A new paper on a novel approach for fabricating highly oriented, textured MgB2, discussing how its anisotropic properties affect critical current density, irreversibility field, and pinning characteristics, has been published by SUZUKI, Tohru,VASYLKIV, Oleg et al.
Polycrystalline Optical Material Group

TitleTowards high degree of c-axis orientation in MgB2

AuthorM. A. Grigoroscuta, G. Aldica, M. Burdusel, V. Sandu, A. Kuncser, I. Pasuk, A. Ionescu, T.S. Suzuki, O. Vasylkiv, P. Badica

Biblio. Info.Journal of Magnesium and Alloys, 10[8]Aug, 2173-2184, (2022)

URLhttps://doi.org/10.1016/j.jma.2021.10.013

A new paper on the preparation and analysis of heterogeneous at nano- and microscale high-entropy Ti, Ta, Hf, Zr multiphase diboride with resistance to deformation at temperatures up to 2000℃ has been published by VASYLKIV, Oleg et al.
Polycrystalline Optical Material Group

TitleHigh-Entropy Ti, Zr, Hf, Ta Multiphase Diboride with Deformation Resistance up to 2000℃

AuthorBadica, Petre; Grigoroscuta, Mihai Alexandru; Kuncser, Andrei Cristian; Vasylkiv, Oleg

Biblio. Info.ADVANCED ENGINEERING MATERIALS, -1--, (2025)

URLhttps://advanced.onlinelibrary.wiley.com/doi/10.1002/adem.202402723

A new paper on Plasma-free HCl gas etching on (011) β-Ga₂O₃ enables near-vertical processing with minimal damage, showing high potential for microfabrication has been published by OSHIMA, Takayoshi,OSHIMA, Yuichi et al.
Ultra-wide Bandgap Semiconductors Group

TitleNear-vertical plasma-free HCl gas etching on (011) β-Ga₂O₃

AuthorOshima, Takayoshi; Oshima, Yuichi

Biblio. Info.JAPANESE JOURNAL OF APPLIED PHYSICS,　64(1),　18003-1-18003-, (2022)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/ada706

A new paper on A perspective on diamond MEMS magnetic sensors has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleA perspective on diamond MEMS magnetic sensors

AuthorZhang, Zilong; Gu, Keyun; Toda, Masaya; Liao, Meiyong

Biblio. Info.APPLIED PHYSICS LETTERS, 126(10),　100501-1-100501-,　(2022)

URLhttp://dx.doi.org/10.1063/5.0255014

A new paper on Photo-response performance regulation of a type-Ib diamond-based photodetector by H2 annealing and ozone treatment has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitlePhoto-response performance regulation of a type-Ib diamond-based photodetector by H2 annealing and ozone treatment

AuthorGu, Keyun; Zhang, Zilong; Ohsawa, Takeo; Imura, Masataka; Huang, Jian; Koide, Yasuo; Liao, Meiyong

Biblio. Info.JOURNAL OF MATERIALS CHEMISTRY C, 13(13),　6816-6822,　(2022)

URLhttp://dx.doi.org/10.1039/d4tc05169f

A new paper on Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleEffect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface

AuthorWu, Kongping; Cheng, Renxiang; Zhang, Leng; Wang, Wenxiu; Li, Fangzhen; Liao, Meiyong

Biblio. Info.SURFACES AND INTERFACES,　56,　105666-1-105666-,　(2022)

URLhttp://dx.doi.org/10.1016/j.surfin.2024.105666

A new paper on orange-yellow-emitting ‘Sr-rich’ α-SiAlON phosphor with 93% PL intensity at 150 ºC that can be synthesized in single phase powder form for white LEDs has been published by ESTILI, Mehdi, SUZUKI, Tohru et al.
Optical Ceramics Group

TitleRobust and orange-yellow-emitting Sr-rich polytypoid α-SiAlON (Sr3Si24Al6N40:Eu2+) phosphor for white LEDs

AuthorEstili, Mehdi; Xie, Rong-Jun; Takahashi, Kohsei; Funahashi, Shiro; Suzuki, Tohru S.; Hirosaki, Naoto

Biblio. Info.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,　25(1),　2396276-1-2396276-19,　(2022)

URLhttp://dx.doi.org/10.1080/14686996.2024.2396276

A new paper on disorder of crystal structure in metal cluster halides studied by x-ray diffraction and first principle calculation methods has been published by OHASHI, Naoki et al.
Electro-ceramics Group

TitleUnraveling the Origin of Unusual Cs Atom Disorder in Cesium Octahedral Molybdenum Halide Cluster Compounds, Cs2[{Mo6Xi 8}Xa 6] (X = Cl and Br)

AuthorSaito, Norio; Cordier, Stephane; Ohsawa, Takeo; Saito, Noriko; Takei, Takahiro; Grasset, Fabien; Cross, Jeffrey Scott; Ohashi, Naoki

Biblio. Info.INORGANIC CHEMISTRY,　-1-10,　(2022)

URLhttp://dx.doi.org/10.1021/acs.inorgchem.4c04648

A new paper on A sieries of new phosphors showing high quantum efficiency and thermal stability for NIR luminescence under blue light excitation were obtained has been published by LI, Jiguang et al.
Polycrystalline Optical Material Group

TitleCa2+/Si4+ Modification of the (Gd,Lu)AG Garnet for Enhanced Broadband Cr3+ Luminescence of High Thermal Stability

AuthorWang, Yun; Pan, Zhiyuan; Feng, Sihan; Gao, Lijie; Wang, Xuejiao; Zhu, Qi; Li, Ji-Guang

Biblio. Info.INORGANIC CHEMISTRY,　63(52),　24971-24983,　(2022)

URLhttp://dx.doi.org/10.1021/acs.inorgchem.4c04702

Crystallographic gas etching was performed on gallium oxide power semiconductors using a safe and non-toxic forming gas has been published by OSHIMA, Takayoshi et al.
Ultra-wide Bandgap Semiconductors Group

TitlePlasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure

AuthorOshima, Takayoshi; Togashi, Rie; Oshima, Yuichi

Biblio. Info.SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS,　25(1),　2378683-1-2378683-8,　(2022)

URL 1http://dx.doi.org/10.1080/14686996.2024.2378683

URL 2https://mdr.nims.g o.jp/concern/publications/gm80j2452

ORIMOTO, Naoya, who is accepted by MORITA, Koji / Polycrystalline Optical Material Group, received the Outstanding Presentation Award at the Autumn Meeting of the Japan Society of Powder and Powder Metallurgy, 2024.

TitleEvaluation of Cation Diffusion Behavior in Zirconia under Strong Electric Fields

RepresentativeORIMOTO, Naoya(TUS、NIMS)

AwardeeORIMOTO, Naoya; SOGA, Kohei(TUS); MORITA, Koji;

Conference nameAutumn Meeting of the Japan Society of Powder and Powder Metallurgy, 2024

Date2024.11.19 - 21

URLhttps://www.jspm.or.jp/application/files/2217/3623/8168/2024aPresentationAward.pdf

A new paper on crystal growth of high density Nb:YTaO4 single crystaql for X-ray scintillation has been published by SHIMAMURA, Kiyoshi et al.
Optical single crystals group

TitleHigh-density Nb:YTaO4 single crystals for X-ray scintillation

AuthorZhou, Yueshen; Yuan, Dongsheng; Villora, Encarnacion G.; Nakauchi, Daisuke; Kato, Takumi; Kawaguchi, Noriaki; Yanagida, Takayuki; Shimamura, Kiyoshi

Biblio. Info.CRYSTENGCOMM,　-1--9,　(2022)

URLhttps://pubs.rsc.org/en/content/articlelanding/2025/ce/d4ce00848k

A new paper on surface morphology of InAs(001), (111)A, and (111) investigated by scanning tunnneling microscopy has been published by OHTAKE, Akihiro et al.
Semiconductor Epitaxial Structures Group

TitleArsenic-flux dependence of surface morphology in InAs homoepitaxy

AuthorOhtake, Akihiro; Kawazu, Takuya; Mano, Takaaki

Biblio. Info.JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A,　42(6),　62702-1-62702-8,　(2022)

URLhttp://dx.doi.org/10.1116/6.0003957

A new paper on Synergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep-Ultraviolet Photodetector with Low-Voltage Operation has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleSynergistic Effect of Surface States and Deep Defects for Ultrahigh Gain Deep-Ultraviolet Photodetector with Low-Voltage Operation

AuthorGu, Keyun; Wu, Kongping; Zhang, Zilong; Ohsawa, Takeo; Huang, Jian; Koide, Yasuo; Toda, Masaya; Liao, Meiyong

Biblio. Info.ADVANCED FUNCTIONAL MATERIALS (2022)

URLhttp://dx.doi.org/10.1002/adfm.202420238