substances and materials | Research Center for Electronic and Optical Materials

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Research and development at this center
substances and materials

At this center, we are conducting research and development on a wide variety of substances in order to acquire the desired material technology.
First, semiconductors are a typical functional material. Semiconductors are also used as switches that control current by utilizing their electron transport properties, and as chemical sensors that identify substances. Semiconductors are also used for light emitting and light receiving, that is, in devices that emit various types of light, such as lighting and displays, as well as in light sensors and solar cells.Materials that emit light include fluorescent materials, which are materials with a light-emitting structure built into them, and optical materials, such as lenses. In addition, there is a method of imparting fine structure to materials to achieve optical and electronic functions. A typical example is nanostructures such as metamaterials, which can be called nanosized antennas.Additionally, the materials needed for electronics include insulating materials such as capacitors, packaging materials, and piezoelectric materials. Additionally, some substances perform chemical functions such as trapping molecules or transporting ions.
At this center, material development is progressing from a variety of perspectives, from the search for new substances that exhibit unprecedented high functionality to technologies for applying superior materials as devices.

We would like to introduce the research and development of semiconductors at this center, especially semiconductors focusing on electron transport.

Power electronics semiconductor

We are developing wide band gap semiconductors for high voltage power control.

Crystal growth and device fabrication of
wide bandgap oxides such as gallium oxide

Group in charge
Ultra-wide Bandgap Semiconductors Group

OSHIMA, YuichiOSHIMA, Takayoshi

Gallium oxide growth. Diagram shows the system setup and a graph of growth rate in micrometers per hour. Bottom: 150 micrometer thick crystal and 5 micrometer hexagonal pillars. Non-plasma fabrication. Left SEM: selective growth and etching of fins and trenches. Right: a fin-type transistor at a 50 micrometer scale showing terminals.

Power electronics application of semiconductor diamond

Group in charge
Ultra-wide Bandgap Semiconductors Group

KOIZUMI, Satoshi

Diamond thin-film growth and devices. Center: growth equipment. Examples include a blue-white pn junction, sensors, FETs, and Ga2O3 heterodevices.

Semiconductor for chemical sensors

We are developing sensor semiconductors that utilize the chemical activity of semiconductor surfaces.

Thin film sensor materials such as zinc oxide

Group in charge
Electro-ceramics Group

ADACHI, YutalaSAITO, Noriko

Zinc oxide particles and gas sensing. Left: microscope image of pyramidal particles. Right: graph of resistivity in ohms. 0.5 percent gold-loaded sample shows higher sensitivity to isoprene gas.

Sensor applications of nitride semiconductors

Group in charge
Ultra-wide Bandgap Semiconductors Group

IROKAWA, Yoshihiro

Silicon dioxide and palladium interface. Top: atomic model. Bottom: graph of energy in electron volts versus position in angstroms. It shows energy level changes with and without hydrogen.

Semiconductor junction/interface function

We are developing materials and forming bonds to improve the functionality of electronic devices such as transistors.

We are developing devices that utilize interface functions, such as variable resistance devices and memristors.

Group in charge
Electro-ceramics Group

OHSAWA, Takeo

Interface electron transport. Left: current-voltage graph for Au/Nb:SrTiO3 at 300 and 78 K. Top right: Hard X-ray irradiation on a 10 nm gold layer. Bottom right: Ti 2p spectroscopy from 80-300 K.

Research on gate insulating films for the development of diamond and nitride devices

Group in charge
Semiconductor Defect Design Group

LIU, Jiangwei

Diamond semiconductor flow. Top: crystal lattice. Middle: MOSFET logic circuits. Bottom: digital boards and power systems. Power loss is cut from 100 percent in silicon to 4.7 percent in diamond.

Exploration of new materials

The appearance of new materials can change the industrial structure. We are currently searching for semiconductors with properties such as high mobility.

Functional exploration of non-diamond structure nitrides

Group in charge
Amorphous Material Group

OGAKI, Takeshi

Group in charge
Electro-ceramics Group

SUEHIRO, Takayuki

Scandium nitride. Left: Abundance table and mobility graph vs Si/GaAs. Top right: Molecular beam epitaxy system. Bottom right: ScN growth model on sapphire at 0.45 nm intervals.

We would like to introduce the research and development of semiconductors at this center, with a particular focus on semiconductor applications related to light.

III-V semiconductors

We are working on compound semiconductor materials and their nanostructure control with the aim of developing highly efficient light emission and highly sensitive optical sensors.

We are developing III-V semiconductors including quantum dots

Group in charge
Semiconductor Epitaxial Structures Group

MANO, Takaaki OHTAKE, Akihiro KAWAZU, Takuya

Quantum dots via droplet epitaxy. Left: growth apparatus and entangled photon source concept. Right: 200nm AFM images and PL spectra of GaAs and InAs dots (600-1600nm).

Nitride semiconductors

We are working on developing III-V nitride semiconductors, from aluminum nitride to indium nitride, with the aim of increasing their functionality.

We are developing nitride semiconductors including gallium nitride (GaN)

Group in charge
Electro-ceramics Group

SUMIYA, Masatomo

Group in charge
Semiconductor Epitaxial Structures Group

IMURA, Masataka

Nitride semiconductor research. Center: GaN HEMT cross section. Around it: growth system photo and three evaluation graphs of device, material, and interface.

Non-traditional semiconductors

We are currently exploring new semiconductors that are not classified as III-V or II-VI, especially direct transition type semiconductors.

Organic-inorganic hybrid crystals

Group in charge
Electro-ceramics Group

OHASHI, Naoki SAITO, Noriko

Hybrid crystal simulations. Three panels show carbon and nitrogen networks. Bottom right: electron density with red and yellow contours around atoms.

New semiconductors such as silicide

Group in charge
Electro-ceramics Group

OHASHI, NaokiIMAI, Motoharu

Crystal structure of Ca3SiO. A detailed 3D lattice with depth shows red (Oxygen), green (Calcium), and blue (Silicon) spheres forming a precise grid.

We would like to introduce the research and development of phosphors and optical materials at this center.

Phosphors for lighting and displays

We are conducting research and development aimed at reducing the power consumption of lighting, improving display quality, and improving the functionality of phosphors in the infrared region.

We are developing high-performance phosphors such as nitrides and oxynitrides.

Group in charge
Advanced Phosphor Group

TAKEDA, Takashi

Flowchart of a phosphor development cycle. It starts with synthesis, followed by selecting particles at a fifty micrometer scale, and concludes with crystal structure analysis. It shows a smart lab system for automated and accelerated discovery.

We are developing new phosphor materials such as new composite compounds.

Group in charge
Advanced Phosphor Group

NAKANISHI, Hiroyuki

High-brightness phosphors. Left: europium core with ligands. Right: four modular types (cluster, polymer, inorganic, ladder) with 340 Celsius stability and 80 percent efficiency.

Single crystals that emits high-brightness and high-power light

Group in charge
Optical Single Crystals Group

SHIMAMURA, KiyoshiVILLORA, Garcia

A vibrant yellow single crystal with high purity. It has a conical bulk shape with visible growth steps. Its transparency shows a high quality material with few flaws for high power laser applications.

Polycrystalline bulk laser material

We are developing ceramic laser materials for high-power lasers such as industrial lasers.

We are developing ceramic laser materials using advanced sintering technology.

Group in charge
Optical Ceramics Group

SUZUKI, TohruFURUSE, Hiroaki

Scintillator materials

We are developing scintillator materials for radiation detection, which are important in security and medical fields.

We are developing single crystal growth technology and exploring new materials.

Group in charge
Optical Single Crystals Group

SHIMAMURA, Kiyoshi

Scintillator crystals. Top: Ce:LYBO crystal showing a 600% light yield increase after annealing. Bottom: Stable Tl:CCl with superior moisture resistance and <3% non-proportionality.

Transparent polycrystalline optical material

We are developing transparent and translucent ceramics with various optical properties such as infrared transparency.

Group in charge
Polycrystalline Optical Material Group

MORITA, Koji

Transparent ceramics research. Top: spark plasma sintering and transparent spinel samples. Bottom: comparison of exceptional clarity under ambient light with vivid red luminescence under excitation. It shows precise interface bonding on a nanometer scale.

Electro-optic/magneto-optic materials

We are developing electro-optical and magneto-optical materials used for wavelength conversion and polarization control.

We are developing magneto-optical materials (isolator materials) for short wavelengths using transparent magnetic materials.

Group in charge
Optical Single Crystals Group

SHIMAMURA, KiyoshiVILLORA, Garcia

Cerium fluoride for UV isolators. Left graph: transmittance and Verdet constant surpass TGG below 300 nm. Right: small cylindrical components (~1 cm) shown with a pencil tip for scale.

We are developing optical element materials that apply ferroelectric materials

Group in charge
Quantum Photonics Group

KURIMURA, Sunao

Quantum light generation. Left: experiment using a GaN laser for correlated photon pairs. Right: 3.2 micrometer pitch periodic stripes on a green background for optical conversion.

Structural color materials

We are developing color-forming materials with controlled photonic band structures

Group in charge
Nanophotonics Group

FUDOUZI, Hiroshi

Photonic elastomers. A: rainbow film and peak shifts (450-700 nm). B: orange to green shift when stretched. C: strain-sensing via structural color.

We are conducting research toward the development of devices that apply metamaterials

Group in charge
Semiconductor Epitaxial Structures Group

MIYAZAKI, Hideki

Group in charge
Nanophotonics Group

IWANAGA, Masanobu

Metamaterial sensor. Top: gold and quantum well structure for photocurrent. Bottom: E-field resonance, 1 micrometer SEM image, and a 5 mm packaged practical device.

We would like to introduce the research and development of nanostructures and composite materials at this center.

Nanophotonics

We are developing photonic devices adopting microfabrication and nanomaterial synthesis.

Development of highly sensitive sensors using metamaterials

Group in charge
Semiconductor Epitaxial Structures Group

MIYAZAKI, Hideki

Group in charge
Nanophotonics Group

IWANAGA, Masanobu

Metasurface for medical detection. Left: 10 mm substrate and 500 nm silicon pellets. Center: targeting cell-free DNA (cfDNA). Right: fluorescence detection on purple pillars.

Development of quantum dots and quantum structures by epitaxy

Group in charge
Semiconductor Epitaxial Structures Group

MANO, TakaakiOHTAKE, AkihiroKAWAZU, Takuya

Atomic force microscopy image of self-formed quantum dots. Bright dots are densely distributed on a dark background, showing uniform growth.

Nano-powders

We are proceeding with the development of nanopowder as a raw material for making ceramics and to obtain the advantage of high specific surface area.

Synthesis of nanopowder raw materials for producing transparent optical ceramics

Group in charge
Polycrystalline Optical Material Group

LI, Jiguang

Nano powder luminescence. 4 panels show color control: Eu red, Tb green, Ce yellow, Dy white. Each has a 500 nanometer SEM image, photo, and CIE color diagram.

Synthesis of nanopowder for highly functional chemical sensors

Group in charge
Electroceramics Group

SAITO, Noriko

Zinc oxide particles and gas sensing. Left: microscope image of pyramidal particles. Right: graph of resistivity in ohms versus time. A zero point five percent gold loaded sample shows higher sensitivity to isoprene gas than the non loaded.

Nanocomposite

We are developing nanocomposites with the aim of creating high-strength substrates and materials with controlled heat conduction.

Development of non-oxide heat-resistant high-strength ceramics

Group in charge
Polycrystalline Optical Material Group

VASYLKIV, Oleg

Ultra-high temperature ceramics. Graphs A-B: ductility and plastic deformation from 1600 to 2000°C. C: complex component, proving advanced processing at extreme heat.

Development of composite ceramics with dispersed nanotubes

Group in charge
Optical Ceramics Group

ESTILI, Mehdi

CNT-MXene hybrid membranes. Top SEM: 2D to 3D evolution with 40% CNT. Bottom: crystal and voltage graphs, flowchart, and Li-ion transport schematics.

We would like to introduce the research and development of dielectrics and piezoelectrics at this center.

Search for new ferroelectric and piezoelectric materials

We are developing dielectrics and piezoelectrics for various applications such as electronics, sensors, and actuators.

Search for dielectrics and piezoelectrics other than perovskite-derived structures

Group in charge
Electro-ceramics Group

SHIMIZU, Takao

Group in charge
Nanophotonics Group

IWANAGA, Masanobu

Ferroelectric thin films. Left: yttrium-doped hafnium oxide with a hysteresis loop. Right: 10 nanometer (Al,Sc)N showing polarization switching at plus and minus 6 volts.

Dielectric material exploration using data science

Group in charge
Nano Electronics Device Materials Group

NAGATA, Takahiro

Combinatorial development. Left: heat map of surface electron states in In2O3 to Ga2O3 series. Right: C-V graph from 10 kHz to 1 MHz for a graded CeF3/Ge capacitor.

Development of MEMS devices

We are developing materials for the further development of MEMS, such as frequency filters and magnetic sensors.

Development of a high-sensitivity sensor using MEMS that takes advantage of the hardness of diamond

Group in charge
Ultra-wide Bandgap Semiconductors Group

LIAO, Meiyong

Diamond devices. Left: plasma growth and 2D Raman mapping for quality assessment. Right: MEMS cantilever shifts at 500 °C and an SEM image of sharp diamond tips.

Search for low dielectric constant glass and high heat resistant glass

We are investigating amorphous materials without grain boundaries not only as optical materials but also as insulators and dielectrics.

Development of heat-resistant, high-hardness glass for high-power circuits and devices

Group in charge
Amorphous Material Group

SEGAWA, Hiroyo

Glass transition temperature vs Young's modulus. Red star shows silicon oxynitride with high heat resistance (~1600 K) and stiffness (~160 GPa), far surpassing silicates.

We would like to introduce the research and development of chemically functional materials such as ionic conductors and adsorption materials at this center.

Hydrogen ion conductors

We are developing hydrogen ion conductors for energy applications such as fuel cells.

We are developing polymer electrolyte materials that are environmentally friendly

Group in charge
Environmental Circulation Composite Materials Group

KIM, JedeokTAMURA, Kenji

Eco-friendly polymer cycle. Top: non-fluorinated design. Bottom left: nanoparticle ion paths. Bottom right: green hydrogen devices. Arrows show a research cycle.

Environmental Circulation materials

We are developing materials with low environmental impact that utilize biopolymers and natural resources.

Utilization of biopolymers and biomass

Group in charge
Environmental Circulation Composite Materials Group

TAMURA, Kenji

Plastic reinforcement with lignin. Middle: SEM shows lignin strengthening carbon fiber bonds. Bottom: 3D bar graphs plot tensile modulus and strength versus weight percent.

Capture and recovery of elements using clay minerals, etc

Group in charge
Environmental Circulation Composite Materials Group

TAMURA, KenjiSAKUMA, HiroshiSUEHARA, Shigeru

Using waste. Top: Carbonation from exhaust/cement ions (Ca2+/Mg2+) creates reinforcements. Bottom: Layered crystal adsorbents trap caffeine between clay sheets.

Process development for ceramics reuse

Group in charge
Amorphous Material Group

SEGAWA, Hiroyo

Group in charge
Electro-ceramics Group

OHASHI, Naoki

Ceramic properties. Top: SEM of porous (100 nm) and dendritic (500 nm) structures. Left: I-V curves (Nb 0.5 to 0.01 wt%). Right: interface barrier model.

Semiconductor for chemical sensors

We are developing sensor materials that utilize the chemical activity of semiconductor surfaces.

Thin film sensor materials such as zinc oxide

Group in charge
Electro-ceramics Group

ADACHI, YutalaSAITO, Noriko

ZnO gas sensors. Top: current control via gas adsorption and response to hydrogen at 350°C. Response rises as thickness drops (100 to 20 nm). Bottom: crystal models and CAISSIS spectra.

We would like to introduce the research and development conducted at our center regarding the exploration of the substances and functions of amorphous materials.

oxynitride glass

We are developing mixed anionic glass materials containing oxygen and nitrogen to improve the heat resistance, chemical durability, and optical properties of glass.

Development of nitrogen-containing glass materials such as silicon oxynitride

Group in charge
Amorphous Material Group

SEGAWA, Hiroyo

Amorphous density control. Top: size scale. Center: 3 atomic models with pores tuned (0.79 to 0.31 nm). Right: how sub-nano tech enables Society 5.0.
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