Quantum Materials Simulation Group
Semiconductor Materials Field
First-principles simulations of complex nano-systems
Group Leader:Tsuyoshi Miyazaki
DFT study of unique electronic properties and functions at complex interfaces
Current Topics
Many interesting phenomena happen at surfaces and interfaces. Atomic and electronic structures at these regions are very different from bulk regions, though the detailed information from experiments is often limited. Using the state-of-the-art electronic structure calculation methods, we clarified the variety of electronic structures at the polarity inversion domain boundary in GaN with Mg dopants [ 1 ] and the peculiar chemical reactivities at the surface of IrO2.[ 2 ]
Fig.
(Upper) Free energy diagram for nitrogen reduction reaction (NRR) on IrO2 (110) surface with RISM solvation model. The pathways under water (pH = 7) and acid (pH = 0) solvation are depicted in blue and red lines, respectively. (Lower) Side and top views of the atomic structures in the NRR process.


References
Group members
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Tsuyoshi Miyazaki
- Group Leader
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Jun Nara
- Principal Researcher
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Ayako Nakata
- Principal Researcher
Links
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Semiconductor Materials Field - Nanostructured Semiconducting Materials Group
- Quantum Materials Simulation Group
- Semiconductor Functional Device Group
- Thin Film Electronics Group
- Neuromorphic Devices Group
- Semiconductor Nano-integration Group
- 2D Semiconductor Group
- Photonics Nano-Engineering Group
- Ionic Devices Group
- Semiconductor Device Group
- Smart Interface Team
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Quantum Materials Field -

Nanomaterials Field - Thermal Energy Materials Group
- Soft Chemistry Group
- Functional Nanomaterials Group
- Layered Nanochemistry Group
- Frontier Molecules Group
- Functional Chromophores Group
- Supermolecules Group
- Nanoparticle Group
- High-Pressure Structural Controls Group
- ElectroActive Materials Team
- Optical Nanostructure Team
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Independent Researcher
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