Takuya Iwasaki
Independent Researcher
We are exploring new physics and device functionalities in two-dimensional materials and their stacking structures.
Development of nanostructure quantum devices based on two-dimensional materials and moiré superlattices
Current Topics
We study quantum transport properties in hexagonal boron nitride (hBN)/bilayer graphene (BLG) moiré superlattices in which their crystal axes are precisely aligned at a certain angle. Due to the moiré effect, the hBN/BLG moiré superlattices exhibit an energy gap at the charge neutrality point (CNP) even in the absence of a perpendicular electric field [ 1 ]. The hBN/BLG moiré superlattice is associated with non-trivial energy-band topology and a narrow energy band featuring a van Hove singularity. By employing a dual-gated device structure where both the perpendicular displacement field and the carrier density are individually controllable (Fig.1), systematic engineering of the energy-band structure can be achieved. Our data demonstrate the universality and diversity in the physics of hBN/BLG moiré superlattices [ 2 ].
References
Group members
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Takuya Iwasaki
- Independent Researcher
- Qubit Materials Group
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Semiconductor Materials Field - Nanostructured Semiconducting Materials Group
- Quantum Materials Simulation Group
- Semiconductor Functional Device Group
- Thin Film Electronics Group
- Neuromorphic Devices Group
- Semiconductor Nano-integration Group
- 2D Semiconductor Group
- Photonics Nano-Engineering Group
- Ionic Devices Group
- Semiconductor Device Group
- Smart Interface Team
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Quantum Materials Field -

Nanomaterials Field - Thermal Energy Materials Group
- Soft Chemistry Group
- Functional Nanomaterials Group
- Layered Nanochemistry Group
- Frontier Molecules Group
- Functional Chromophores Group
- Supermolecules Group
- Nanoparticle Group
- High-Pressure Structural Controls Group
- ElectroActive Materials Team
- Optical Nanostructure Team
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Independent Researcher
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