Program:
| Location | August 2nd (Wed) | August 3rd (Thr) | August 4th (Fri) |
| Convention Hall Lobby | Registration 8:15AM |
Registration 8:30AM |
Registration 8:30AM |
Convention Hall 200 |
8:50AM: Welcome | ||
| Session A HAMR I (Media) 9:00AM - 12:20PM |
Session C MRAM I 8:50AM - 12:10PM |
Session E MAMR and Related 8:50AM - 12:10PM |
|
| Coffee Break 10:30AM - 10:50AM | Coffee Break 10:20AM - 10:40AM | Coffee Break 10:20AM - 10:40AM | |
| Multi-purpose Hall | Lunch 12:20PM - 1:20PM |
Lunch 12:10PM - 1:10PM |
Lunch 12:10PM - 1:10PM |
Convention Hall 200 |
Session B Advanced Recording Components and Systems 1:20PM - 5:10PM |
Session D HAMR II (Systems) 1:10PM - 5:00PM |
Session F MRAM II 1:10PM - 4:30PM |
| Coffee Break 2:50PM - 3:10PM | Coffee Break 2:40PM - 3:00PM | Coffee Break 2:40PM - 3:00PM | |
| 4:30PM: Closing Remarks | |||
Multi-purpose Hall |
Session BP HAMR & Systems Contributed Posters & Invited A, B, D Bierstube 5:10PM - 7:00PM |
Session DP MRMR & MRAM Contributed Posters & Invited C, E, F Bierstube 5:00PM - 6:40PM |
Optional NIMS and AIST tour Research Center for Magnetic and Spintronic Materials, NIMS, and Spintronics Research Center, AIST 4:45PM - 6:45PM |
| Okura Frontier Hotel Jupiter |
Banquet 7:00PM - 9:00PM |
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| Keynote 8:00PM - 8:30PM |
| Speaker | Affiliation | Title | ||
| C1 | Sooman Seo | SK Hynix Incorporated, Korea | 4 GBIT DENSITY STT-MRAM USING PERPENDICULAR MAGNETIC TUNNEL JUNCTIONS WITH COMPACT BIT CELL STRUCTURE | 8:50 |9:20 |
| C2 | Shunsuke Fukami | Tohoku University, Japan | SPIN-ORBIT TORQUE SWITCHING DEVICES FOR HIGH-SPEED MEMORIES AND ARTIFICIAL SYNAPSES | 9:20 |9:50 |
| C3 | Thibaut Devolder | CNRS University Paris-Sud, France | MATERIAL DEVELOPMENTS AND NANOSECOND-SCALE SWITCHING PROCESS IN PERPENDICULARLY MAGNETIZED STT-MRAM CELLS | 9:50 |10:20 |
| Coffee Break (10:20 - 10:40) | ||||
| C4 | Key Yakushiji | AIST, Japan | FURTHER TECHNOLOGIES FOR STT-MRAM | 10:40 |11:10 |
| C5 | Hiroyuki Tomita | Tokyo Electron Yamanashi Limited, Japan | INVESTIGATION FOR HIGH-DENSITY STT-MRAM | 11:10 |11:40 |
| C6 | Takayuki Nozaki | AIST, Japan | RECENT PROGRESS IN VOLTAGE-CONTROLLED MAGNETIC ANISOTROPY: TOWARDS THE REALIZATION OF VOLTAGE-TORQUE MRAM | 11:40 |12:10 |
| Lunch (12:10 - 13:10) | ||||
| Speaker | Affiliation | Title | ||
| D1 | Huaqing Yin | Seagate Technology, USA | JITTER IN HEAT-ASSISTED MAGNETIC RECORDING | 13:10 |13:40 |
| D2 | Lei XU | Western Digital Coropration, USA | NOISE SOURCES AND MECHANISMS IN HEAT-ASSISTED MAGNETIC RECORDING | 13:40 |14:10 |
| D3 | Steven Granz | Seagate Technology, USA | HEAT ASSISTED INTERLACED MAGNETIC RECORDING | 14:10 |14:40 |
| Coffee Break (14:40 - 15:00) | ||||
| D4 | Tobias Maletzky | Headway Technologies, USA | DISTRIBUTION-BASED RECORDING MODEL FOR HAMR | 15:00 |15:30 |
| D5 | Peter Czoschke | Seagate Technology, USA | INTERFERENCE FROM ADJACENT TRACKS IN HAMR RECORDING SYSTEMS: SIDE_READING AND ENCROACHMENT | 15:30 |16:00 |
| D6 | Jian-Gang (Jimmy) Zhu | Carnegie Mellon University, USA | MAGNETIC HEAD DESIGN FOR TRANSITION CURVATURE CORRECTION IN HAMR | 16:00 |16:30 |
| D7 | Bernd Lamberts | Western Digital Corporation, USA | ENERGY-ASSISTED RECORDING: SYSTEM ARCHITECTURE AND APPLICATIONS | 16:30 |17:00 |
| Speaker | Affiliation | Title | ||
| F1 | Hiroaki Yoda | Toshiba Corporation, Japan | VOLTAGE-CONTROL SPINTRONICS MEMORY HAVING POTENTIALS FOR HIGH-DENSITY AND HIGH-SPEED APPLICATIONS | 13:10 |13:40 |
| F2 | Hiroaki Sukegawa | National Institute for Materials Science, Japan | ADVANCED MAGNETIC TUNNEL JUNCTIONS USING SPINEL OXIDE BARRIERS | 13:40 |14:10 |
| F3 | Shigemi Mizukami | Tohoku University, Japan | NANO-LAYER OF TETRAGONAL Mn-BASED ALLOYS FOR MRAM APPLICATIONS | 14:10 |14:40 |
| Coffee Break (14:40 - 15:00) | ||||
| F4 | Xavier Marti | Academy of Sciences of the Czech Republic | STORING OR PROCESSING DATA WITH ANTIFERROMAGNETS? | 15:00 |15:30 |
| F5 | Tomohiro Nozaki | Tohoku University, Japan | Cr2O3 BASED MAGNETOELECTRIC FERRIMAGNET TOWARD MRAM APPLICATIONS | 15:30 |16:00 |
| F6 | Justin Shaw | National Institute of Standards and Technology, USA | ULTRA-LOW MAGNETIC DAMPING IN METALLIC AND HALF-METALLIC MATERIALS FOR DATA-STORAGE AND MRAM | 16:00 |16:30 |