1999
- Atomic-level in-situ Real-Space observation of Ga adatoms on GaAs(001)(2x4)-As
surface during Molecular beam Epitaxy Growth,
S. Tsukamoto and N. Koguchi,
Journal of Crystal Growth, 201/202 118-123 (1999)
- Transition from GaAs(001)(2x6)-S to (2x3)-S surfaces observed by synchrotron
radiation photoelectron spectroscopy, X-ray absorption near edge structure
and
X-ray standing waves,
S. Tsukamoto,
M. Shimoda, M. Sugiyama, Y. Watanabe, S. Maeyama, T. Ohno and
N. Koguchi,
Institute of Physics Conference Series, 162, 603-608 (1999)
- New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001)
Using
Droplet Epitaxy,
T. Mano, K. Watanabe, S. Tsukamoto, H. Fujioka, M. Oshima and N. Koguchi,
Japanese Journal of Applied Physics,
38, 603-608, L1009-L1011 (1999)
