1998

• Photoelectron and Auger Electron Diffraction Study of Sulfur-Terminated GaAs
  (001)-(2 x 6) Surface,
  M. Shimoda, S. Tsukamoto and N. Koguchi,
  Surface Science, 395, 75-81 (1998)

• Ga-S-Ga bridge bond formation in in-situ S-treated GaAs(001) surface observed
  by synchrotron radiation photoemission spectroscopy,
  M. Sugiyama, S. Maeyama, Y. Watanabe, S. Tsukamoto and N. Koguchi,
  Applied Surface Science, 130-132, 436-440 (1998)

• Coverage analysis of a sulfur-terminated GaAs(001)-(2x6) surface: the effect of
  double sulfur-treatment,
  M. Shimoda, S. Tsukamoto and N. Koguchi,
  Surface Science, 402-404, 669-672 (1998)

• Realtime in-situscanning tunneling microscopy observation of Ga adatoms near
  step edges on GaAs(001)(2×4)-As surface,
  S. Tsukamoto and N. Koguchi,
  Extended Abstracts of the 17th Eletronic Materials Symposium, lzu-Nagaoka
  (July 8-10), 209-210 (1998)

• Fabrication of Buried GaAlAs Microcrystal Structures by Droplet Epitaxy,
  K. Watanabe and N. Koguchi,
  Journal of Surface Analysis, JSA, 4, 316-319 (1998)

• Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature
  droplet epitaxy,
  C.D. Lee, C. Park, H.J. Lee, K.S. Lee, S.J. Park, C.G. Park, S.K. Noh and N.Koguchi,
  Japanese Journal of Applied Physics, 37, 7158-7160 (1998)

• GaAs microcrystal growth on semiconductor surfaces by low energy focused ion
  beam,
  T. Chikyow and N. Koguchi,
  The Journal of Vacuum Science Technology B, 16, 2538-2542 (1998)