2002

• Multiexciton transients in a single quantum dot,
  T. Kuroda, S. Sanguinetti, F. Minami, K. Watanabe and N. Koguchi,
  Superlattices And Microstructures, 32 (4-6), 239-247 (2002)

• Cross-sectional scanning tunneling microscopy study of InGaAs quantum dots on
  GaAs(001) grown by heterogeneous droplet epitaxy,
  N. Liu, H.K. Lyeo, C.K. Shih, M. Oshima, T. Mano and N. Koguchi,
  Applied Physics Letters, 80, 4345-4347 (2002)

• Optical properties of In0.5Ga0.5As/GaAs quantum dots grown by heterogeneous
  droplet epitaxy with post-growth annealing,
  C.M. Lee, S.K. Noh, D.H. Lee, J.Y. Leem, I.K. Han, T. Mano and N. Koguchi,
  Journal of the Korean Physical Society, 41, L579-L582 (2002)

• Picosecond nonlinear relaxation of photoinjected carriers in a single GaAs/Al
  0.3Ga0.7As quantum dot,
  T. Kuroda, S. Sanguinetti, M. Gurioli, K. Watanabe, F. Minami and N. Koguchi,
  Physical Review B, 66 (12), art. no. 121302 (2002)

• Temperature dependence of the photoluminescence of InGaAs/GaAs quantum
  dot structures without wetting layer,
  S. Sanguinetti, T. Mano, M. Oshima, T. Tateno, M. Wakaki and N. Koguchi,
  Applied Physics Letters, 81 (16), 3067-3069 (2002)

• Post-growth annealing effects of In0.5Ga0.5As quantum dots grown by
  heterogeneous droplet epitaxy,
  C.M. Lee, J.I. Lee, J.Y. Leem, D.H. Lee, T. Mano, T. Tateno and N. Koguchi,
  Journal of the Korean Physical Society, 41 (1), 134-138 (2002).

• Effects of post-growth annealing on the optical properties of self-assembled
  GaAs/AlGaAs quantum dots,
  S. Sanguinetti, K. Watanabe, T. Kuroda, F. Minami, Y. Gotoh and N. Koguchi,
  Journal of Crystal Growth, 242 (3-4), 321-331 (2002)

• Role of the wetting layer in the carrier relaxation in quantum dots,
  S. Sanguinetti, K. Watanabe, T. Tateno, M. Wakaki, N. Koguchi, T. Kuroda,
  F. Minami and M. Gurioli,
  Applied Physics Letters, 81 (4), 613-615 (2002)

• Multiexcitonic effects in the carrier dynamics in single quantum dot,
  S. Sanguinetti, T. Kuroda, M. Gurioli, K. Watanabe, Y. Gotoh, F. Minami
  and N. Koguchi,
  Physica Status Solidi A-Applied Research, 190 (2), 589-592 (2002)

• New Structure model for the GaAs(001)-c(4x4) surface,
  A. Ohtake, J. Nakamura, S. Tsukamoto, N. Koguchi and A. Natori,
  Physical Review Letters, 89, 206102 (2002)　

• Structure analysis of the Ga-stabilized GaAs(001)-c(8x2) surface at high
  temperatures,
  A. Ohtake, S. Tsukamoto, M. Pristovsek, N. Koguchi and M. Ozeki,
  Physical Review B, 65, 233311 (2002)　

• Atomic structures of the GaAs(001)-(2x4) surfaces under As fluxes,
  A. Ohtake, M. Ozeki, T. Yasuda and T. Hanada,
  Physical Review B, 65, 165315 (2002)
  Physical Review B 66, 209902(E) (2002)

• Strain-induced surface segregation in In0.5Ga0.5As/GaAs heteroepitaxy,
  A. Ohtake, M. Ozeki, M. Terauchi, F. Sato and M. Tanaka,
  Applied Physics Letters, 80, 3931 (2002)

• Growth mode of InxGa1-xAs (0x0.5) on GaAs(001) under As-deficient conditions,
  A. Ohtake and M. Ozeki,
  Physical Review B, 65, 155318-1 (2002)

• Extreme band bending at MBE-grown InAs(001) surfaces induced by in situ
  sulphur passivation,
  M.J. Lowe, T.D. Veal, C.F. McConville, G.R. Bell, S. Tsukamoto and N. Koguchi,
  Journal of Crystal Growth, 237, 196-200 (2002)