2001
- Surface structures of GaAs{111}A, B-(2x2),
A. Ohtake, J. Nakamura, T. Komura, T. Hanada, T. Yao, H. Kuramochi and M. Ozeki,
Physical Review B, 64, 045318-1~8 (2001)
- Wurtzite-zincblende polytypism in ZnSe on GaAs(111)A,
A. Ohtake, J. Nakamura, M. Terauchi, F. Sato, M. Tanaka, K. Kimura and T. Yao,
Physical Review B, 63, 195325-1, (2001)
- In-situ observation of surface processes in InAs/GaAs(001) heteroepitaxy:
The
role of As on the growth mode,
A. Ohtake and M. Ozeki,
Applied Physics Letters, 86, 431 (2001)
- Dynamics of Ga Clusters on GaAs(001) Surface,
S. Tsukamoto and N. Koguchi,
Materials Research Society Symposium Proceedings, 648, 11-20 (2001)
- In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance
Anisotropy Spectroscopy,
M. Pristovsek, S. Tsukamoto, N. Koguchi, B. Han, K. Haberland, J.-T. Zettler,
W. Richter, M. Zorn and M. Weyers,
Physical Status Solidi A, 188, 1423-1429 (2001)
- Indium segregation in the fabrication of InGaAs concave disks by heterogeneous
droplet epitaxy,
T. Mano, S. Tsukamoto, N. Koguchi, H. Fujioka and M. Oshima,
Journal of Crystal Growth, 227, 1069-1072 (2001)
- Photoluminescence studies of GaAs quantum dots grown by droplet epitaxy,
K. Watanabe, S. Tsukamoto, Y. Gotoh and N. Koguchi,
Journal of Crystal Growth, 227, 1073-1077 (2001)
- Properties of semiconductor quantum dots and magnetic nanocrystals grown
by
molecular beam epitaxy,
M. Oshima, T. Mano, M. Mizuguchi, K. Ono, H. Fujioka, H. Akinaga and N. Koguchi,
Journal of the Korean Physical Society, 38, 396-400 (2001)
- Transmission electron microscope study of InGaAs quantum dots fabricated
by
SPEED method,
T. Mano, S. Tsukamoto, N. Koguchi, H. Fujioka, M. Oshima, C.D. Lee, J.Y. Leem,
H.J. Lee and S.K. Noh,
Journal of the Korean Physical Society, 38, 401-404 (2001)
- High-quality GaAs quantum dots grown using a modified droplet epitaxy technique,
K. Watanabe, N. Koguchi, K. Ishige, C.D. Lee, J.Y. Leem, H.J. Lee and S.K. Noh,
Journal of the Korean Physical Society, 38(1), 25-28 (2001)
