1993

• Growth of GaAs Epitaxial Microcrystals on an S-terminated GaAs substrate by
  Successive Irradiation of Ga and As Molecular Beams,
  N. Koguchi and K. Ishige,
  Japanese Journal of Applied Physics, 32, 2052 (1993)

• New Selective MBE Growth Method for Direct Formation of GaAs Quantum Dots,
  N. Koguchi, K. Ishige and S. Takahashi,
  Journal of Vacuum Science Technology B, 11, 787 (1993)

• Growth of GaAs Epitaxial Microcrystals on an S-terminated GaAs(001) byVLS
  Mechanism in MBE,
  N. Koguchi, K. Ishige and S. Takahashi,
  MRS Symposium Proceedings, 283, 815 (1993)

• Growth of GaAs Epitaxial Microcrystals on an S-terminated GaAs in MBE,
  N. Koguchi, K. Ishige and S. Takahashi,
  12th Record of Alloy Semiconductor Physics and Electronics Symposium, 217
  (1993)

• Arsenic adsorption on GaAs(001),
  H. Noerenberg and N. Koguchi,
  Surface Science, 296, 199-212 (1993)

• Growth of GaAs epitaxial microcrystals by Droplet Epitaxy,
  N. Koguchi,(in Japanese)
  Nihon Kinzoku Gakkai Kaiho, 32, 485-494 (1993)