New MBE Growth Method for InSb Quantum Well Boxes,
N.Koguchi, S.Takahashi and T.Chikyow, J.Crystal Growth 111 (1991) 688.

Growth of GaAs Epitaxial Microcrystals on an S-terminated GaAs substrate
by Successive Irradiation of Ga and As Molecular Beams,
N.Koguchi and K.Ishige, Jpn.J.Appl.Phys.32 (1993) 2052.
New Selective MBE Growth Method for Direct Formation of GaAs Quantum Dots,
N.Koguchi, K.Ishige and S.Takahashi, J.Vac.Sci.Technol.B11 (1993) 787.

New Self-Organized Growth Method for InGaAs Quantum Dots on GaAs(001) Using Droplet Epitaxy,
T. Mano, K. Watanabe, S. Tsukamoto, H. Fujioka, M. Oshima and N. Koguchi,
Jpn. J. Appl. Phys. Vol 38 (1999) L1009.

Fabrication of GaAs Quantum Dots by Modified Droplet Epitaxy,
K.Watanabe, N.Koguchi and Y.Gotoh, Jpn. J. Appl. Phys. 39 (2000) L79.

Self-Assembly of Concentric Quantum Double Rings,
T. Mano, T. Kuroda, S. Sanguinetti, T. Ochiai T. Tateno, J. S. Kim, T. Noda, M. Kawabe,K. Sakoda, G. Kido and N. Koguchi,
Nano Letters 5, 3, 425-428 (2005)

Optical transitions in quantum ring complexes,
T. Kuroda, T. Mano, T. Ochiai, S. Sanguinetti, K. Sakoda, G. Kido and N. Koguchi
Physical Review B 72, 205301(2005)

New Structure model for the GaAs(001)-c(4x4) surface,
A. Ohtake, J. Nakamura, S. Tsukamoto, N. Koguchi, and A. Natori,
Physical Review Letters 89, 206102 (2002).　

Atomic structures of the GaAs(001)-(2x4) surfaces under As fluxes,
A. Ohtake, M. Ozeki, T. Yasuda, and T. Hanada,
Physical Review B 65, 165315 (2002); Physical Review B 66, 209902(E) (2002)

Two types of structures for the GaAs(001)-c(4x4) surface,
A.Ohtake and N.Koguchi,
Applied Physics Letters, 83 (25) (2003)

Ga-Rich Limit of Sueface Reconstructions on GaAs(001): Atomic Structure of the (4×6) Phase
A. Ohtake, P. Kocan,K. Seino, W. G. Schmidt and N. Koguchi,
Physical Review Letters PRL 93, 266101 (2004)

Kinetics in surface reconstructions on GaAs(001),
A. Ohtake, P. Kocan, J. Nakamura, A. Natori, and N. Koguchi,
Physical Review Letters 92, 236105 (2004)

Epoch-making paper in the field of "Surface structure analysis"

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Improvement of optical properties of air-exposed regrowth interfaces embedded in
InAs quantum dots and GaAs/AlGaAs quantum wells by atomic hydrogen,
J.S. Kim, M. Kawabe and N. Koguchi,
Japanese Journal of Applied Pnysics Part 2-Letters, 43 (1A-B), L103-L104 (2004)

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Epoch-making paper in the field of "Atomic Hydrogen for MBE Regrowth Interface"