1997

• Scanning Tunneling Microscopy and First-Principles Investigation on GaAs(001)
  (2x6)-S Surface formed by molecular beam epitaxy,
  S. Tsukamoto, T. Ohno and N. Koguchi,
  Journal of Crystal Growth, 175/176, 1303-1308 (1997)

• X-ray Standing Wave Study of GaAs(001)(2x6)-S Surface,
  S. Tsukamoto, M. Sugiyama, M. Shimoda, Y. Watanabe, S. Maeyama, T. Ohno and
  N. Koguchi,
  Photon Factory Activity Report, 15, 243 (1997)

• Synchrotron Radiation Photoelectron Spectroscopy Study of Surfur-terminated
  GaAs(001)(2x6) Surface,
  M. Shimoda, Y. Watanabe, S. Tsukamoto, M. Sugiyama, S. Maeyama, T. Ohno and
  N. Koguchi,
  Photon Factory Activity Report, 15, 244 (1997)

• S-treated GaAs(001) Surface Studied by X-ray Absorption near Edge Structure,
  M. Sugiyama, S. Tsukamoto, M. Shimoda, S. Maeyama, Y. Watanabe, T. Ohno and
  N. Koguchi,
  Photon Factory Activity Report, 15, 245 (1997)

• Direct Ga deposition by low-energy focused ion-beam system,
  T. Chikyow, N. Koguchi and A. Shikanai,
  Surface Science, 386, 254-258 (1997)