2003

• Gallium-rich reconstructions on GaAs(001),
  M. Pristovsek, S. Tsukamoto, A. Ohtake, N. Koguchi, B.G. Orr, W.G. Schmidt and
  J. Bernholc,
  Physica Status Solidi B-Basic Research, 240 (1), 91-98 (2003)

• In situ scanning tunneling microscopy of InAs quantum dots on GaAs(001)
  during molecular beam epitaxial growth,
  G.R. Bell, M. Pristovsek, S. Tsukamoto, B.G. Orr, Y. Arakawa and N. Koguchi,
  Surface Science, 544 (2-3), 234-240 (2003)

• Optical properties of GaAs/AlGaAs quantum dots grown by droplet epitaxy with
  post-growth annealing,
  C.M. Lee, J.I. Lee, D.H. Lee, J.Y. Leem, I.K. Han and N. Koguchi,
  Journal of the Korean Physical Society, 43 (4), L447-L451 Part 1 (2003)

• Auger processes in InGaAs QDs grown by using the droplet method,
  J.I. Lee, I.K. Han, N. Koguchi, T. Kuroda and F. Minami,
  Journal of the Korean Physical Society, 43 (4), 553-556 Part 1 (2003)

• Structure of Ga-stabilized GaAs(001) surfaces at high temperatures,
  A. Ohtake, S. Tsukamoto, M. Pristovsek and N. Koguchi,
  Applied Surface Science, 212, 146-150 (2003)

• Modified droplet epitaxy GaAs/AlGaAs quantum dots grown on a variable
  thickness wetting layer,
  S. Sanguinetti, K. Watanabe, T. Tateno, M. Gurioli, P. Werner, M. Wakaki and
  N. Koguchi,
  Journal of Crystal Growth, 253 (1-4), 71-76 (2003)

• Carrier relaxation in quantum dots without wetting layer,
  S. Sanguinetti, M. Gurioli, T. Kuroda, K. Watanabe, T. Tateno, F. Minami, M. Wakaki
  and N. Koguchi,
  Physica E-Low-Dimentional Systems & Nanostructures, 17 (1-4), 91-92 (2003)

• Two types of structures for the GaAs(001)-c(4x4) surface,
  A.Ohtake and N.Koguchi,
  Applied Physics Letters, 83 (25) (2003)

• Growth of InAs Quantum Dot without Introducing Wetting Layer by Alternate
  Deposition
  of InAs and GaAs with Quasi-monolayer,
  J.S. Kim, N. Koguchi, D.Y. Lee, I.H. Bae, J.I. Lee, G.H. Kim, S.K. Kang, S.I. Ban,
  J.S. Kim, S.H. Lee, H.K. Choi, M. Jeon and J.Y. Leem,
  Journal of the Korean Physical Society, 42, S476-S479 (2003)

• Passivation and reconstruction-dependent electron accumulation at sulphurtreated
  InAs(001) surfaces
  T.D. Veal, M. Lowe, C.F. McConville, G.R. Bell, S. Tsukamoto and N. Koguchi,
  Surface Science, 523 (1-2), 179-188 (2003)

• Ga-rich GaAs(001) surfaces observed by STM during high-temperature annealing
  in MBE,
  S. Tsukamoto, M. Pristovsek, A. Ohtake, B.G. Orr, G.R. Bell, T. Ohno and N. Koguchi,
  Journal of Crystal Growth, 251(1-4), 46-50 (2003)