Near room temperature droplet epitaxy for fabrication of InAs quantum dots
J.S. Kim and N. Koguchi,
Applied Physics Letters 85, 24, 5893-5895 (2004)
Ga-Rich Limit of Sueface Reconstructions on GaAs(001): Atomic Structure of the (4×6) Phase A. Ohtake, P. Kocan,K. Seino, W. G. Schmidtand
N. Koguchi, Physical Review Letters PRL 93, 266101 (2004)
Kinetics in surface reconstructions on GaAs(001),
A. Ohtake, P. Kocan, J. Nakamura, A. Natori and N. Koguchi,
Physical Review Letters 92, 236105 (2004)
Dependence of quantum dot Auger carrier relaxation on barrier dimensionality:
an experimental study,
S. Sanguinetti, M. Gurioli, K. Watanabe, T. Tateno and N. Koguchi,
Semiconductor Science Technology, 19, 4, S293-S295 (2004)
Improvement of optical properties of air-exposed regrowth interfaces embedded
in InAs quantum dots and GaAs/AlGaAs quantum wells by atomic hydrogen, J.S. Kim, M. Kawabe and N. Koguchi,
Japanese Journal of Applied Physics Part 2-Letters, 43 (1A-B), L103-L104
(2004)
Fabrication of highly aligned nano-hole/trench structures by atomic force
microscopy
tip-induced oxidation and atomic hydrogen cleaning,
J.S. Kim, M. Kawabe and N. Koguchi,
Journal of Crystal Growth, 262 (1-4), 265-270 (2004)
Structural features of Ga-rich GaAs(001) surfaces: Scanning tunneling microscopy study,
P.Kocan, A.Ohtake and N.Koguchi,
Phys. Rev. B 70 (20), Art. No. 201303 (2004)
