Home > News Release > Press Release > 2011 > Success in Development of Ultra-High Sensitivity Sensor with High Generality

Success in Development of Ultra-High Sensitivity Sensor with High Generality

Expected Applications in Fields Including Medicine, Biotechnology, Environment, and Security

National Institute for Materials Science

Dr. Genki Yoshikawa, a Researcher at the International Center for Materials Nanoarchitectonics, NIMS, in joint work with the École polytechnique fédérale de Lausanne (EPFL), one of two Swiss Federal Institutes of Technology, and Dr. Heinrich Rohrer, 1986 Nobel Laureate in Physics, succeeded in developing a revolutionary membrane-type surface stress sensor (MSS) with dramatically improved sensitivity in comparison with conventional sensors.

Abstract

Dr. Genki Yoshikawa, a Researcher at the International Center for Materials Nanoarchitectonics (MANA, Director-General: Masakazu Aono), National Institute for Materials Science (President: Sukekatsu Ushioda), in joint work with the École polytechnique fédérale de Lausanne (EPFL), one of two Swiss Federal Institutes of Technology, and Dr. Heinrich Rohrer, 1986 Nobel Laureate in Physics, succeeded in developing a revolutionary membrane-type surface stress sensor (MSS) with dramatically improved sensitivity in comparison with conventional sensors. As miniaturization, integration, multi-channeling, etc. are possible with the developed sensor, and it can also be mass-produced in the same manner as semiconductor devices, application to a wide range of fields is possible, including medicine, biotechnology, the environment, and security.

"Figure: The newly-developed membrane-type surface stress sensor (MSS). The surface stress due to analyte molecules adsorbed on the center of the membrane can be detected with good efficiency by piezoresistance embedded in four bridges around the membrane." Image

Figure: The newly-developed membrane-type surface stress sensor (MSS). The surface stress due to analyte molecules adsorbed on the center of the membrane can be detected with good efficiency by piezoresistance embedded in four bridges around the membrane.



Inquiry about this page

For more detail
Genki Yoshikawa
International Center for Materials Nanoarchitectonics (MANA)
National Institute for Materials Science
TEL: +81-29-851-3354 (Ext. 8908)
E-Mail:電子メールアドレス
For general inquiry
NIMS Public Relations Office
TEL:+81-29-859-2026
FAX:+81-29-859-2017
E-Mail:電子メールアドレス

National Institute for Materials Science (NIMS)
1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, JAPAN
TEL.+81-(0)-29-859-2000
FAX.+81-(0)-29-859-2029