1. Home
  2. > News Room
  3. > World Highest Performance Nanodielectrics …

Press ReleasePress Release 2011

World Highest Performance Nanodielectrics

- Tailor-Made Nanocrystals via Controlled Nanoscale Doping -

20 Jul, 2011

Site engineering via doping, a well-known technique in bulk materials, is now useful for designing high-k properties of individual nanocrystals. In one-nanometer-thick TiO2-based nanosheets, the distrotion induced by Nb doping results in large permittivity (εr =320) and simultaneously stabilizes their dielectric response in a ultrathin form (< 10 nm), contrasting to current high-k films. Our work provides a new recipe for designing nanodielectrics desirable for future capacitor and memory devices.

fig. 1

Figure. Tailor-made dielectric nanosheet via controlled nanoscale doping. (a) Structural change induced by Nb doping. (b) AFM image of Nb-doped nanosheet

Further information


Minoru Osada1,Takayoshi Sasaki1

  1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)

News Room