Press Release 2010
Success in Clarifying Missing Gap and Unveiling Uncertain Factors for Graphene Electronics
30 Aug, 2010
This research was headed by
Hisao Miyazaki & Kazuhito Tsukagoshi
Hisao Miyazaki & Kazuhito Tsukagoshi
Induced band gap in graphene has been successfully elucidated via electric transport experiments. This is a key to realize electronic devices using graphene. They are the thinnest high conductive thin film (atomic film) on earth.
Figure 1: (Left) Schematic view of a graphene transistor gated with SiO2/Si-substrate back gate and Al top gate. (Right) Arrhenius plot of the minimum conductance at an electric field E = 1.2 V/nm. Experimental data (squares) are fitted by a sum of the variable-range-hopping (VRH) conduction and the thermally activated (TA) conduction (solid curve). The contribution by the VRH conduction is indicated by a dashed curve.