News : NIMS/Research Center for Electronic and Optical Materials

News Topics

2025.10.28 recruit Post-DOC
Call for Post-DOCs to be involved in the development of glass materials with superior physical properties compared to silica glass.
2025.10.16 recruit Post-DOC
Call for Post-DOCs to be involved in the preparation and evaluation of slurries in ceramic fabrication processes, as well as the development of ultra-high-temperature ceramics with enthusiasm.
2025.10.01 staff reassignment New Researcher Joins Ultra-wide Bandgap Semiconductors Group
SASAMA, Yosuke has joined the group as a researcher.
Ultra-wide Bandgap Semiconductors Group
SASAMA, Yosuke
2025.09.29 event Completed We held a joint exchange meeting between the two centers.
We held a joint exchange meeting between The Research Center for Electronic and Optical Materials and The Center for Basic Research on Materials.
A total of 120 participants attended, and the event was successfully concluded.

Date2025.09.26

PlaceTsukuba International Congress Center
2025.09.22 papers
A new paper on comprehensively reviewing metasurfaces that have potential in practical applications, with particular emphasis on detailing metasurface fluorescence biosensors in depth, has been published by IWANAGA, Masanobu et al.
Nanophotonics Group

TitleMetasurface biosensors: Status and prospects

AuthorIwanaga, Masanobu; Hu, Qi; Tang, Youhong

Biblio. Info.Appl. Phys. Rev., 12(2), 21305-1–21305-24, (2025)

URLhttps://pubs.aip.org/aip/apr/article/12/2/021305/3342510/Metasurface-biosensors-Status-and-prospects
2025.09.19 highlights
KOBAYASHI, Kiyoshi / Optical Ceramics Group's paper ranked third in the period download count rankings forElectrocemistry journal. (Period: July–August 2025)

TitleExtended Distribution of Relaxation TimeAnalysis for Electrochemical ImpedanceSpectroscopy

AuthorKiyoshi KOBAYASHI; Tohru S. SUZUKI

Biblio. Info.Electrochemistry, 90(1), 017004, (2022)

URLhttps://www.jstage.jst.go.jp/article/electrochemistry/90/1/90_21-00111/_article/-char/ja
2025.09.19 recruit Post-DOC
Call for Post-DOCs to be involved in Research on fundamental properties of semiconductor materials for quantum sensing applications using NV centers formed in diamond, etc.
2025.09.16 papers
A new paper on We previously reported that a dummy-SiO₂ process improved the dielectric/GaN interface properties; however, the improvement mechanism has remained unclear. This study reveal that disordered GaN(O) polarity in the interfacial layer in a sample prepared by the standard process was restored to some extent after the dummy-SiO₂ process, which likely led to the improved interface electrical properties has been published by IROKAWA, Yoshihiro et al.
Ultra-wide Bandgap Semiconductors Group

TitleObservation of Atomic-Scale Structural Changes in Al₂O₃/GaN Interfacial Layers Prepared with a Dummy-SiO₂ Process

AuthorUzuhashi, Jun; Irokawa, Yoshihiro; Nabatame, Toshihide; Ohkubo, Tadakatsu; Koide, Yasuo

Biblio. Info.ECS J. Solid State Sci. Technol., 14(8), 85001-1–85001-4, (2025)

URLhttps://iopscience.iop.org/article/10.1149/2162-8777/adf3e3
2025.09.09 papers
A new paper on Computational evaluation of electronic states and chemical bonding in semiconducting 3d transition metal silicides has been published by IMAI, Motoharu et al.
Electro-ceramics Group

TitleElectronic structure and chemical bonding in semiconducting 3d transition-metal silicides CrSi₂, Mn₄Si₇, and β-FeSi₂

AuthorImai, Motoharu; Arai, Masao

Biblio. Info.Jpn. J. Appl. Phys., 64(6), 61003-1–61003-6, (2025)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/ade487
2025.09.09 papers
A new paper on Experimental and computational investigations on physical properties of SrSi₂ has been published by IMAI, Motoharu et al.
Electro-ceramics Group

TitleStrontium disilicide SrSi₂: Narrow band gap semiconductor or Weyl semimetal?

AuthorImai, Motoharu; Udono, Haruhiko; Alinejad, Babak; Nakane, Takayuki; Takahashi, Hiroki; Arai, Masao

Biblio. Info.J. Alloy. Compd., 1032, 181074-1–181074-9, (2025)

URLhttps://www.sciencedirect.com/science/article/pii/S0925838825026350?via%3Dihub
2025.09.08 event Materials Research Society Presents: “MRS 2025 Fall Meeting”
TERAJI, Tokuyuki / Semiconductor Defect Design Group will be speaking at the invited lecture.

DateNovember 30 - December 5, 2025

URLhttps://www.mrs.org/meetings-events/annual-meetings/2025-mrs-fall-meeting
2025.09.05 papers
A new paper on the interface control of n-oxide semiconductor/p-Si tunnel field-effect transistors for power-saving semiconductor devices has been published by NAGATA, Takahiro, CHIKYO, Toyohiro et al.
Nano Electronics Device Materials Group

TitleEffects of interface formation process on electronic properties of n-type Ti0.3Zn0.7O1.3/p-type Si stack structure

AuthorOgawa, Kenta; Chikyow, Toyohiro; Daimon, Yuki; Ogura, Atsushi; Nagata, Takahiro

Biblio. Info.Jpn. J. Appl. Phys., 64(5), 05SP25-1–05SP25-7, (2025)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/add0be
2025.09.05 papers
A new paper on A mixed solvent enables efficient nylon recycling, including PA11, with >98% recovery of polymers and fillers while preserving properties for sustainable reuse has been published by TAMURA, Kenji et al.
Environmental Circulation Composite Material Group

TitleRoom‐Temperature Material Recycling/Upcycling of Polyamide Waste Enabled by Cosolvent‐Tunable Dissolution Kinetics

AuthorTanks, Jonathon; Tamura, Kenji

Biblio. Info.Angew. Chem.-Int. Edit., -1–-11, (2025)

URLhttps://mdr.nims.go.jp/datasets/910dc912-2433-4644-8521-017f93cc054a
2025.09.05 papers
A new paper on A method for generally predicting chemical bonding at the metal–oxide interface including interface reaction and its implementation to a free software, InterChemBond has been published by YOSHITAKE, Michiko.
Nano Electronics Device Materials Group

TitleGeneral Prediction of Interface Chemical Bonding at Metal–Oxide Interface with the Interface Reaction Considered

AuthorYoshitake, Michiko

Biblio. Info.Materials, 18(13), 3096-1–3096-17, (2025)

URLhttps://www.mdpi.com/1996-1944/18/13/3096
2025.09.04 papers
A new paper on Air-gap structures were formed on (001) β-Ga₂O₃ using crystallographic anisotropic HCl gas etching has been published by OSHIMA, Takayoshi et al.
Ultra-wide Bandgap Semiconductors Group

TitleFabrication of air bridges on (100) β-Ga₂O₃ using crystallographic HCl gas etching

AuthorOshima, Takayoshi; Oshima, Yuichi

Biblio. Info.AIP Adv., 15(5), 55207-1–55207-7, (2025)

URLhttps://pubs.aip.org/aip/adv/article/15/5/055207/3345950/Fabrication-of-air-bridges-on-100-Ga2O3-using
2025.09.04 papers
A new paper on A step-and-terrace structure was achieved on the (001) β-Ga₂O₃ surface using an aqueous tetramethylammonium hydroxide solution has been published by OSHIMA, Takayoshi.
Ultra-wide Bandgap Semiconductors Group

TitleStep-and-terrace surface formation on (001) β-Ga₂O₃ by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer

AuthorOshima, Takayoshi

Biblio. Info.Jpn. J. Appl. Phys., 64(8), 88001-1–88001-5, (2025)

URLhttps://iopscience.iop.org/article/10.35848/1347-4065/adf380
2025.09.04 papers
A new paper on Normally-off boron-doped diamond MOSFETs are fabricated on a 150 nm-thick epitaxial layer with breakdown voltage over 1.7 kV has been published by LIU, Jiangwei et al.
Semiconductor Defect Design Group

TitleNormally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV

AuthorLiu, J.; Teraji, T.; Da, B.; Koide, Y.

Biblio. Info.Appl. Phys. Lett., 127(4), 42601-1–42601-4, (2025)

URLhttps://pubs.aip.org/aip/apl/article/127/4/042601/3356215/Normally-off-boron-doped-diamond-MOSFETs-with-a
2025.09.04 papers
A new paper on polarity-controlled GaAs/Ge/GaAs heterostructures on the {111}-oriented substrates has been published by OHTAKE, Akihiro,HAYASHI, Yusuke et al.
Semiconductor Epitaxial Structures Group group

TitleControlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures

AuthorOhtake, Akihiro; Hayashi, Yusuke

Biblio. Info.Appl. Phys. Lett., 126(20), 201601-1–201601-6, (2025)

URLhttps://pubs.aip.org/aip/apl/article/126/20/201601/3347176/Controlled-polarity-inversion-in-GaAs-Ge-GaAs-111
2025.09.04 papers
A new paper on the effect of ligands in perovskite structures: a collaborative study with Bandung Institute of Technology has been published by YAMASHITA, Yoshiyuki et al.
Nano Electronics Device Materials Group

TitleThe effect of surface ligands on the surface chemical states and photoluminescence characteristics in cesium lead bromide perovskite nanocrystals

AuthorAsharuddin, Muhammad; Hidayat, Rahmat; Nurunnizar, Adhita Asma; Nursam, Natalita Maulani; Yandri, Valdi Rizki; Arsyad, Waode Sukmawati; Suwardy, Joko; Indari, Efi Dwi; Yamashita, Yoshiyuki

Biblio. Info.RSC Adv., 15(37), 30727–30741, (2025)

URLhttps://pubs.rsc.org/en/content/articlelanding/2025/ra/d5ra05099e
2025.09.04 papers
A new paper on Surface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleSurface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator

AuthorGu, Keyun; Zhang, Zilong; Huang, Jian; Koide, Yasuo; Koizumi, Satoshi; Liao, Meiyong

Biblio. Info.Appl. Phys. Lett., 126(22), 221901-1–221901-6, (2025)

URLhttps://pubs.aip.org/aip/apl/article/126/22/221901/3348240/Surface-desorption-properties-of-hydrogen
2025.09.04 papers
A new paper on Ultra-High Sensitivity, Wide-Range Thermometry Based on High-Quality Microscale Diamond Resonators has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group

TitleUltra-High Sensitivity, Wide-Range Thermometry Based on High-Quality Microscale Diamond Resonators

AuthorZhao, Wen; Chen, Guo; Teraji, Tokuyuki; Koide, Yasuo; Toda, Masaya; Liao, Meiyong

Biblio. Info.Adv. Mater., -1–-10, (2025)

URLhttps://advanced.onlinelibrary.wiley.com/doi/10.1002/adma.202502012
2025.09.04 papers
A new paper on Reduction in dislocation density in α-gallium oxide by epitaxial lateral over growth using a stripe mask with ultra-narrow windows has been published by OSHIMA, Yuichi et al.
Ultra-wide Bandgap Semiconductors Group

TitleEpitaxial lateral overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows

AuthorOshima, Yuichi; Shinohe, Takashi

Biblio. Info.Appl. Phys. Lett., 126(20), 202104-1–202104-5, (2025)

URLhttps://pubs.aip.org/aip/apl/article/126/20/202104/3347404/Epitaxial-lateral-overgrowth-of-c-plane-Ga2O3
2025.09.04 papers
A new paper on Effect of controlled surface arsenic stoichiometry of GaAs surfaces on the luminescence properties of embedded nanostructures after oxidation has been published by MANO, Takaaki , OHTAKE, Akihiro et al.
Semiconductor Epitaxial Structures Group

TitleEffects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation

AuthorMa, Zhao; Mano, Takaaki; Ohtake, Akihiro; Kuroda, Takashi

Biblio. Info.J. Appl. Phys., 137(24), 243102-1–243102-7, (2025)

URLhttps://pubs.aip.org/aip/jap/article/137/24/243102/3350691/Effects-of-arsenic-oxides-on-GaAs-surfaces-on