News Topics
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2025.09.09
papers
A new paper on Computational evaluation of electronic states and chemical bonding in semiconducting 3d transition metal silicides has been published by IMAI, Motoharu et al.
Electro-ceramics Group
TitleElectronic structure and chemical bonding in semiconducting 3d transition-metal silicides CrSi2, Mn4Si7, and β-FeSi2
AuthorImai, Motoharu; Arai, Masao
Biblio. Info.Jpn. J. Appl. Phys., 64(6), 61003-1–61003-6, (2025)
URLhttps://iopscience.iop.org/article/10.35848/1347-4065/ade487
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2025.09.09
papers
A new paper on Experimental and computational investigations on physical properties of SrSi2 has been published by IMAI, Motoharu et al.
Electro-ceramics Group
TitleStrontium disilicide SrSi2: Narrow band gap semiconductor or Weyl semimetal?
AuthorImai, Motoharu; Udono, Haruhiko; Alinejad, Babak; Nakane, Takayuki; Takahashi, Hiroki; Arai, Masao
Biblio. Info.J. Alloy. Compd., 1032, 181074-1–181074-9, (2025)
URLhttps://www.sciencedirect.com/science/article/pii/S0925838825026350?via%3Dihub
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2025.09.08
event
Materials Research Society Presents: “MRS 2025 Fall Meeting”
TERAJI, Tokuyuki / Semiconductor Defect Design Group will be speaking at the invited lecture.
DateNovember 30 - December 5, 2025
URLhttps://www.mrs.org/meetings-events/annual-meetings/2025-mrs-fall-meeting
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2025.09.08
event
The Japan Scociety of High Pressure Science and Technology Presents: “29th International Conference on High Pressure Science and Technology”
YAMANE, Ryo / Environmental Circulation Composite Material Group will be speaking at the invited lecture.
DateSeptember 28 - October 3, 2025
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2025.09.05
event
The Electrochemical Society Presents: “248th ECS Meeting”
NAGATA, Takahiro / Nano Electronics Device Materials Group will be speaking at the invited lecture.
DateOctober 12-16, 2025
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2025.09.05
event
The Ceramic Society of Japan Presents: “Chemothermal Pulverization Process - An Attempt at Recycling Ceramics”
OHASHI, Naoki / Electro-ceramics Group will be speaking at the invited lecture.
DateOctober 5–9, 2025
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2025.09.05
papers
A new paper on the interface control of n-oxide semiconductor/p-Si tunnel field-effect transistors for power-saving semiconductor devices has been published by NAGATA, Takahiro, CHIKYO, Toyohiro et al.
Nano Electronics Device Materials Group
TitleEffects of interface formation process on electronic properties of n-type Ti0.3Zn0.7O1.3/p-type Si stack structure
AuthorOgawa, Kenta; Chikyow, Toyohiro; Daimon, Yuki; Ogura, Atsushi; Nagata, Takahiro
Biblio. Info.Jpn. J. Appl. Phys., 64(5), 05SP25-1–05SP25-7, (2025)
URLhttps://iopscience.iop.org/article/10.35848/1347-4065/add0be
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2025.09.05
papers
A new paper on A mixed solvent enables efficient nylon recycling, including PA11, with >98% recovery of polymers and fillers while preserving properties for sustainable reuse has been published by TAMURA, Kenji et al.
Environmental Circulation Composite Material Group
TitleRoom‐Temperature Material Recycling/Upcycling of Polyamide Waste Enabled by Cosolvent‐Tunable Dissolution Kinetics
AuthorTanks, Jonathon; Tamura, Kenji
Biblio. Info.Angew. Chem.-Int. Edit., -1–-11, (2025)
URLhttps://mdr.nims.go.jp/datasets/910dc912-2433-4644-8521-017f93cc054a
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2025.09.05
papers
A new paper on A method for generally predicting chemical bonding at the metal–oxide interface including interface reaction and its implementation to a free software, InterChemBond has been published by YOSHITAKE, Michiko.
Nano Electronics Device Materials Group
TitleGeneral Prediction of Interface Chemical Bonding at Metal–Oxide Interface with the Interface Reaction Considered
AuthorYoshitake, Michiko
Biblio. Info.Materials, 18(13), 3096-1–3096-17, (2025)
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2025.09.04
papers
A new paper on Air-gap structures were formed on (001) β-Ga2O3 using crystallographic anisotropic HCl gas etching has been published by OSHIMA, Takayoshi et al.
Ultra-wide Bandgap Semiconductors Group
TitleFabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
AuthorOshima, Takayoshi; Oshima, Yuichi
Biblio. Info.AIP Adv., 15(5), 55207-1–55207-7, (2025)
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2025.09.04
papers
A new paper on A step-and-terrace structure was achieved on the (001) β-Ga2O3 surface using an aqueous tetramethylammonium hydroxide solution has been published by OSHIMA, Takayoshi.
Ultra-wide Bandgap Semiconductors Group
TitleStep-and-terrace surface formation on (001) β-Ga2O3 by wet etching using 2.38 wt% tetramethylammonium hydroxide (TMAH) lithographic developer
AuthorOshima, Takayoshi
Biblio. Info.Jpn. J. Appl. Phys., 64(8), 88001-1–88001-5, (2025)
URLhttps://iopscience.iop.org/article/10.35848/1347-4065/adf380
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2025.09.04
papers
A new paper on Normally-off boron-doped diamond MOSFETs are fabricated on a 150 nm-thick epitaxial layer with breakdown voltage over 1.7 kV has been published by LIU, Jiangwei et al.
Semiconductor Defect Design Group
TitleNormally-off boron-doped diamond MOSFETs with a breakdown voltage over 1.7 kV
AuthorLiu, J.; Teraji, T.; Da, B.; Koide, Y.
Biblio. Info.Appl. Phys. Lett., 127(4), 42601-1–42601-4, (2025)
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2025.09.04
papers
A new paper on polarity-controlled GaAs/Ge/GaAs heterostructures on the {111}-oriented substrates has been published by OHTAKE, Akihiro,HAYASHI, Yusuke et al.
Semiconductor Epitaxial Structures Group group
TitleControlled polarity inversion in GaAs/Ge/GaAs{111} heterostructures
AuthorOhtake, Akihiro; Hayashi, Yusuke
Biblio. Info.Appl. Phys. Lett., 126(20), 201601-1–201601-6, (2025)
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2025.09.04
papers
A new paper on the effect of ligands in perovskite structures: a collaborative study with Bandung Institute of Technology has been published by YAMASHITA, Yoshiyuki et al.
Nano Electronics Device Materials Group
TitleThe effect of surface ligands on the surface chemical states and photoluminescence characteristics in cesium lead bromide perovskite nanocrystals
AuthorAsharuddin, Muhammad; Hidayat, Rahmat; Nurunnizar, Adhita Asma; Nursam, Natalita Maulani; Yandri, Valdi Rizki; Arsyad, Waode Sukmawati; Suwardy, Joko; Indari, Efi Dwi; Yamashita, Yoshiyuki
Biblio. Info.RSC Adv., 15(37), 30727–30741, (2025)
URLhttps://pubs.rsc.org/en/content/articlelanding/2025/ra/d5ra05099e
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2025.09.04
papers
A new paper on Surface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group
TitleSurface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator
AuthorGu, Keyun; Zhang, Zilong; Huang, Jian; Koide, Yasuo; Koizumi, Satoshi; Liao, Meiyong
Biblio. Info.Appl. Phys. Lett., 126(22), 221901-1–221901-6, (2025)
URLhttps://pubs.aip.org/aip/apl/article/126/22/221901/3348240/Surface-desorption-properties-of-hydrogen
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2025.09.04
papers
A new paper on Ultra-High Sensitivity, Wide-Range Thermometry Based on High-Quality Microscale Diamond Resonators has been published by LIAO, Meiyong et al.
Ultra-wide Bandgap Semiconductors Group
TitleUltra-High Sensitivity, Wide-Range Thermometry Based on High-Quality Microscale Diamond Resonators
AuthorZhao, Wen; Chen, Guo; Teraji, Tokuyuki; Koide, Yasuo; Toda, Masaya; Liao, Meiyong
Biblio. Info.Adv. Mater., -1–-10, (2025)
URLhttps://advanced.onlinelibrary.wiley.com/doi/10.1002/adma.202502012
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2025.09.04
papers
A new paper on Reduction in dislocation density in α-gallium oxide by epitaxial lateral over growth using a stripe mask with ultra-narrow windows has been published by OSHIMA, Yuichi et al.
Ultra-wide Bandgap Semiconductors Group
TitleEpitaxial lateral overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
AuthorOshima, Yuichi; Shinohe, Takashi
Biblio. Info.Appl. Phys. Lett., 126(20), 202104-1–202104-5, (2025)
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2025.09.04
papers
A new paper on Effect of controlled surface arsenic stoichiometry of GaAs surfaces on the luminescence properties of embedded nanostructures after oxidation has been published by MANO, Takaaki , OHTAKE, Akihiro et al.
Semiconductor Epitaxial Structures Group
TitleEffects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation
AuthorMa, Zhao; Mano, Takaaki; Ohtake, Akihiro; Kuroda, Takashi
Biblio. Info.J. Appl. Phys., 137(24), 243102-1–243102-7, (2025)