Quantum Nanostructures Group
NIMS Photonic Materials Unit(PMU)

Original Papers

2015

  1. Voltage dependence of two-step photocurrent generation in quantum dot intermediate band solar cells
    M. Elborg, T. Noda, T. Mano, M. Jo, Y. Sakuma, K. Sakoda, and L. Han
    Sol. Energy Mater. Sol. Cells 134, 108 (2015)
  2. Extremely high- and low-density of Ga droplets on GaAs{111}A,B: surface-polarity dependence
    A. Ohtake, N. Ha, and T. Mano
    Cryst. Growth Des. 15, 485 (2015)

2014

  1. Visible-light photodecomposition of acetaldehyde by TiO2-coated gold nanocages: plasmon-mediated hot electron transport via defect states
    R. Kodiyath, M. Manikandan, L. Liu, G. V. Ramesh, S. Koyasu, M. Miyauchi, Y. Sakuma, T. Tanabe, T. Gunji, T. D. Dao, S. Ueda, T. Nagao, J. Ye, and H. Abe
    Chem. Commun. 50, 15553 (2014)
  2. Composition proling of GaAs/AlGaAs quantum dots grown by droplet epitaxy
    J. Bocquel, A. D. Giddings, T. Mano, T.J. Prosa, D. J. Larson, P. M. Koenraad
    Appl. Phys. Lett. 105, 153102 (2014)
  3. Vanishing fine-structure splittings in telecommunication-wavelength quantum dots grown on (111)A surfaces by droplet epitaxy
    X. Liu, N. Ha, H. Nakajima, T. Mano, T. Kuroda, B. Urbaszek, H. Kumano, I. Suemune, Y. Sakuma, and K. Sakoda
    Phys. Rev. B 90, 081301 (2014)
  4. Charge tuning in [111] grown GaAs droplet quantum dots
    L. Bouet, M. Vidal, T. Mano, N. Ha, T. Kuroda, M. V. Durnev, M. M. Glazov, E. L. Ivchenko, X. Marie, T. Amand, K. Sakoda, G. Wang, B. Urbaszek
    Appl. Phys. Lett. 105, 082111 (2014)
  5. Self-assembled growth of Ga droplets on GaAs (001): role of surface reconstructions
    A. Ohtake, T. Mano, A. Hagiwara, and J. Nakamura
    Cryst. Growth Des. 14, 3110 (2014)
  6. Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces
    N. Miyata, A. Ohtake, M. Ichikawa, T. Mori, and T. Yasuda
    Appl. Phys. Lett. 104, 232104 (2014)
  7. Growth of GaSb quantum dots on GaAs (111)A
    T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
    e-J. Surf. Sci. Nanotech. 12, 304 (2014)
  8. Growth of GaSb and AlSb quantum dots on high-index GaAs substrates
    T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
    Appl. Phys. Express. 7, 055502 (2014)
  9. GaAs/AlGaAs quantum wells with indirect-gap AlGaAs barriers for solar cell applications
    T. Noda, L. M. Otto, M. Elborg, M. Jo, T. Mano, T. Kawazu, L. Han, and H. Sakaki
    Appl. Phys. Lett. 104, 122102 (2014)
  10. Recombination dynamics of excitons bound to nitrogen isoelectronic centers in δ-doped GaP
    P. St-Jean, G. Ethier-Majcher, Y. Sakuma, and S. Francoeur
    Phys. Rev. B 89, 075308 (2014)
  11. Emission from a dipole-forbidden energy state in a GaAs quantum-ring induced by dressed photon
    T. Yatsui, W. Nomura, T. Mano, H. Miyazaki, K. Sakoda, T. Kawazue, M. Ohtsu
    Appl. Phys. A 115, 1 (2014)
  12. Heteroepitaxy of GaSb on Si(111) and fabrication of HfO2/GaSb metal-oxide-semiconductor capacitors
    A. Ohtake, T. Mano, N. Miyata, T. Mori, and T. Yasuda,
    Appl. Phys. Lett. 104, 032101 (2014)
  13. Optical anisotropy in type-II quantum wells on high-index substrates
    T. Kawazu
    J. Appl. Phys. 115, 053516 (2014)
  14. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP (111)A
    N. Ha, X. Liu, T. Mano, T. Kuroda, K. Mitsuishi, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, K. Sakoda 
    Appl. Phys. Lett. 104, 143106 (2014)
  15. Tight-binding analysis of the electronic states in AlAs with N isoelectronic impurities
    M. Jo, T. Mano, Y. Sakuma, K. Sakoda
    J. Appl. Phys. 115, 123501 (2014)
  16. Nuclear magnetization in gallium arsenide quantum dots at zero magnetic field
    G. Sallen, S. Kunz, T. Amand, L. Bouet, T. Kuroda, T. Mano, D. Paget, O. Krebs, X. Marie, K. Sakoda, B. Urbaszek,
    Nat. Commun. 5, 3268 (2014)

2013

  1. Fabrication of InAs nanoscale rings by droplet epitaxy
    T. Noda, M. Jo, T. Mano, T. Kawazu, and H. Sakaki
    J. Cryst. Growth 378, 529, (2013)
  2. Symmetric quantum dots as efficient sources of highly entangled photons: violation of Bell's inequality without spectral and temporal filtering
    T. Kuroda, T. Mano, N. Ha, H. Nakajima, H. Kumano, B. Urbaszek, M. Jo. M. Abbarchi, Y. Sakuma, K. Sakoda, I. Suemune, X. Marie, and T. Amand
    Phys. Rev. B 88, 041306 (2013)
  3. Photo-induced current in n-AlGaAs/GaAs heterojunction channels driven by local illumination at the edge regions of Hall bar
    T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
    Appl. Phys. Lett. 102, 252104 (2013)
  4. Single photon generation from an impurity center with well-defined emission energy in GaAs
    L. Zhang, M. Ikezawa, T. Mori, S. Umehara, Y. Sakuma, K. Sakoda, and Y. Masumoto
    Jpn. J. Appl. Phys. 52, 04CG11 (2013)
  5. Controlled incorporation of Mn in GaAs: Role of surface reconstructions
    A. Ohtake, A. Hagiwara, and J. Nakamura
    Phys. Rev. B 87, 165301 (2013)
  6. Visible single-photon emission from a nitrogen impurity center in AlAs
    M. Jo, T. Mano, T. Kuroda, Y. Sakuma, and K. Sakoda
    Appl. Phys. Lett. 102, 062107 (2013)
  7. Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots
    M. V. Durnev, M. M. Glazov, E. L. Ivchenko, M. Jo, T. Mano, T. Kuroda, K. Sakoda, S. Kunz, G. Sallen, L. Bouet, X. Marie, D. Lagarde, T. Amand, and B. Urbaszek
    Phys. Rev. B. 87, 085315 (2013)
  8. Size-dependent contact angle of Ga droplets on GaAs
    M. Jo, T. Mano, Y. Sakuma, K. Sakoda
    J. Cryst. Growth 378, 5 (2013)
  9. Growth of GaSb quantum dots on GaAs(311)A
    T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
    J. Cryst. Growth 378, 475 (2013)
  10. Post-growth annealing of GaSb quantum dots in GaAs formed by droplet epitaxy
    T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
    Phys. Stat. Sol. (c) 10, 1505 (2013)
  11. Impacts of ambipolar carrier escape on current-voltage characteristics in a type-I quantum-well solar cell
    M. Jo, Y. Ding, T. Noda, T. Mano, Y. Sakuma, K. Sakoda, K. Han, H. Sakaki
    Appl. Phys. Lett. 103, 061118 (2013)

2012

  1. Extension of absorption wavelength in GaAs/AlGaAs quantum dots with underlying quantum well for solar cell application
    M. Elborg, T. Noda, T. Mano, M. Jo, Y. Ding, and K. Sakoda
    Jpn. J. Appl. Phys. 51, 10ND14 (2012)
  2. Anomalous capacitance-voltage characteristics of GaAs/AlGaAs multiple quantum well solar cells
    T. Noda, T. Mano, M. Jo, Y. Ding, T. Kawazu, and H. Sakaki
    Jpn. J. Appl. Phys. 51, 10ND07 (2012)
  3. Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy
    T. Noda, T. Mano, M. Jo, T. Kawazu, and H. Sakaki
    Jpn. Appl. Phys. 112, 063510 (2012)
  4. Single-photon generation from a nitrogen impurity center in GaAs
    M. Ikeazawa, Y. Sakuma, L. Zhang, Y. Sone, T. Mori, T. Hamano, M. Watanabe, K. Sakoda, and Y. Masumoto
    Appl. Phys. Lett. 100, 042106 (2012)
  5. Cation-anion mixed-dimer structure of Al-induced (2x4) reconstruction on InAs(001)
    A. Ohtake
    Surf. Sci. 606, 1886 (2012)
  6. As-rich (2x2) surface reconstruction on GaAs(111)A
    A. Ohtake
    Surf. Sci. 606, 1864 (2012)
  7. Controlling anion composition at metal–insulator–semiconductor interfaces on III–V channels by plasma processing
    W. Jevasuwan, Y. Urabe, T. Maeda, N. Miyata, T. Yasuda, A. Ohtake, H. Yamada, M. Hata, S. Lee, T. Hoshii, M. Takenaka, and S. Takagi
    Jpn. J. Appl. Phys. 51, 065701 (2012)
  8. Effects of Sb/As interdiffusion on optical anisotropy of GaSb quantum dots in GaAs grown by droplet epitaxy
    T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
    Jpn. J. Appl. Phys. 51, 115201 (2012)
  9. Two-color photoexcitation in a GaNAs/AlGaAs quantum well solar cell
    M. Elborg, M. Jo, Y. Ding, T. Noda, T. Mano, and K. Sakoda
    Jpn. J. Appl. Phys. 51, 06FF15 (2012)
  10. Extremely high-density GaAs quantum dots grown by droplet epitaxy
    M. Jo, T. Mano, Y. Sakuma, and K. Sakoda
    Appl. Phys. Lett. 100, 212113 (2012)
  11. Geometrical impact on the optical polarization of droplet epitaxial quantum dots
    Y. Liao, C. Liao, C. Ku, Y. Chang, S. Cheng, M. Jo, T. Kuroda, T. Mano, M. Abbarchi, and K. Sakoda
    Phys. Rev. B 86, 115323 (2012)
  12. Self-limiting growth of hexagonal and triangular quantum dots on (111)A
    M. Jo, T. Mano, M. Abbarchi, T. Kuroda, Y. Sakuma, and K. Sakoda
    Cryst. Growth Des. 12, 1411 (2012)
  13. Bunched photon statistics of the spectrally diffusive photoluminescence of single self-assembled GaAs quantum dots
    M. Abbarchi, T. Kuroda, T. Mano, M. Guripli, and K. Sakoda
    Phys. Rev. B 86, 115330 (2012)
  14. Lateral variation of interface disorder in wetting layer on formation of InAs/InP quantum dots visualized by near-field imaging spectroscopy
    H. Tojinbara, M. Takahashi, N. Tsumori, D. Mizuno, R. Kubota, Y. Sakuma, T. Saiki
    J. Nanophoton. 6, 063521 (2012)
  15. Current-voltage characteristics of GaAs/AlGaAs coupled multiple quantum well solar cells
    Y. Ding, T. Noda, T. Mano, M. Jo, T. Kawazu, L. Han, and H. Sakaki
    Jpn. J. Appl. Phys. 51, 10ND08 (2012)

2011

  1. Effect of electronic structure on single-photon emission in InAs/InP quantum dot with quasi-resonant excitation
    T. Miyazawa, K. Takemoto, T. Nakaoka, T. Saito, S. Hirose, Y. Sakuma, N. Yokoyama, and Y. Arakawa
    Phys. Stat. Sol. (c) 8, 417 (2011)
  2. Experimental study of near-field light collection efficiency of aperture fiber probe at near-infrared wavelengths
    N. Tsumori, M. Takahashi, Y. Sakuma, and T. Saiki
    Appl. Opt. 50, 5710 (2011)
  3. The enhanced binding energy for biexcitons in InAs quantum dots
    Y. Masumoto, S. Yoshida, M. Ikezawa, S. Tomimoto, and Y. Sakuma
    Appl. Phys. Lett. 98, 061905 (2011)
  4. Atomic-scale characterization of the N incorporation on GaAs(001)
    Akihiro Ohtake
    J. Appl. Phys. 110, 033506-1 (2011)
  5. Polarity controlled InAs{111} films grown on Si(111)
    Akihiro Ohtake and Kazutaka Mitsuishi
    J. Vac. Sci. & Technol B 29, 031804 (2011)
  6. Self-assembled GaAs quantum dots coupled with GaAs wetting layer grown on GaAs (311)A by droplet epitaxy
    T. Mano, T. Noda, T. Kuroda, S. Sanguinetti, K. Sakoda
    Phys. Stat. Sol. (c) 8, 257 (2011)
  7. Lasing in ultra-narrow emission from GaAs quantum dots coupled with a two-dimensional layer
    M. Jo, T. Mano, and K. Sakoda
    Nanotechnology 22, 335201 (2011)
  8. Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy
    J. G. Keizer, M. Bozkurt, J. Bocquel, T. Mano, N, Noda, K. Sakoda, E. C. Clark, M. Bichler, G. Abstreiter, J. J. Finley, W. Lu, T. Rohel, H. Folliot, N. Bertru, and P. M. Koenraad
    J. Appl. Phys. 109, 102413 (2011)
  9. Self-assembly of GaAs quantum wires grown on (311)A substrates by droplet epitaxy
    M. Jo, J. G. Keizer, T. Mano, P. M. Koenraad, and K. Sakoda
    Appl. Phys. Express 4, 055501 (2011)
  10. Shape control of QDs studied by cross-sectional scanning tunneling microscopy
    J. G. Keizer, M. Bozkurt, J. Bocquel, P. M. Koenraad, T. Mano, N, Noda, K. Sakoda, E. C. Clark, M. Bichler, G. Abstreiter, J. J. Finley, W. Lu, T. Rohel, H. Folliot, and N. Bertru
    J. Korean Phys. Soc. 58, 1244 (2011)
  11. Effects of low-temperature capping on the optical properties of GaAs/AlGaAs quantum wells
    M. Jo, G. Duan, T. Mano, and K. Sakoda
    Nanoscale Res. Lett. 6, 76 (2011)
  12. Anisotropic diffusion of In atoms from an In droplet and formation of elliptically shaped InAs quantum dot clusters on (100) GaAs
    T. Noda, T. Mano, and H. Sakaki
    Cryst. Growth Des. 11, 726 (2011)
  13. Two-step formation of gallium droplets with high controllability of size and density
    M. Jo, T. Mano, and K. Sakoda
    Cryst. Growth Des. 11, 4674 (2011)
  14. Scanning Fabry-Perot interferometer with largely tuneable free spectral range for high resolution spectroscopy of single quantum dots
    M. Abbarchi, T. Kuroda, R. Duval, T. Mano, and K. Sakoda
    Rev. Sci. Inst. 82, 073103 (2011)
  15. Growth of GaSb and InSb quantum dots on GaAs (311)A by droplet epitaxy
    T. Kawazu, T. Noda, T. Mano, M. Ohmori, Y. Akiyama and H. Sakaki
    Phys. Stat. Sol. (c) 8, 275 (2011)
  16. Effects of interface grading on electronic states and optical transitions in GaSb type-II quantum dots in GaAs
    T. Kawazu and H. Sakaki
    Jpn. J. Appl. Phys. 50, 04DJ06 (2011)
  17. Self-assembled growth of GaSb type-II nanorods aligned along quasiperiodic multiatomic steps on vicinal (111)B GaAs
    T. Kawazu, Y. Akiyama, H. Sakaki
    J. Cryst. Growth 335, 1 (2011)
  18. Optical anisotropy of GaSb type-II nanorods on vicinal (111)B GaAs
    T. Kawazu, Y. Akiyama, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
    Appl. Phys. Lett. 99, 231901 (2011)
  19. Structural atomic-scale analysis of GaAs/AlGaAs quantum wires and quantum dots grown by droplet epitaxy on a (311)A substrate
    J. G. Keizer, M. Jo, T. Mano, T. Noda, K. Sakoda, and P. M. Koenraad,
    Appl. Phys. Lett. 98, 193112 (2011)
  20. Dark-bright mixing of interband transitions in symmetric semiconductor quantum dots
    G. Sallen, B. Urbaszek, M. M. Glazov, E. L. Ivchenko, T. Kuroda, T. Mano, S. Kunz, M. Abbarchi, K. Sakoda, D. Lagarde, A. Balocchi, X. Marie, and T. Amand
    Phys. Rev. Lett. 107, 166604 (2011)
  21. Photocurrent characteristics in p-i-n diode with built in coupled or uncoupled multi-quantum wells
    T. Noda, T. Mano, K. Sakoda, and H. Sakaki
    Phys. Stat. Sol. (c) 8, 349 (2011)
  22. Fabrication of GaNAs/AlGaAs heterostructures with large band offset using periodic growth interruption
    T. Mano, M. Jo, K. Mitsuishi, M. Elborg, Y. Sugimoto, T. Noda, Y. Sakuma, and K. Sakoda
    Appl. Phys. Express 4, 125001 (2011)
  23. Impact of cation surface termination on the electrical characteristics of HfO2/InGaAs(001) metal-oxide-semiconductor capacitors
    A. Ohtake, N. Miyata, Y. Urabe, and T. Yasuda
    Jpn. J. Appl. Phys. 50, 10PD01 (2011)

2010

  1. Effects of antimony flux on morphology and photoluminescence spectra of GaSb quantum dots formed on GaAs by droplet epitaxy
    T. Kawazu, T. Noda, T. Mano, M. Jo, and H. Sakaki
    J. Nonlinear Opt. Phys. & Mat. 19, 819 (2010)
  2. One-and two-dimensional spectral diffusion of type-II excitons in InP/InAs/InP core-multishell nanowires
    Y. Masumoto, K. Goto, S. Yoshida, Y. Sakuma, P. Mohan, J. Motohisa, and T. Fukui
    Phys. Rev. B 82, 075313 (2010)
  3. Transmission experiment of quantum keys over 50km using high-performance quantum-dot single-photon source at 1.5μm wavelength
    K. Takemoto, Y. Nambu, T. Miyazawa, K. Wakui, S. Hirose, T. Usuki, M. Takatsu, N. Yokoyama, K. Yoshino, A. Tomita, S. Yorozu, Y. Sakuma, and Y. Arakawa
    Appl. Phys. Express 3, 092802 (2010)
  4. Effect of interface oxidation on the electrical characteristics of HfO2/ultrathin-epitaxial-Ge/GaAs(100) structures
    N. Miyata, Y. Urabe, T. Yasuda, and A. Ohtake
    Appl. Phys. Express 3, 035701 (2010)
  5. Magneto-optical properties of excitonic complexes in GaAs self-assembled quantum dots
    M. Abbarchi, T. Kuroda, T. Mano, K. Sakoda, M. Gurioli
    Phys. Rev. B 81, 35334 (2010)
  6. Atomic scale analysis of self-assembled GaAs/AlGaAs quantum dots grown by droplet epitaxy
    J. Keizer, J. Bocquel, P. M. Koenraad, T. Mano, T. Noda, and K. Sakoda
    Appl. Phys. Lett. 96, 62101 (2010)
  7. Poissonian excitonic population of single QDs
    M. Abbarchi, T. Kuroda, C. Mastrandrea, A. Vinattieri, T. Mano, K. Sakoda, and M. Gurioli
    Physica E 42, 884 (2010)
  8. Fine structure splitting of quantum dot excitons: Role of geometry and environment
    M. Abbarchi, T. Kuroda, C. Mastrandrea, A. Vinattieri, S. Sanguinetti, T. Mano, K. Sakoda, and M. Gurioli
    Physica E 42, 881 (2010)
  9. Unstrained GaAs quantum dashes grown on GaAs(001) substrates by droplet epitaxy
    M. Jo, T. Mano, and K. Sakoda
    Appl. Phys. Express 3, 45502 (2010)
  10. Self-assembly of symmetric GaAs quantum dots on (111)A substrates: Suppression of fine-structure splitting
    T. Mano. M. Abbarchi, T. Kuroda, B. Mcskimming, A. Ohtake, K. Mitsuishi, and K. Sakoda
    Appl. Phys. Express 3, 65203 (2010)
  11. Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer
    M. Jo, T. Mano, and K. Sakoda
    J. Appl. Phys. 108, 83505 (2010)
  12. Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots
    T. Belhadj, T. Amand, A. Kunold, C.-M. Simon, T. Kuroda, M. Abbarchi, T. Mano, K. Sakoda, S. Kunz, X. Marie, and B. Urbaszek
    Appl. Phys. Lett. 97, 51111 (2010)
  13. Energy renormalization of exciton complexes in GaAs quantum dots
    M. Abbarchi, T. Kuroda, T. Mano, K. Sakoda, C. A. Mastrandrea, A. Vinattieri, M. Gurioli, and T. Tsuchiya
    Phys. Rev. B 82, 201301 (2010)
  14. Thermal annealing of GaSb quantum dots in GaAs formed by droplet epitaxy
    T. Kawazu, T.Mano, T. Noda, and H. Sakaki
    Physica E 42, 2742 (2010)
  15. Temperature dependence of magneto-capacitance in n-AlGaAs/GaAs selectively doped heterojunction with InGaAs quantum dots
    T. Kawazu and H. Sakaki
    Jpn. J. Appl. Phys, 49, 09025 (2010)
  16. Fabrication of a GaAs/AlGaAs lattice-matched quantum dot solar cell
    T. Noda, T. Mano, M. Elborg, K. Mitsuishi, and K. Sakoda
    J. Nonlinear Opt. Phys. & Mat. 19, 681 (2010)
  17. Distribution of exciton emission linewidth observed for GaAs quantum dots grown by droplet epitaxy
    K. Kuroda, T. Kuroda, K. Watanabe, T. Mano, G. Kido, N. Koguchi, and K. Sakoda
    J. Luminescence 130, 2390 (2010)

2009

  1. Low-frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes
    Y. Irokawa, N. Matsuki, M. Sumiya, Y. Sakuma, T. Sekiguchi, T. Chikyo, Y. Sumida, and Y. Nakano
    Phys. Stat. Sol. ( RRL) 3, 266 (2009)
  2. Hydrogen effect on near-atmospheric nitrogen plasma assisted chemical vapor deposition of GaN film growth
    T. Nagata, M. Haemori, Y. Sakuma, T. Chikyo, J. Anzai, and T. Uehara
    J. Appl. Phys. 105, 066106-1 (2009)
  3. Variable stoichiometry in Sb-induced (2x4) reconstructions on GaAs(001)
    A. Ohtake, M. Hirayama, J. Nakamura, A. Natori
    Phys. Rev. B 80, 235329 (2009)
  4. Bunching visibility for correlated photons from single GaAs quantum dots
    T. Kuroda, T. Belhadj, M. Abbarchi, C. Mastrandrea, M. Gurioli, T. Mano, N. Ikeda, Y. Sugimoto, K. Asakawa, N. Koguchi, K. Sakoda, B. Urbaszek, T. Amand, and X. Marie
    Phys Rev. B 79, 35330 (2009)
  5. Optical orientation of electron and nuclear spins in strain free GaAs quantum dots grown by droplet epitaxy
    T. Belhadj, T. Kuroda, C. Simon, T. Amand, T. Mano, K. Sakoda, N. Koguchi, X. Marie, and B. Urbaszek
    Phys. Stat. Sol. (b) 246, 762 (2009)
  6. Magneto photoluminescence in droplet epitaxial GaAs quantum rings
    T. Kuroda, T. Belhadj, T. Mano, B. Urbaszek, T. Amand, X. Marie, S. Sanguinetti, K. Sakoda, and N. Koguchi
    Phys. Stat. Sol. (b) 246, 861 (2009)
  7. High resolution spectroscopy of self-assembled single GaAs/AlGaAs quantum dots
    M. Abbarchi, C. Mastrandrea, T. Kuroda, A. Vinattieri, T. Mano, N. Koguchi, K. Sakoda, and M. Gurioli
    Phys. Stat. Sol. (c) 6, 890 (2009)
  8. Line broadening of excitonic complexes in self-assembled GaAs/AlGaAs single quantum dots
    M. Abbarchi, C. Mastrandrea, T. Kuroda, A. Vinattieri, T. Mano, N. Koguchi, K. Sakoda, and M. Gurioli
    Phys. Stat. Sol. (c) 6, 886 (2009)
  9. Quantum dots to double concentric quantum ring structures transition
    S. Bietti, C. Somaschini, M. Abbarchi, N. Koguchi, S. Sanguinetti, E. Poliani, M. Bonfanti, M. Gurioli, A. Vinattieri, T. Kuroda, T. Mano, and S. Sakoda
    Phys. Stat. Sol. (c) 6, 928 (2009)
  10. Ultra-narrow emission from single GaAs self-assembled quantum dots grown by droplet epitaxy
    T. Mano, M. Abbarchi, T. Kuroda, C. A. Mastrandrea, A. Vinattieri, S. Sanguinetti, K. Sakoda, and M. Gurioli
    Nanotechnology 20, 395601 (2009)
  11. Poissonian statistics of excitonic complexes in quantum dots
    M. Abbarchi, C. Mastrandrea, T. Kuroda, T. Mano, A. Vinattieri, K. Sakoda, and M. Gurioli
    J. Appl Phys. 106, 53504 (2009)
  12. Electronic structure of GaAs/AlGaAs quantum double rings in lateral electric field
    Y. Yao, T. Ochiai, T. Mano, T. Kuroda, T. Noda, N. Koguchi, and K. Sakoda
    Chinese Optics Lett. 7, 882 (2009)
  13. Purcell effect of GaAs quantum dots by photonic crystal microcavities
    K. Sakoda, T. Kuroda, N. Ikeda, T. Mano, Y. Sugimoto, T. Ochiai, K. Kuroda, S. Ohkouchi, N. Koguchi, and K. Asakawa
    Chinese Optics Lett. 7, 879 (2009)
  14. Observation of a new isoelectronic trap luminescence in nitorgen δ-doped GaP
    M. Ikezawa, Y. Sakuma, M. Watanabe, Y. Masumoto
    Jpn. J. Appl. Phys. 48, 04C158 (2009)
  15. Single NN pair luminescence and single photon generation in nitrogen δ-doped GaP
    M. Ikezawa, Y. Sakuma, M. Watanabe, Y. Masumoto
    Phys. Stat. Sol. (c) 6, 362 (2009)
  16. Anisotropic kinetics on growing Ge(001) surfaces
    A. Ohtake, T. Yasuda, and N. Miyata
    Surf. Sci. 603, 826 (2009)
  17. High-density GaAs/AlGaAs quantum dots formed on GaAs (311)A substrates by droplet epitaxy
    T. Mano, T. Kuroda, K. Mitsuishi, T. Noda, and K. Sakoda
    J. Cryst. Growth 311, 1828 (2009)
  18. Ordering of GaAs quantum dots by droplet epitaxy
    T. Mano, T. Kuroda, T. Noda, and K. Sakoda
    Phys. Stat. Sol. (b) 246, 729 (2009)
  19. Photon antibunching in double quantum ring structures
    M. Abbarchi, C. Mastrandrea, A. Vinattieri, S. Sanguinetti, T. Mano, T. Kuroda, N. Koguchi, K. Sakoda, and M. Gurioli
    Phys. Rev. B 79, 85308 (2009)
  20. Two different growth modes of GaSb dots on GaAs (100) by droplet epitaxy
    T. Kawazu, T. Mano, T. Noda, and H. Sakaki
    J. Cryst. Growth 311, 2255 (2009)
  21. Optical properties of GaSb/GaAs type-ІІ quantum dots grown by droplet epitaxy
    T. Kawazu, T. Mano, T. Noda, and H. Sakaki
    Appl. Phys. Lett. 94, 81911 (2009)
  22. Growth of GaSb dots on GaAs (100) by droplet epitaxy
    T. Kawazu, T. Mano, T. Noda, Y. Akiyama, and H. Sakaki
    Phys. Stat. Sol. (b) 246, 733 (2009)
  23. Spontaneous formation of a cluster of InAs dots along a ring-like zone on GaAs (100) by droplet epitaxy
    T. Noda, T. Mano, T. Kuroda, K. Sakoda, and H. Sakaki
    J. Cryst. Growth, 311, 1836 (2009)

2008

  1. Optically monitored nuclear spin dynamics in individual GaAs quantum dots grown by droplet epitaxy
    T. Belhadj, T. Kuroda, C. M. Simon, T. Amand, T. Mano, K. Sakoda, N. Koguchi, X. Marie, and B. Urbaszek
    Phys. Rev. B 78, 205325 (2008)
  2. Spectral diffusion and line broadening in single self-assembled GaAs/AlGaAs quantum dot photoluminescence
    M. Abbarchi, F. Troiani, C. Mastrandrea, G. Goldoni, T. Kuroda, T. Mano, K. Sakoda, N. Koguchi, S. Sanguinetti, A. Vinattieri, and M. Gurioli
    Appl. Phys. Lett. 93, 162101 (2008)
  3. Acceleration and suppression of photoemission of GaAs quantum dots embedded in photonic crystal microcavities
    T. Kuroda, N. Ikeda, T. Mano, Y. Sugimoto, T. Ochiai, K. Kuroda, S. Ohkouchi, N. Koguchi, K. Sakoda, and K. Asakawa
    Appl. Phys. Lett. 93, 111103 (2008)
  4. Exciton fine structure in strain-free GaAs/Al0.3Ga0.7As quantum dots: extrinsic effects
    M. Abbarchi, C. A. Mastrandrea, T. Kuroda, T. Mano, K. Sakoda, N. Koguchi, S. Sanguinetti, A. Vinattieri, and M. Gurioli
    Phys. Rev. B 78, 125321 (2008)
  5. Photon correlation in GaAs self-assembled quantum dots
    T. Kuroda, M. Abbarchi, T. Mano, K. Watanabe, M. Yamagiwa, K. Kuroda, K. Sakoda, G. Kido, N, Koguchi, C. Mastrandrea, L. Cavigli, M. Gurioli, Y. Ogawa, and F. Minami
    Appl. Phys. Express 1, 042001 (2008)
  6. Magneto-photoluminescence study in single GaAs/AlGaAs self-assembled quantum dot
    M. Abbarchi, T. Kuroda, T. Mano, K. Sakoda, G. Kido, N. Koguchi, L. Cavigli, M. Gurioli, and S. Sanguinetti
    Physica E 40, 1982 (2008)
  7. Telecom single-photon source with horn structure
    K. Takemoto, S. Hirose, M. Takatsu, N. Yokoyama, Y. Sakuma, T. Usuki, T. Miyazawa, and Y. Arakawa
    Phys. Stat. Sol. (c) 5, 2699 (2008)
  8. Effects of surface states on hydrogen sensing performance of Pt-GaN Schottky diodes
    Y. Irokawa, Y. Sakuma, T. Seikiguchi
    Phys. Stat. Sol. (c) 5, 2985 (2008)
  9. Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using an AuSi alloyed metal source
    T. Yo, H. Tanaka, K. Koreyama, T. Nagata, Y. Sakuma, K. Nakajima, T. Chikyo, J. Yanagisawa, A. Sakai,
    Jpn. J. Appl. Phys. 47, 5018 (2008)
  10. Isoelectronic nitrogen δ-doping and single-photon emission from individual nitrogen pairs
    Y. Sakuma, M. Ikezawa, M. Watanabe, Y. Masumoto
    J. Cryst. Growth 310, 4790 (2008)
  11. InN growth by plasma-assisted molecular beam epitaxy with indium monolayer insertion
    Yz. Yao, T. Sekiguchi, Y. Sakuma, N. Ohashi, Y. Adachi, H. Okuno, M. Takeguchi,
    Cryst. Growth Des. 8, 1073 (2008)
  12. Effect of annealing on implanted Ga of diamond-like carbon thin films
    T. Nagata, Y. Sakuma, M. Haemori, K. Nakajima, R. Kometani, K. Kanda, S. Matsui, T. Chikyo
    Jpn. J. Appl. Phys. 4, 9010 (2008)
  13. Characterization of AlInGaN/GaN heterointerface by HAADF-STEM and electron holography
    M. Takeguchi, H. Okuno, Y. Irokawa, Y. Sakuma, K. Furuya
    Microsc. and Microanal. 14, 438 (2008)
  14. Influence of initial surface reconstruction on the interface structure of HfO2/GaAs(001)
    T. Yasuda, N. Miyata, and A. Ohtake,
    Appl. Surf. Sci. 254, 7565 (2008)
  15. Surface reconstructions of GaAs(001)
    A. Ohtake
    Surf. Sci. Rep. 63, 295 (2008)
  16. Ge-induced (1x2) reconstruction on GaAs(001): A precursor to As segregation
    A. Ohtake, J. Nara, T. Yasuda, and N. Miyata
    Phys. Rev. B 77, 195309 (2008)
  17. Rapid thermal annealing effects on self-assembled quantum dot and quantum ring structures
    S. Sanguinetti, T. Mano, A. Gerosa, C. Somaschini, S. Bietti, N. Koguchi, E. Grilli, M. Guzzi, M. Gurioli, and M. Abbarchi
    J. Appl. Phys. 104, 113519 (2008)
  18. GaAs/AlGaAs quantum dot laser fabricated on GaAs (311)A substrate by droplet epitaxy
    T. Mano, T. Kuroda, K. Mitsuishi, Y. Nakayama, T. Noda, and K. Sakoda
    Appl. Phys. Lett. 93, 203110 (2008)
  19. Structural properties of GaAs nanostructures formed by a supply of intense As4 flux in droplet epitaxy
    T. Mano, K. Mitsuishi, Y. Nakayama, T. Noda, K. Sakoda
    Appl. Surf. Sci. 254, 7770 (2008)
  20. Phonon sideband recombination kinetics in single quantum dots
    M. Abbarchi, M. Gurioli, A. Vinattieri, S. Sanguinetti, M. Bonfanti, T. Mano, K. Watanabe, T. Kuroda, and N. Koguchi
    J. Appl. Phys. 104, 23504 (2008)
  21. Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array
    D. Sreenivasan, J. E. M. Haverkort, O. Ipek, B. Martinez-Vazquez, T. J. Eijkemans, T. Mano, and R. Nötzel
    Physica E 40, 1879 (2008)
  22. Carrier dynamics in individual concentric quantum rings: Photoluminescence measurements
    S. Sanguinetti, M. Abbarchi, A. Vinattieri, M. Zamfirescu, M. Gurioli, T. Mano, T. Kuroda, and N. Koguchi
    Phys. Rev. B 77, 125404 (2008)
  23. Electron scatterings in selectively doped n-AlGaAs/GaAs heterojunctions with high density InAlAs anti dots
    T. Kawazu and H. Sakaki
    Appl. Phys. Lett. 93, 132116 (2008)
  24. Magnetocapacitance measurement of selectively doped n-AlGaAs/GaAs heterojunction with InGaAs quantum dots
    T. Kawazu and H. Sakaki
    Jpn. J. Appl. Phys.47, 3763 (2008)
  25. Magneto-capacitance study of an n-AlGaAs/GaAs heterojunction supporting a sizable DC current
    T. Kawazu and H. Sakaki
    Phys. Stat. Sol. (c) 5, 2879 (2008)
  26. Fabrication of a complex InAs ring-and-dot structure by droplet epitaxy
    T. Noda and T. Mano
    Appl. Surf. Sci. 254, 7777 (2008)

2007

  1. Structure of nanowires fabricated by electron beam induced deposition to connect self-assembled quantum structures
    K. Mitsuishi, T. Noda, T. Mano, M.Tanaka, K. Furuya, N. Koguchi
    Jpn. J. Appl. Phys. 46, 6277 (2007)
  2. Final-state readout of exciton qubits by observing resonantly excited photoluminescence in quantum dots
    K. Kuroda, T. Kuroda, K. Watanabe, T. Mano, K. Sakoda, and N. Koguchi
    Appl. Phys. Lett. 90, 051909 (2007)
  3. An optical horn structure for single-photon source using quantum dots at telecommunication wavelength
    K. Takemoto, M. Takatsu, S. Hirose, N. Yokoyama, Y. Sakuma, T. Usuki, T. Miyazawa, and Y. Arakawa
    J. Appl. Phys. 101, 081720 (2007)
  4. Single photon emission from individual nitrogen pairs in GaP
    M. Ikezawa, Y. Sakuma, and Y. Masumoto
    Jpn. J. Appl. Phys. 46, L871 (2007)
  5. Scanning tunneling microscope study of interfacial structure of InAs quantum dots on InP(001) grown by a double-cap method
    Y. Akanuma, I. Yamakawa, Y. Sakuma, T. Usuki, and A. Nakamura
    Appl. Phys. Lett. 90, 093112 (2007)
  6. Effect of dielectrics on hydrogen detection sensitivity of metal–insulator–semiconductor Pt–GaN diodes
    Y. Irokawa, Y. Sakuma, T. Seikiguchi
    Jpn. J. Appl. Phys. 46, 7714 (2007)
  7. GaN film fabrication by near-atmospheric plasma-assisted chemical vapor deposition
    T. Nagata, Y. Sakuma, T. Uehara, T. Chikyo
    Jpn. J. Appl. Phys. 46, L43 (2007)
  8. Radiative recombination of excitons in disk-shaped InAs/InP quantum dots
    S. Tomimoto, A. Kurokawa, Y. Sakuma, T. Usuki, and Y. Masumoto
    Phys. Rev. B 76, 205317 (2007)
  9. The influence of indium monolayer insertion on the InN epifilm grown by plasma-assisted molecular beam epitaxy
    Yz. Yao, T. Sekiguchi, Y. Sakuma, N. Ohashi
    J. Cryst. Growth 301-302, 521 (2007)
  10. Structure and composition of Ga-rich (6x6) reconstructions on GaAs(001)
    A. Ohtake
    Phys. Rev. B 75, 153302 (2007)
  11. TEM observations of nanowires deposited on a self-assembled InAs quantum-ring structure
    K. Mitsuishi, T. Noda, T. Mano, M. Tanaka, K. Furuya, N. Koguchi
    Jpn. J. Appl. Phys 46, 6277 (2007)
  12. Formation of InGaAs quantum disks using droplet lithography
    T. Mano, T. Kuroda, T. Noda, K. Sakoda, and N. Koguchi
    Jpn. J. Appl. Phys. 46, L736 (2007)
  13. Deterministic nanometer-sized lead wiring by atomic force microscopy lithography
    M. Yamagiwa, M. Kawabe, T. Mano, T. Noda, K. Takehana, and N. Koguchi
    Jpn. J. Appl. Phys. 46, 2658 (2007)
  14. Ring-shaped GaAs quantum dot laser grown by droplet epitaxy: Effects of post-growth annealing on structural and optical properties
    T. Mano, T. Kuroda, K. Mitsuishi, M. Yamagiwa, X. J. Guo, K. Furuya, K. Sakoda, and N. Koguchi
    J. Cryst. Growth 301, 740 (2007)
  15. High-resolution core-level photoemission study on GaAs(111)B surfaces
    K. Nakamura, T. Mano, M. Oshima, H. W. Yeom, and K. Ono
    J. Appl. Phys. 101, 43516 (2007)
  16. Fabrication of submicron GaAs/AlAs double-barrier resonant tunneling diodes by wet etching with In droplets as mask
    T. Noda, K. Mitsuishi, and T. Mano
    Jpn. J. Appl. Phys. 46, L994 (2007)

2006

  1. Lasing in GaAs/AlGaAs self-assembled quantum dots
    T.Mano, T. Kuroda, M. Yamagiwa, G. Kido, K. Sakoda, and N. Koguchi
    Appl. Phys. Lett. 89, 183102 (2006)
  2. Excitonic transitions in semiconductor concentric quantum double rings
    T. Kuroda, T. Mano, T. Ochiai, S. Sanguinetti, T. Noda, K. Kuroda, K. Sakoda, G. Kido, and N. Koguchi
    Physica E 32, 46 (2006)
  3. Single-photon generator for optical telecommunication wavelength
    T. Usuki, Y. Sakuma, S. Hirose, K. Takemoto, N. Yokoyama, T. Miyazawa, M. Takatsu, and Y. Arakawa
    J. Phys. Conference Series 38, 140 (2006)
  4. Site-controlled quantum dots fabricated using an atomic-force microscope assisted technique
    H. Z. Song, T. Usuki, T. Ohshima, Y. Sakuma, M. Kawabe, Y. Okada, K. Takemoto, T. Miyazawa, S. Hirose, Y. Nakata, M. Takatsu, N. Yokoyama
    Nanoscale Res. Lett. 1, 160 (2006)
  5. Three-Dimensional GaN Nano Structure Fabrication by Focused Ion Beam Chemical Vapor Deposition
    T. Nagata, A. Parhat, Y. Yamauchi, Y. Sakuma, T. Sekiguchi, and T. Chikyo,
    Nucl. Instr. Meth. B 242, 250 (2006)
  6. Cathodoluminescence characterization of GaN quantum dots grown on 6H-SiC substrate by metal-organic chemical vapor deposition
    Yz. Yao, T. Sekiguchi, Y. Sakuma, M. Miyamura and Y. Arakawa
    Scripta Mater. 55, 679 (2006)
  7. Structure of the As-deficient phase on GaAs(001)-(2x4)
    A. Ohtake
    Phys. Rev. B 74, 165322 (2006)
  8. Self-assembled growth of ordered GaAs nanostructures
    A. Ohtake and N. Koguchi
    Appl. Phys. Lett. 89, 083108 (2006)
  9. Ga-rich GaAs(001) surface from ab-initio calculations: Atomic structure of the (4x6) and (6x6) reconstructions
    K. Seino, W. G. Schmidt, and A. Ohtake
    Phys. Rev. B 73, 035317 (2006)
  10. Atomic structure of Ga nanoclusters on Si(111)-(7x7)
    A. Ohtake
    Phys. Rev. B 73, 033301 (2006)
  11. Circular dichroism in InAs/GaAs quantum dots: Confinement-induced magnetism
    E. W. Bogaart, J. E. M. Haverkort, T. Mano, T. van Lippen, G. J. Hamhuis, and R. Nötzel
    Phys. Rev. B 74, 153307 (2006)
  12. Coupled quantum nanostructures formed by droplet epitaxy
    T. Mano, T. Noda, M. Yamagiwa, and N. Koguchi
    Thin Solid Films 515, 531 (2006)
  13. Self-assembly of laterally aligned GaAs quantum dot pairs
    M. Yamagiwa, T. Mano, T. Kuroda, T. Tateno, K. Sakoda, N. Koguchi, and F. Minami
    Appl. Phys. Lett. 89, 113115 (2006)
  14. Carrier capture and relaxation through a continuum background in InAs quantum dots
    E. W. Bogaart, J. E. M. Haverkort, T. Mano, R. Nötzel, and J. H. Wolter
    Physica E 32, 163 (2006)
  15. Fabrication of Al nanoparticles and their electrical properties studied by capacitance-voltage measure
    T. Noda, T. Mano, and N. Koguchi
    Appl. Surf. Sci. 252, 5408 (2006)

2005

  1. Optical transitions in quantum ring complexes
    T. Kuroda, T. Mano, T. Ochiai, S. Sanguinetti, K. Sakoda, G. Kido, and N. Koguchi
    Phys. Rev. B 72 , 205301 (2005)
  2. GaN nanostructure fabrication by focused-ion-beam-assisted chemical vapor deposition
    T. Nagata, A. Parhat, Y. Sakuma, T. Sekiguchi, and T. Chikyo
    Appl. Phys. Lett. 87, 013103 (2005)
  3. Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2
    Y. Xiaoli, T. Sekiguchi, J. Niitsuma, Y. Sakuma, S. Itoh
    Appl. Phys. Lett. 86, 162102 (2005)
  4. Site-controlled photoluminescence at telecommunication wavelength from InAs/InP quantum dots
    H. Z. Song, T. Usuki, S. Hirose, K. Takemoto, Y. Nakata, N. Yokoyama, Y. Sakuma
    Appl. Phys. Lett. 86, 113118 (2005)
  5. Single-photon generation in the 1.55μm optical-fiber band from an InAs/InP quantum dot
    T. Miyazawa, K. Takemoto, Y. Sakuma, S. Hirose, T. Usuki, N. Yokoyama, M Takatsu, Y. Arakawa
    Jpn. J. Appl. Phys. 44, L620 (2005)
  6. Role of thin cap layer and anion exchange reaction on structural and optical properties of InAs quantum dots on InP (001)
    Y. Sakuma, M. Takeguchi, K. Takemoto, S. Hirose, T. Usuki, N. Yokoyama
    J. Vac. Sci. Technol. Vol. B 23, 1741 (2005)
  7. Controlling emission wavelength from InAs self-assembled quantum dots on InP (001) during MOCVD
    Y. Sakuma, K. Takemoto, S. Hirose, T. Usuki, N. Yokoyama
    Physica E 26, 81 (2005)
  8. Single InAs/InP quantum dot spectroscopy in 1.3-1.55μm telecommunication band
    K. Takemoto, Y. Sakuma, S. Hirose, T. Usuki, N. Yokoyama, T. Miyazawa, M. Takatsu, and Y. Arakawa
    Physica E 26, 185 (2005)
  9. Role of the continuum background for carrier relaxation in InAs quantum dots
    E. W. Bogaart, J. E. M. Haverkort, T. Mano, T. van Lippen, R. Nötzel, and J. H. Wolter
    Phys. Rev. B 72, 195301 (2005)
  10. Quantum dot decoherence measured by ensemble photoluminescence
    M. Gurioli, S. Sanguinetti, T. Mano, N. Koguchi, and R. Nötzel
    J. Appl. Phys. 98, 103527 (2005)
  11. Dichroic reflection of InAs/GaAs quantum dots
    E. W. Bogaart, J. E. M. Haverkort, T. J.. Eijkemans, T. Mano, R. Nötzel, and J. H. Wolter
    J. Appl. Phys. 98, 73519 (2005)
  12. Temperature-dependent photoluminescence of self-assembled (In,Ga)As quantum dots on GaAs (100): Carrier redistribution through low-energy continuous states
    T. Mano, R. Nötzel, Q. Gong, T. van Lippen, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter
    Jpn. J. Appl. Phys. 44, 6829 (2005)
  13. Nanometer-scale GaAs ring structure grown by droplet epitaxy
    T. Mano and N. Koguchi
    J. Cryst. Growth 278, 108 (2005)
  14. Self-assembly of concentric quantum double rings
    T. Mano, T. Kuroda, S. Sanuginetti, T. Ochiai, T. Tateno, J. S. Kim, T. Noda, M. Kawabe, K. Sakoda, G. Kido, and N. Koguchi
    Nano Lett. 5, 425 (2005)
  15. Complex quantum dot arrays formed by combination of self-organized anisotropic strain engineering and step engineering on shallow patterned substrates
    T. Mano, R. Nötzel, D. Zhou, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter
    J. Appl. Phys. 97, 14304 (2005)