Studying and developing new magnetic materials and spin-based functionalities.

 The focus of our research is to develop materials and devices that take advantage of electron's spin. Electrons posses charge and spin. Modern semiconductor technologies utilize electron's "charge" to process and store information. On the other hand, magnetism arise from the collective interaction of electron's spin. Spintronics combines the two handles and provides new paradigms for functional information processing and storing devices.
 Our group works on all aspects of Spintronics research: physical science, materials engineering, device processing and characterization. We study a wide range of materials including metals, semiconductors and insulators, inorganic and organic materials including graphene, and heterostructures to develop novel spintronics devices.

  • NIMS NOW 2019 - Vol.17 "Become a materials scientist! NIMS offers attractive graduate programs"

  • What's New!!

    Dr. Hiroaki Sukegawa was inaugurated as a group leader of the Spintronics Group.
    A paper entitled "Enhanced tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) magnetic tunnel junctions" published in Applied Physics Letters by T. Scheike, a previous post-doc researcher and H. Sukegawa, Principal Researcher in Spintronics Group, et al. has been selected as an Editor's Pick of Applied Physics Letters.(Open access)
  •   2021.12.21
    A review paper by Dr. Seiji Mitani and Dr. Hiroaki Sukegawa et al. has been selected as "STAM Altmetrics Award 2021".
  • Sci. Technol. Adv. Mater. Vol. 22 (2021) pp. 235-271
  •   2021.04.01
    Dr. Seiji Mitani was inaugurated as Director of the center.

    A paper by Dr. Thomas Scheike et al. published Appl. Phys. Lett. has been selected as a Featured Article and published as a news article of American Institute of Physics research highlight “Scilight.
  • Thomas Scheike et al., "Exceeding 400% tunnel magnetoresistance at room temperature in epitaxial Fe/MgO/Fe(001) spin-valve-type magnetic tunnel junctions", Appl. Phys. Lett. 118, 042411 (2021).
  • See more.



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