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Press ReleasePress Release 2011

Success in Clarifying Behavior of Impurities in Silicon Nanowire with Diameter of 1/50,000mm

-Toward Realization of Next-Generation Type Transistors and Nanowire Photovoltaic Cell Materials-

4 Feb, 2011

A research group led by Dr. Naoki Fukata and a group under Prof. Koichi Murakami of the University of Tsukuba succeeded in non-destructive, non-contact detection of the states of impurities introduced as dopants for carrier control in silicon nanowires (diameter: <20nm). The research groups also succeeded in clarifying the behavior of those impurities.

This work is a step toward the realization of next-generation transistors. The assessment method is also considered a promising approach for assessment of photovoltaic cells.

fig. 1

Figure 1. Schematic of (a) segregation behavios of dopant atoms in Si nanowires and (b) application to the next-generation vertical-type nanowire-transistor and core-shell nanowire solar cells.

Further information


Naoki Fukata1, 2, Shinya Ishida3, Shigeki Yokono3, Ryo Takiguchi3, Jun Chen4, Takashi Sekiguchi4, Kouichi Murakami3

  1. International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS)
  2. PRESTO, Japan Science and Technology Agency
  3. Institute of Applied Physics, University of Tsukuba
  4. Advanced Electronic Materials Center, National Institute for Materials Science

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