Press Release 2010
Doping and Raman Characterization of Boron and Phosphorus Atoms in Germanium Nanowires
This research was conducted by
Naoki Fukata
Naoki Fukata
Germanium (Ge) nanowires are expected to be one of the best candidates for the next generation vertical type transistors. In this study, we could show that Raman scattering measurements clarify the states of dopant atoms in Ge nanowires and finally the formation of p-type and n-type Ge nanowires. Our technique is a very powerful method to characterize the properties of semiconductor nanostructures.