Yosuke Sasama, NIMS Postdoctoral Researcher (Surface Quantum Phase Materials Group) won the 51st Young Scientist Presentation Award (Fall, 2021) from the Japan Society of Applied Physics. This award is given to young members of JSAP for their outstanding presentations that could contribute to the development of applied physics.

Diamond is expected to be a next-generation semiconductor material because of its excellent semiconductor properties. Yosuke Sasama has successfully fabricated high-performance diamond transistors with high mobility and normally-off operation by using hexagonal boron nitride as a gate insulator and a new fabrication method that does not expose the hydrogen-terminated diamond surface to air.