MANA International Symposium 2026 Frontier of semiconductors and neuromorphic materials

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Program

DAY110.8
DAY210.9

Opening Session

9:00-9:10

Opening Remarks


Plenary Talk
(Chair: Yasumitsu Miyata)

9:10-10:10

Quantum Circuits and Applications of 2D Materials

James Hone
Professor, Columbia University

Photo session＆Coffee Break

Session1 (10:30-11:50)

2D Semiconductors (Chair: Yasumitsu Miyata)

10:30-11:00

Defect Suppression in CVD-grown Monolayer Transition Metal Dichalcogenides

Yi Wan
Assistant Professor, National University of Singapore

11:00-11:30

MOCVD-Grown MoS2 Wafers as a Transfer-Free Platform for Top-Gate Devices

Kosuke Nagashio
Professor, The University of Tokyo

11:30-11:50

Solid-phase epitaxy of NbSe2 electrodes on WSe2 for p-type FETs

Ryotaro Sakakibara
Researcher, MANA, NIMS

Lunch

Session2 (13:30-14:50)

Oxide Semiconductors (Chair: Shinjiro Hara)

13:30-14:00

Advanced oxide semiconductor transistor with gate-all-around nanosheet structure

Masaharu Kobayashi
Professor, The University of Tokyo

14:00-14:30

Metal oxide-based thin-film transistors and thermal transistors

Hiromichi Ohta
Professor, Hokkaido University

14:30-14:50

Interface engineering of ferroelectric HfO2-based devices using oxide semiconductor interfacial layer

Takashi Onaya
Researcherr, MANA, NIMS

Coffee Break

Session3 (15:20-16:40)

Group IV Semiconductors (Chair: Naoki Fukata)

15:20-15:50

Toward Heterogeneous Ge CFETs: Wafer-Bonded Front-End Devices and Monolithic BEOL-Compatible SnO/IGZO

Yao-Jen Lee
Professor, National Yang Ming Chiao Tung University

15:50-16:20

Materials and Device Technology Development Using a 300 mm Pilot Line for Si Nanosheet Gate-All-Around Transistors

Toshifumi Irisawa
Team Leader, AIST

16:20-16:40

High-Hole-Mobility Diamond Transistor

Takahide Yamaguchi
Principal Researcher, MANA, NIMS

Coffee Break

Poster Session (17:00-18:30)

Banquet (18:30-20:30)