Masaharu Kobayashi, Ph.D. is a professor at The University of Tokyo. He received a Ph.D degree in Electrical Engineering from Stanford University. From 2010 to 2014, He was a Research Staff Member (proper researcher) in IBM Watson Research Center. He joined The University of Tokyo in 2014. His research interest is nanoelectronic device for energy-efficient computing.

Oxide semiconductor (OS) is a promising transistor channel material for integrated circuit applications such as monolithic 3D integration and 3D memory. For those applications, transistors need to be scaled down for high density integration. To achieve high performance and low power consumption, we have to employ a device architecture that can suppress short channel effect. Gate-all-around (GAA) nanosheet (NS) structure, which has been recently introduced in advanced Si CMOS technology, will be required. In this presentation, we will introduce our recent research progress on the development of GAA NS OS FETs [1]. By using a novel process integration scheme (Fig.1), GAA NS OS FETs show not only high performance but also high reliability compared with single-gate OS FETs.

1. K.-W. Park, A. Chen, K. Sakai, S. Hwang, X. Huang, T. Saraya, T. Hiramoto, T. Takahashi, M. Uenuma, Y. Uraoka, M. Kobayashi, 72, 12, 7128 (2025). DOI: 10.1109/TED.2025.3605574