Tianyi MA
NIMS Post-doc fellow, Spintronics Group,
Research Center for Magnetic and Spintronic Materials
Email: MA.Tianyi[at]nims.go.jp


SHORT BIOGRAPHY
Tianyi Ma received his International Dual Ph.D. in Condensed Matter Physics from Institut Jean Lamour, Universite de Lorraine (France) and the Institute of Physics, Chinese Academy of Sciences (China) in 2023. He subsequently pursued postdoctoral research in spintronics at the National University of Singapore (2023-2024) and the National Institute for Materials Science (NIMS), Japan (2024-present).Nov. 2025, he will be awarded the JSPS Postdoctoral Fellowship for Research in Japan.
His research focuses on the development of epitaxial quantum-well magnetic tunnel junctions with tunable bias-voltage responses, as well as the study of symmetry-dependent spin-orbit torque generation in magnetic and altermagnetic heterostructures. The figure below highlights his main research results.


(Fugure) Summary of Tianyi Ma's main research achievements


EDUCATION
  • International Dual Ph.D. in Condensed Matter Physics, Universite de Lorraine (France) & University of Chinese Academy of Sciences (China), 2023
  • B.S. in Physics, Jilin University (China), 2018


    • PROFESSIONAL EXPERIENCE
  • 2024.09 - present: Postdoctoral Researcher, National Institute for Materials Science, Japan
  • 2023.10 - 2024.02: Research Fellow, National University of Singapore, Singapore

    • RESEARCH INTEREST
  • Spintronics
  • Nanofabrication of Magnetic tunnel junctions
  • Spin-orbit torque and spin-dependent tunneling in altermagnet multilayers

    • Recent Publications, Presentations and Patents
  • https://samurai.nims.go.jp/profiles/ma_tianyi/publications
  • Google Scholar
  • ORCID

    • Selected Publications All publications (ResearchGate)
    1. T. Y. Ma, B. S. Tao, X. Devaux, H. X. Yang, Y. L, Zuo, S. Migot, O. Kurnosikov, M. Vergnat, X. F. Han and Y. Lu,
      "Impact of Interfacial Disorder and Band Structure on the Resonant Conductance Oscillation in Quantum-Well-Based Magnetic Tunnel Junctions"
      ACS Appl. Electron. Mater. 6, 6810-6819 (2024).

    2. T. Y. Ma, Y. Zhu, P. A. Dainone, T. X. Chen, X. Devaux, C. H. Wan, S. Migot, G. Lengaigne, M. Vergnat, Y. Yan, X. F. Han, and Y. Lu,
      "Large Sign Reversal of Tunneling Magnetoresistance in an Epitaxial Fe/MgAlOx/Fe4N magnetic Tunnel Junction"
      ACS Appl. Electron. Mater. 5, 5954-5961 (2023).

    3. T. Y. Ma, C. H. Wan, J. Dong, C. Y. Guo, M. K. Zhao, X. Wang, Y. Zhang, G. Q. Yu, and X. F. Han,
      "Efficient Spin-Orbit-Torque Switching Assisted by an Effective Perpendicular Field in a Magnetic Trilayer"
      Phys. Rev. Applied 16, 014016 (2021).

    4. T. Y. Ma, C. H. Wan, X. Wang, W. L. Yang, C. Y. Guo, C. Fang, M. K. Zhao, J. Dong, Y. Zhang, and X. F. Han,
      "Evidence of magnetization switching by anomalous spin Hall torque in NiFe"
      Phys. Rev. B 101, 134417 (2020).