Rombang Rizky SIHOMBING
Postdoctoral Researcher, Spintronics Group,
Research Center for Magnetic and Spintronic Materials
Email: SIHOMBING.RombangRizky[at]nims.go.jp


SHORT BIOGRAPHY
Rombang Rizky Sihombing received his Ph.D. in Engineering from the University of Tsukuba-NIMS Joint Graduate School in 2025. He was a recipient of the NIMS Graduate Research Assistantship fellowship from January 2020 to February 2025. Since April 2025, he has been working as a postdoctoral researcher at the National Institute for Materials Science (NIMS).

His research focuses on developing low-barrier-height materials such as MgGa2O4 for magnetic tunnel junctions. Currently, he is exploring new barrier materials based on high-entropy oxides (HEOs). He has successfully developed an epitaxial HEO, LiTiMgAlGaO (L5O), as a candidate tunnel barrier material. The figure below summarizes his main research achievements.

(Figure) An epitaxial HEO, LiTiMgAlGaO for a new concept tunnel barrier for magnetic tunnel junctions


EDUCATION
  • 2020.04 - 2025.02 Materials Science and Engineering, University of Tsukuba
  • 2015.08 - 2018.04 Department of Physics, Bandung Institute of Technology
  • 2010.08 - 2014.02 Department of Physics, Padjadjaran University


    • PROFESSIONAL EXPERIENCE
  • 2025.04 - Present Postdoctoral Researcher, National Institute for Materials Science, Japan
  • 2020.01 - 2025.02 NIMS Graduate Research Assistantship fellowship

    • RESEARCH INTEREST
  • Spintronics
  • Epitaxial High-Entropy Oxides (HEOs) thin films
  • Epitaxial magnetic tunnel junctions
  • Device fabrication of magnetic tunnel junction (nano-sized devices)

    • Recent Publications, Presentations and Patents
  • https://samurai.nims.go.jp/profiles/s_rombangrizky
  • Google Scholar
  • ORCID

    • Selected Publications (ResearchGate)
    1. R. R. Sihombing, T. Scheike, J. Uzuhashi, H. Yasufuku, T. Ohkubo, Z. Wen, S. Mitani, and H. Sukegawa,
      "High entropy oxide epitaxial films with interface perpendicular magnetic anisotropy and tunnel magnetoresistance effect toward spintronic applications"
      Mater. Today 88, 12-23 (2025).
      Open access
      [NIMS Press Release] Achieving Low Resistance and High Performance in MTJs Using High-Entropy Oxides

    2. R. R. Sihombing, T. Scheike, J. Uzuhashi, T. Ohkubo, Z. Wen, S. Mitani, and H. Sukegawa,
      "Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic scale MgO insertion layers"
      Appl. Phys. Lett. 126, 022407-1~7 (2025).
      Selected as Editor's Pick
      Open access