Overview
Developing a new magnetic recording medium suitable for the energy assisted magnetic recording
We carry out fundamental researches on magnetic recording with high areal density beyond 4 Tbit/in2. For this areal density, new magnetic recording method with an assistance by the external energy such as heat, microwave magnetic field and light is required. To realize an effective magnetization switching, we are developing a new magnetic recording medium suitable for the energy assisted magnetic recording by the control of the microstructure and magnetization dynamics.
Practical 3-terminal STT/SOT-MRAMs and promising materials
The non-volatility of magnetization and the unique multilayer element structure result in ultra-low power consumption and enhanced write endurance. Practical research is underway to develop 3-terminal MRAMs as an alternative device to existing cache memories. However, one of its issues is the requirement of an external magnetic field for operation. We address this issue by developing thin-film material properties that focus on the high orbital hybridization effect and atomic-site degrees of freedom of light-element ions such as boron, carbon, and nitrogen. In addition, we approach a multilayer device structure and an optimization of load current system.
Major Facilities
See our center's website for further information about facilities.
