Takahide Yamaguchi (Principal Researcher), Yosuke Sasama (NIMS Postdoctoral Researcher), and co-workers' research "High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures" was published in the journal "Nature Electronics".

■ Related Information
- Nature Electronics
https://doi.org/10.1038/s41928-021-00689-4
- Paper
High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures