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"Vacancy complexes acting as midgap recombination centers in (Al,Ga)N semiconductors"
Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Shoji Ishibashi, Akira Uedono
IWJT2021, Proceedings, IEEE Xplore Digital Library (2021)
doi:10.23919/IWJT52818.2021.9609493
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"Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg"
K. Shima, R.Tanaka, S.Takashima, K.Ueno, M.Edo, K.Kojima, A.Uedono, S. Ishibashi, S.F.Chichibu
Appl. Phys. Lett. 119, 182106 (2021)
doi.org/10.1063/5.0066347
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"Study of HfO2-Based High-k Gate Insulators for GaN Power Device"
Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Ryota Ochi, Tomomi Sawada, Yoshihiro Irokawa, Tamotsu Hashizume, Koji Shiozaki, Takashi Onaya, Kazuhito Tsukagoshi, Yasuo Koide
ECS Transactions, 104 (4) 113-120 (2021)
doi.org/article/10.1149/10404.0113ecst
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"Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy"
L.Y.Li, K.Shima, M.Yamanaka, K.Kojima, T.Egawa, A.Uedono, S.Ishibashi, T.Takeuchi, M.Miyoshi, S.F.Chichibu
Appl. Phys. Lett. 119, 091105 (2021)
doi.org/10.1063/5.0066263
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"Vacancy-type defects in bulk GaN grown by oxide vapor phase epitaxy probed using positron annihilation"
Akira Uedono, Junichi Takino, Tomoaki Sumi, Yoshio Okayama, Masayuki Imanishi, Shoji Ishibashi, Yusuke Mori
Journal of Crystal Growth 570 (2021) 126219
doi.org/10.1016/j.jcrysgro.2021.126219
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"Ambient-hydrogen-induced changes in the characteristics of Pt/GaN Schottky diodes fabricated on bulk GaN substrates"
Yoshihiro Irokawa, Tomoko Ohki, Toshihide Nabatame, Yasuo Koide
Japanese Journal of Applied Physics. 60 068003 (2021)
doi.org/10.35848/1347-4065/ac0260
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"Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed-Grown m-Plane GaN Substrate"
Jun Chen, Wei Yi, Shun Ito, Takashi Sekiguchi
Phys. Status Solidi A, 2021 2100175 doi.org/10.1002/pssa.200675469
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"Space-charge-controlled field emission analysis of current conduction in amorphous and crystallized atomic-layer-deposited Al2O3 on GaN "
Atsushi Hiraiwa, Kiyotaka Horikawa, Hiroshi Kawarada
Journal of Applied Physics 129, 195303 (2021) doi.org/10.1063/5.0047200
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"Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes"
Kenji Shiojima, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo
Japanese Journal of Applied Physics, 60 056503 (2021)
doi.org/10.35848/1347-4065/abf5ab
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"Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by unactivated Mg doped GaN layer"
T.Liu, H.Watanabe, S.Nitta, J.Wang, G.Yu, Y.Ando, Y.Honda, H.Amano, A.Tanaka, Y.Koide
Appl. Phys. Lett. 118, 072103 (2021)
doi.org/10.1063/5.0034584
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"Highly-crystalline 6 inch free-standing GaN observed using X-ray diffraction topography"
Jaemyung Kim, Okkyun Seo, L.S.R. Kumara, Toshihide Nabatame, Yasuo Koide, Osami Sakata
CrystEngComm 23, 1628-1633(2021）
doi.org/10.1039/D0CE01572E
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"Local Lattice Plane Orientation Mapping of Entire GaN Wafer"(第6章)
Osami Sakata and Jaemyung Kim
Characterization of Defects and Deep Levels for GaN Power Devices (書籍、査読付き）
AIP e-Book (Published Online: December 2020)
doi.org/10.1063/9780735422698_006
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"Combined APT and STEM Analyses" (第5章)
Ashutosh Kumar and Tadakatsu Ohkubo
Characterization of Defects and Deep Levels for GaN Power Devices (書籍、査読付き）
AIP e-Book (Published Online: December 2020)
doi.org/10.1063/9780735422698_005
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"Interface characteristics of β-Ga2O3 / Al2O3 / Pt capacitors after postmetallization annealing"
Masafumi Hirose, Toshihide Nabatame, Yoshihiro Irokawa, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Liwen Sang, Yasuo Koide, Hajime Kiyono
Journal of Vacuum Science & Technology A 39, 012401 (2021) doi.org/10.1116/6.0000626
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"Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam"
Akira Uedono, Hideki Sakurai, Tetsuo Narita, Kacper Sierakowski, Michal Bockowski, Jun Suda, Shoji Ishibashi, Shigefusa F. Chichibu, Tetsu Kachi
Scientific Reports volume 10, Article number: 17349 (2020) doi.org/10.1038/s41598-020-74362-9
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"Postdeposition annealing effect on the reliability of atomic-layer-deposited Al2O3 films on GaN"
Kiyotaka Horikawa, Satoshi Okubo, Hiroshi Kawarada, Atsushi Hiraiwa
Journal of Vacuum Science & Technology B 38, 062207 (2020) doi.org/10.1116/6.0000531
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"Influence of implanted Mg concentration on defects and Mg distribution in GaN"
Ashutosh Kumar, Wei Yi, Jun Uzuhashi, Tadakatsu Ohkubo, Jun Chen, Takashi Sekiguchi, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono
Journal of Applied Physics 128, 065701 (2020) doi/10.1063/5.0014717
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"Surface potential imaging and characterizations of a GaN p-n junction with Kelvin probe force microscopy"
Tomonori Nakamura, Nobuyuki Ishida, Keisuke Sagisaka, Yasuo Koide
AIP Advances 10, 085010 (2020) doi.org/10.1063/5.0007524
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"陽電子消滅を用いたAl2O3/GaNの空隙・空孔型欠陥の評価"
上殿明良、生田目俊秀、M Dickmann、W.Egger、C.Hugenschemidt、石橋章司
陽電子科学 15. 11-16 (2020) https://positron-science.org/03journal/index.html
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"Mg diffusion and activation along threading dislocations in GaN"
Wei Yi, Ashutosh Kumar, Jun Uzuhashi, Takashi Kimura, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Yongzhao Yao, Yukari Ishikawa, Jun Chen, Tadakatsu Ohkubo, Takashi Sekiguchi Kazuhiro Hono
Applied Physics Letters, 116, 242103 (2020) doi.org/10.1063/5.0009596
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"Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes"
Jun Chen, Wei Yi, Ashutosh Kumar, Akio Iwanade, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Shun Ito, Takashi Kimura, Tadakatsu Ohkubo, Takashi Sekiguchi
Journal of Electronic Materials,49,5196-5204 (2020)
doi.org/10.1007/s11664-020-08081-2
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"Characterizations of GaN nanowires and GaInN/GaN multi-quantum shells grown by MOVPE"
Nanami Goto, Weifang Lu, Hideki Murakami, Mizuki Terazawa, Jun Uzuhashi, Tadakatsu Ohkubo, Kazuhiro Hono, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya
Japanese Journal of Applied Physics, 59 SGGE05 (2020)
doi.org//10.35848/1347-4065/ab70aa
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"Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy"
Akira Uedono, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, Shigefusa F. Chichibu
Proceedings of the SPIE, Volume 11280 (2020) doi.org/10.1117/12.2541518
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"Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors"
Shigefusa F. Chichibu, Shima, Kohei Shima, Kazunobu Kojima, Shoji Ishibashi, Akira Uedono,
Proceedings of the SPIE, Volume 11280 (2020) doi.org/10.1117/12.2545409
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"Dynamic space-charge-controlled field emission model of current conduction in metal–insulator–semiconductor capacitors"
A. Hiraiwa, K. Horikawa, H. Kawarada
Journal of Applied Physics. 127,065307(2020) doi.org/10.1063/1.5138729
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"Voids and vacancy-type defects in SiO2/GaN structures probed by monoenergetic positron beams"
Akira Uedono, Wataru Ueno, Takahiro Yamada, Takuji Hosoi, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Heiji Watanabe
Journal of Applied Physics 127, 054503 (2020) doi.org/10.1063/1.5134513
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"Surface morphology smoothing of a 2 inch-diameter GaN homoepitaxial layer observed by X-ray diffraction topography"
Jaemyung Kim, Okkyun Seo, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
RSC Advances 10, 1878 (2020) doi.org/10.1039/C9RA08882B
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"Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates"
Ashutosh Kumar, Jun Uzuhashi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono
Journal of Applied Physics 126, 235704 (2019) doi.org/10.1063/1.5132345
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"Characteristics of Several High-k Gate Insulators for GaN Power Device"
Toshihide Nabatame, Erika Maeda, Mari Inoue, Masafumi Hirose, Hajime Kiyono, Yoshihiro Irokawa, Koji Shiozaki, Yasuo Koide
ECS Transactions, proceedings, 92 (4) 109-117 (2019) doi.org/10.1149/09204.0109ecst
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"Hydrogen effect on Pt/Al2O3/GaN metal-oxide-semiconductor capacitors"
Yoshihiro Irokawa, Toshihide Nabatame, Akihiko Ohi, Naoki Ikeda, Osami Sakata,Yasuo Koide
Japanese Journal of Applied Physics 58, 100915(2019) doi.org/10.7567/1347-4065
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"Calculation of Positron States and Annihilation Parameters in Gamma and Amorphous Al2O3"
Shoji Ishibashi, Akira Uedono
SLOPOS15, proceedings, APhysPolA.137.231(2020) doi.org/10.12693/APhysPola.137.231
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"Annealing Behaviours of Open Spaces in Thin Al2O3 Films Deposited on Semiconductors Studied Using Monoenergetic Positron Beams"
A.Uedono, W.Egger, T.Koschine, C.Hugenschmidt, M.Dickmann, S.Ishibashi
Acta Physica Polonica A 137, 2, 227 (2020) doi.org/10.12693/APhysPolA.137.227
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"Investigation of Al2O3/GaN interface properties by sub-bandgap photo-assisted capacitance-voltage technique"
Yoshihiro Irokawa, Toshihide Nabatame, Kazuya Yuge, Akira Uedono, Akihiko Ohi, Naoki Ikeda, Yasuo Koide
AIP Advances 9, 085319 (2019) doi.org/10.1063/1.5098489
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"Photoluminescence Studies of Sequentially Mg and H Ion-implanted GaN with Various Implantation Depths and Crystallographic Planes"
Kohei Shima, Kazunobu Kojima, Akira Uedono, Shigefusa F. Chichibu
IWJT2019, Proceedings, IEEE Xplore Digital Library (2019) doi.org/10.23919/IWJT.2019.8802886
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"Influence of post-deposition annealing on characteristics of Pt/Al2O3/β-Ga2O3 MOS capacitors"
Masafumi Hirose, Toshihide Nabatame, Kazuya Yuge, Erika Maeda, Akihiko Ohi, Naoki Ikeda, Yoshihiro Irokawa, Hideo Iwai, Hideyuki Yasufuku, Satoshi Kawada, Makoto Takahashi, Kazuhiro Ito, Yasuo Koide, Hajime Kiyono
Microelectronic Engineering 216, 111040 (2019) doi.org/10.1016/j.mee.2019.111040
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"Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires"
Wei Yi, Jun Uzuhashi, Jun Chen, Takashi Kimura, Satoshi Kamiyama, Tetsuya Takeuchi, Tadakatsu Ohkubo, Takashi Sekiguchi, Kazuhiro Hono
Applied Physics Express 12 085003 (2019) doi.org/10.7567/1882-0786
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"Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer"
Jaemyung Kim, Okkyun Seo, Atsushi Tanaka, Jun Chen, Kenji Watanabe, Yoshio Katsuya, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide, Osami Sakata
CrystEngComm 21, 4036-4041 (2019) doi.org/10.1039/C9CE00463G
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"Annealing Behavior of Vacancy‐Type Defects in Mg‐ and H‐Implanted GaN Studied Using Monoenergetic Positron Beams"
Akira Uedono, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Kohei Shima, Kazunobu Kojima, Shigefusa F. Chichibu, Shoji Ishibashi
Physica status solidi (b) 256 (10) (2019) doi.org/10.1002/pssb.201900104
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"Quantification of the quantum efficiency of radiation of a freestanding GaN crystal placed outside an integrating sphere "
Kazunobu Kojima, Kenichiro Ikemura, Shigefusa F. Chichibu
Japanese Journal of Applied Physics 12 (6) (2019) doi.org/10.7567/1882-0786
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"Room temperature photoluminescence lifetime for the near-band-edge emission of epitaxial and ion-implanted GaN on GaN structures"
Shigefusa F. Chichibu, Kohei Shima, Kazunobu Kojima, Shin-ya Takashima, Katsunori Ueno, Masaharu Edo, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Shoji Ishibashi
Japanese Journal of Applied Physics 58, SC0802 (2019) doi.org/10.7567/1347-4065
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"Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam"
Akira Uedono, Alexandra-Madalina Siladie,Julien Pernot, Bruno Daudin , Shoji Ishibashi
Journal of Applied Physics 125, 175705 (2019) doi.org/10.1063/1.5088653
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"Advanced photo-assisted capacitance–voltage characterization of insulator/wide-bandgap semiconductor interface using super-bandgap illumination"
Atsushi Hiraiwa, Satoshi Okubo, Kiyotaka Horikawa, Hiroshi Kawarada
Journal of Applied Physics 125, 175704 (2019) doi.org/10.1063/1.5089793
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"Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion"
Jun Chen, Wei Yi, Takashi Kimura, Shinya Takashima, Masaharu Edo, Takashi Sekiguchi
Applied Physics Express 12, 051010 (2019) doi.org/10.7567/1882-0786
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"Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence"
Wei Yi, Jun Chen, Seiji Higuchi, Takashi Sekiguchi
Applied Physics Express 12, 051005 (2019) doi.org/10.7567/1882-0786
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"Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy"
M.Sumiya, K.Fukuda, S.Takashima, S.Ueda, T.Onuma, T.Yamaguchi, T. Honda, A.Uedono
Journal of Crystal Growth 511 15-18 (2019) doi.org/10.1016/j.jcrysgro.2019.01.021
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"Lattice-plane bending angle modulation of Mgdoped GaN homoepitaxial layer observed by X-ray diffraction topography "
Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
CrystEngComm 21 2281-2285 (2019) doi.org/10.1039/C8CE01906A |
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"71Ga NMR characterization of an n-doped free-standing gallium nitride wafer "
Atsushi Goto, Yoshihiro Irokawa, Toshihide Nabatame, Masataka Tansho, Kenjiro Hashi, Shinobu Ohki, Tadashi Shimizu, Yasuo Koide
Japanese Journal of Applied Physics 58 031003 (2019) 1doi.org/0.7567/1347-4065 |
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"Mapping of a Lattice-Plane Tilting in a GaN Wafer Using Energy-Resolved X-Ray Diffraction Topography "
Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
Phys. Rev. Applied 11, 024072 (2019) doi.org/10.1103/PhysRevApplied.11.024072 |
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"Characteristics of Al2O3/native oxide/n-GaN capacitors by post-metallization annealing "
Kazuya Yuge, Toshihide Nabatame , Yoshihiro Irokawa, Akihiko Ohi, Naoki Ikeda, Liwen Sang , Yasuo Koide, Tomoji Ohishi
Semicond. Sci. Technol. 34 [3] 034001 (2019) doi.org/10.1088/1361-6641 |
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"Depth-resolved electronic structure measurements by hard X-ray photoemission combined with X-ray total reflection: Direct probing of surface band bending of polar GaN "
Shigenori Ueda
Applied Physics Express 11, 105701 (2018) doi.org/0.7567/APEX.11.105701 |
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"Structural evaluation of ions-implanted GaN films by photothermal deflection spectroscopy"
Masatomo Sumiya, Kiyotaka Fukuda, Hideo Iwai, Tomohiro Yamaguchi, TakeyoshiOnuma, Tohru Honda
AIP Advances 8, 115225 (2018) doi.org/10.1063/1.5052493
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"Characterization of a 4-inch GaN wafer by X-ray diffraction topography"
Jaemyung Kim, Okkyun Seo, Chulho Song, Yanna Chen, Satoshi Hiroi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
CrystEngComm. 20, 7761-7765（2018） doi.org/10.1039/C8CE01440J |
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"Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates"
Ashutosh Kumar, Kazutaka Mitsuishi , Toru Hara, Koji Kimoto, Yoshihiro Irokawa, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Yasuo Koide
Nanoscale Research Letters 13:403 (2018) doi.org/10.1186/s11671-018-2804-y |
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"Room-temperature photoluminescence lifetime for the near-band-edge emission of (000¯1) p-type GaN fabricated by sequential ion-implantation of Mg and H"
K.Shima, H.Iguchi, T.Narita, K.Kataoka, K.Kojima, A.Uedono, and S.F.Chichibu
Applied Physics Letters. 113, 191901 (2018) doi.org/10.1063/1.5050967 |
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"Investigation of intermediate layers in oxides/GaN(0001) by electron microscopy"
Yoshihiro Irokawa, Kazutaka Mitsuishi, Toshihide Nabatame, Koji Kimoto, Yasuo Koide
Japanese Journal of Applied Physics.57 [11] 118003 (2018) doi.org/10.7567/JJAP.57.118003 |
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"Electron microscopy and ultraviolet photoemission spectroscopy studies of native oxides on GaN(0001)"
Yoshihiro Irokawa, Kazutaka Mitsuishi, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Tsuyoshi Ohnishi, Koji Kimoto, Yasuo Koide
Japanese Journal of Applied Physics. 57 [9] 098003（2018）doi.org/10.7567/JJAP.57.098003 |
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"Lattice-plane orientation mapping of homo-epitaxial GaN(0001) thin films via grazing-incidence X-ray diffraction topography in 2-in. wafer"
Jaemyung Kim, Okkyun Seo, Chulho Song, Satoshi Hiroi, Yanna Chen, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
Applied Physics Express. 11[8] 081002（2018）doi.org/10.7567/APEX.11.081002 |
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"Evaluation of lattice curvature and crystalline homogeneity for 2-inch GaN homo-epitaxial layer"
Okkyun Seo, Jae Myung Kim, Chulho Song, Yanfang Lou, L. S. R. Kumara, Satoshi Hiroi, Yanna Chen, Yoshio Katsuya, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
AIP Advances 8, 075318（2018）doi.org/10.1063/1.5042098 |
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"Synchrotron X-ray diffraction characterization of the inheritance of GaN homoepitaxial thin films grown on selective growth substrates"
Yanfang Lou, Chulho Song, Yanna Chen, L.S.R. Kumara, Natalia Palina, Okkyun Seo, Satoshi Hiroi, Kentaro Kajiwara, Masato Hoshino, Kentaro Uesugi, Yoshihiro Irokawa, Toshihide Nabatame, Yasuo Koide, Osami Sakata
CrystEngComm. 20, 2861（2018）doi.org/10.1039/C8CE00229K |
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"Large electron capture-cross-section of the major nonradiative recombination centers in Mg-doped GaN epilayers grown on a GaN substrate"
S. F. Chichibu, K. Shima, K. Kojima, S. Takashima, M. Edo, K. Ueno, S. Ishibashi, A. Uedono
Applied Physics Letters.112, 211901 (2018) doi.org/10.1063/1.5030645 |
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"Time-dependent dielectric breakdown of atomic-layer-deposited Al2O3 films on GaN"
Atsushi Hiraiwa, Toshio Sasaki, Satoshi Okubo, Kiyotaka Horikawa , Hiroshi Kawarada
Journal of Applied Physics. 123, 155303（2018） doi.org/10.1063/1.5022338 |
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"Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams "
Akira Uedono, Toshihide Nabatame, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Masatomo Sumiya, Shoji Ishibashi
Journal of Applied Physics. 123, 155302 (2018) doi.org/10.1063/1.5026831 |
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"Valence band edge tail states and band gap defect levels of GaN bulk and Inx Ga1−x N films detected by hard X-ray photoemission and photothermal deflection spectroscopy"
Masatomo Sumiya, Shigenori Ueda, Kiyotaka Fukuda, Yuya Asai, Yujin Cho, Liwen Sang, Akira Uedono, Takashi Sekiguchi, Takeyoshi Onuma,Tohru Honda
Applied Physics Express 11[2] 021002 (2018) doi.org/10.7567/APEX.11.021002 |
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"The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN"
S. F. Chichibu, A. Uedono, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, and S. Ishibashi
Journal of Applied Physics. 123, 161413 (2018) doi.org/10.1063/1.5012994 |
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"Carrier Trapping by Vacancy-Type Defects in Mg-Implanted GaN Studied Using Monoenergetic Positron Beams"
Akira Uedono, Shinya Takashima, Masaharu Edo, Katsunori Ueno, Hideaki Matsuyama, Werner Egger, Tönjes Koschine, Christoph Hugenschmidt, Marcel Dickmann, Kazunobu Kojima, Shigefusa F. Chichibu, Shoji Ishibashi
Physica status solidi (b) 1700521 (2017) doi.org/10.1002/pssb.201700521 |
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"Low-energy ion scattering spectroscopy and reflection high-energy electron diffraction of native oxides on GaN(0001). "
Yoshihiro Irokawa, Taku T. Suzuki, Kazuya Yuge, Akihiko Ohi, Toshihide Nabatame, Koji Kimoto, Tsuyoshi Ohnishi, Kazutaka Mitsuishi , Yasuo Koide
Japanese Journal of Applied Physics. 56 [12] (2017) 128004-1 doi.org/10.7567/jjap.56.128004 |
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"Electron microscopy studies of the intermediate layers at the SiO2GaN interface."
Kazutaka Mitsuishi, Koji Kimoto, Yoshihiro Irokawa, Taku Suzuki, Kazuya Yuge, Toshihide Nabatame, Shinya Takashima, Katsunori Ueno, Masaharu Edo,Kiyokazu Nakagawa and Yasuo Koide
Japanese Journal of Applied Physics. 56[11] (2017) 110312 doi.org/10.7567/JJAP.56.110312 |
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"Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes."
Liwen Sang, Bing Ren, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Atsushi Tanaka, Yujin Cho, Yoshitomo Harada, Toshihide Nabatame, Takashi Sekiguchi, Shigeyoshi Usami, Yoshio Honda, and Hiroshi Amano
Applied Physics Letters. 111 [12] (2017) 122102-1 doi.org/10.1063/1.4994627 |
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"Demonstration of omnidirectional photoluminescence (ODPL) spectroscopy for precise determination of internal quantum efficiency of radiation in GaN single crystals"
Kazunobu Kojima, Hirotaka Ikeda, Kenji Fujito, Shigefusa F. Chichibu
Applied Physics Letters, 111, 032111(2017) doi.org/10.1063/1.4995398 |
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