External Project
Research and Development of Next-Generation Edge AI Semiconductors for Social Implementation
- JST Project
- Project Leader: Munehiro Tada (Keio University)
- Next-Generation Edge AI Semiconductor Research and Development Project
As AI technology advances, demand for edge AI—which performs real-time processing on devices—is growing rapidly. However, achieving this requires ultra-low-power semiconductors that do not rely on the cloud. This initiative was launched as a national project led by the Ministry of Education, Culture, Sports, Science and Technology (MEXT) and the Japan Science and Technology Agency (JST) to address these societal challenges.
NIMS is participating in “Theme 3: Next-Generation Transistor Technology,” working to develop next-generation channel materials using 2D semiconductors and oxide semiconductors, explore new wiring materials, and establish a manufacturing platform for CFETs (Complementary FETs). Leveraging its expertise in materials science, NIMS aims to establish core technologies with a view toward societal implementation in the 2030s.
Next-generation Transistor Technology
Next-generation Channel
Materials: 2D Semiconductors, Oxide Semiconductors
NIMS Participants
- Yasumitsu Miyata (Co-PI)
- Ryo Kitaura
- Ryotaro Sakakibara
- Takahiro Nagata
New Wiring Materials
NIMS Participants
- Tomoya Nakatani (Co-PI)
- Yuya Sakuraba
- Taisuke Sasaki
- Ryoji Sahara
- Hirofumi Suto
CFET Manufacturing Infrastructure
NIMS Participants
- Takuji Hosoi (Co-PI)
- Shinjiro Hara
- Tomoya Nakatani
- Taisuke Sasaki
- Takahiro Nagata
- Yoshiyuki Yamashita
- Naoka Nagamura
Advanced semiconductor processing facility
- Electron Beam Lithography
- Automated coating, developing, and baking ssystem
- Spin Etcher
- Supercritical Cleaning and Drying System
- Silicon PECVD System
- SiN PECVD Equipment
- Atomic Layer Deposition
- Reactive Ion Etching
- Atomic Layer Etching
- Isotropic Dry Etcher
- Chemical Mechanical Polishing (CMP)
- Wafer Bonding
- Laser Debonding System
- Metal Organic Chemical Vapor Deposition
- Scanning Electron Microscope
- Confocal Near-Infrared Microscope