NIMS Project
Exploring breakthrough technologies for the realization of new materials, new structures, and new-principle devices for post-silicon electronics
- NIMS Focused Project
- Project Leader: Naoki Fukata
- Semiconductor New Materials and Device Technology
As the miniaturization of silicon semiconductors approaches its physical limits, next-generation computing devices require materials, structures, and operating principles that are fundamentally different from those of conventional devices. With a view to realizing post-silicon electronics, this project is a core research and development initiative at NIMS that takes a comprehensive approach, ranging from the exploration of new materials to the proposal of new operating principles.
Building on a foundation of innovative materials such as 2D materials, oxide semiconductors, and insulating films, we aim to create new structures through 3D architectures and heterojunctions, as well as to realize novel devices capable of neuromorphic computing and multi-valued logic. Furthermore, we are simultaneously advancing innovations in interconnection and transmission technologies through the integration of these new materials, working to establish breakthrough technologies that will enable the realization of next-generation semiconductor devices.
| Research project title | Project Leader |
|---|---|
| Fundamental Technologies for Atomic-Layer-Deposited Semiconductors for 3D Structures | |
| Establishing the Foundation for Next-Generation 2D Semiconductors | |
| Theoretical research and experimental verification and development regarding FET interfaces and defect control | |
| Neuromorphic computational device | |
| Development of Reconfigurable Logic Circuits for Next-Generation Computing Technologies | |
| Innovations in Wiring and Transmission Technologies Through the Junction of New Materials |
NIMS Project
Project by Management Expense Grant
Fundamental Technologies for Breakthrough Technologies in Next-Generation Semiconductor Devices
- NIMS Mid- to Long-term Project
- Field Director: Naoki Fukata
- Quantum Nanoarchitectonics (Semiconductors) Project
The development of next-generation semiconductor devices requires the accumulation of fundamental and foundational technologies that underpin individual research projects. As an internal project funded by NIMS’s operating grant, this initiative promotes basic research with a long-term perspective while collaborating with NIMS focused projects.
Through the exploration of quantum effects and novel nanostructures, we aim to elucidate the material properties required for next-generation Semiconductor devices and establish control technologies, thereby serving as the technical foundation for priority projects.