When people hear the word "diamond", many may first think of expensive gemstones. However, in recent years, research has been advancing on using artificially synthesized diamond as a semiconductor electronic material, much like silicon. Diamond possesses ideal properties for fabricating semiconductor devices that can operate with low loss, at high temperatures, high voltages, and high speeds. As such, it is expected to find applications in power conversion, information and communication technologies, and in harsh environments. Unique features such as surface conductivity, negative electron affinity, nitrogen–vacancy (NV) spins, and superconductivity have also attracted attention. Our research focuses on elucidating the fundamental properties of diamond as an electronic material and applying them to functional devices.
RESEARCH OVERVIEW
NEWS
- Aug. 2026
Our paper on fluoropolymer film transfer for semiconductor device fabrication was published in ACS Applied Materials & Interfaces. The research is an extension of experiments originally carried out by students from National Institute of Technology (KOSEN), Kumamoto College during their internship. - May - Jul. 2026
Mr. Dwivedi from Indian Institute of Technology Hyderabad carried out an internship. - May 2026
Our paper on "Effective lateral isolation for hydrogen-terminated diamond field-effect transistors via nitrogen ion implantation" was published in Applied Physics Letters. - Feb.- Mar. 2026
Mr. Matsushita from Kyoto University carried out an internship. - Oct. 2025
Our paper on "Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor" was published in Applied Physics Letters as a Featured Article. - Mar. 2025
Koki Hino (M2, University of Tsukuba - NIMS Joint Graduate School) received Brilliant Poster Award at Hasselt Diamond Workshop 2025 - SBDD XXIX. - Mar. 2025
Our review paper on diamond field-effect transistors was published in Oyo Buturi (Japanese). - Feb. 2025
Ms. Hsiao and Ms. Hsieh from National Yang Ming Chiao Tung University carried out an internship. - Sep. 2024
Our work on "Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers" was selected as the cover image of Carbon. - Sep. 2024
Mr. Iwane, Mr. Shimono, and Mr. Fuchiwaki from National Institute of Technology, Kumamoto College, stayed for a collaborative research. - Sep. 2024
Mr. Tamura from National Institute of Technology, Ube College, carried out an internship. - Aug. 2024
Our paper on "Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator" was published in Applied Physics Letters. - Jul. 2024
Our paper on "Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers" was published in Carbon. - Mar. 2024
Our paper "Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond" was published in ACS Applied Materials & Interfaces. - Sep. 2023
Mr. Sakai and Mr. Mitsunaga from National Institute of Technology, Kumamoto College carried out an internship. - Apr. 2023
We are looking for a postdoc to work on diamond-based devices. For more information please visit Recruit Information. - Sep. 2022
Mr. Urakami and Mr. Ohta from National Institute of Technology, Kumamoto College carried out an internship for a month. They successfully made diamond field-effect transistors. - Dec. 2021
Our paper "High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures" was published in Nature Electronics (SharedIt view-only PDF). - Nov. 2021
Dr. Yosuke Sasama received the Young Scientist Presentation Award at 51th Autumn Meeting of the Japan Society of Applied Physics.