NEWS

• May 2026
  Our paper on "Effective lateral isolation for hydrogen-terminated diamond field-effect transistors via nitrogen ion implantation" has been published in Applied Physics Letters.
• Feb.- Mar. 2026
  Mr. Matsushita from Kyoto University carried out an internship.
• Oct. 2025
  Our paper on "Enhanced channel mobility of hexagonal boron nitride/hydrogen-terminated diamond heterojunction field-effect transistor" has been published in Applied Physics Letters as a Featured Article.
• Mar. 2025
  Koki Hino (M2, University of Tsukuba - NIMS Joint Graduate School) received Brilliant Poster Award at Hasselt Diamond Workshop 2025 - SBDD XXIX.
• Mar. 2025
  Our review paper on diamond field-effect transistors has been published in Oyo Buturi (Japanese).
• Feb. 2025
  Ms. Hsiao and Ms. Hsieh from National Yang Ming Chiao Tung University carried out an internship.
• Sep. 2024
  Our work on "Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers" has been selected as the cover image of Carbon.
• Sep. 2024
  Mr. Iwane, Mr. Shimono, and Mr. Fuchiwaki from National Institute of Technology, Kumamoto College, stayed for a collaborative research.
• Sep. 2024
  Mr. Tamura from National Institute of Technology, Ube College, carried out an internship.
• Aug. 2024
  Our paper on "Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator" has been published in Applied Physics Letters.
• Jul. 2024
  Our paper on "Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers" has been published in Carbon.
• Mar. 2024
  Our paper "Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond" was published in ACS Applied Materials & Interfaces.
• Sep. 2023
  Mr. Sakai and Mr. Mitsunaga from National Institute of Technology, Kumamoto College carried out an internship.
• Apr. 2023
  We are looking for a postdoc to work on diamond-based devices. For more information please visit Recruit Information.
• Sep. 2022
  Mr. Urakami and Mr. Ohta from National Institute of Technology, Kumamoto College carried out an internship for a month. They successfully made diamond field-effect transistors.
• Dec. 2021
  Our paper "High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures" was published in Nature Electronics (SharedIt view-only PDF).
• Nov. 2021
  Dr. Yosuke Sasama received the Young Scientist Presentation Award at 51th Autumn Meeting of the Japan Society of Applied Physics.

MORE NEWS >