NEWS
- Sep. 2024
Our work on "Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers" has been selected as the cover image of Carbon. - Sep. 2024
Mr. Iwane, Mr. Shimono, and Mr. Fuchiwaki from National Institute of Technology, Kumamoto College, stayed for a collaborative research. - Sep. 2024
Mr. Tamura from National Institute of Technology, Ube College, carried out an internship. - Aug. 2024
Our paper on "Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator" has been published in Applied Physics Letters. - Jul. 2024
Our paper on "Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers" has been published in Carbon. - Mar. 2024
Our paper "Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond" was published in ACS Applied Materials & Interfaces. - Sep. 2023
Mr. Sakai and Mr. Mitsunaga from National Institute of Technology, Kumamoto College carried out an internship. - Apr. 2023
We are looking for a postdoc to work on diamond-based devices. For more information please visit Recruit Information. - Sep. 2022
Mr. Urakami and Mr. Ohta from National Institute of Technology, Kumamoto College carried out an internship for a month. They successfully made diamond field-effect transistors. - Dec. 2021
Our paper "High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures" was published in Nature Electronics (SharedIt view-only PDF). - Nov. 2021
Dr. Yosuke Sasama received the Young Scientist Presentation Award at 51th Autumn Meeting of the Japan Society of Applied Physics. - Jun. 2021
Dr. Yosuke Sasama received the Gold Young Scholar Award at 14th International Conference on New Diamond and Nano Carbons 2020/2021. - Mar. 2021
Dr. Yosuke Sasama received the Excellent Poster Presentation Award at MANA International Symposium 2021. - May 2020
Our paper "Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors" was published in Journal of Applied Physics 127, 185707 (2020). (Editor's Pick)