Sep. 2024 Mr. Iwane, Mr. Shimono, and Mr. Fuchiwaki from National Institute of Technology, Kumamoto College, stayed for a collaborative research.
Sep. 2024 Mr. Tamura from National Institute of Technology, Ube College, carried out an internship.
Aug. 2024 Our paper on "Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator" has been published in Applied Physics Letters.
Jul. 2024 Our paper on "Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers" has been published in Carbon.
Mar. 2024 Our paper "Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond" was published in ACS Applied Materials & Interfaces.
Sep. 2023 Mr. Sakai and Mr. Mitsunaga from National Institute of Technology, Kumamoto College carried out an internship.
Apr. 2023 We are looking for a postdoc to work on diamond-based devices. For more information please visit Recruit Information.
Sep. 2022 Mr. Urakami and Mr. Ohta from National Institute of Technology, Kumamoto College carried out an internship for a month. They successfully made diamond field-effect transistors.
Dec. 2021 Our paper "High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures" was published in Nature Electronics (SharedIt view-only PDF).
Nov. 2021 Dr. Yosuke Sasama received the Young Scientist Presentation Award at 51th Autumn Meeting of the Japan Society of Applied Physics.
