Advanced Electronic Materials Group | We are carrying out research on fundamental electrical properties of diamond and its potential applications.

left: hydrogen plasma in which diamond is synthesized, center: hydrogen-terminated diamond surface, right: an atomic force microscopy image of atomically flat diamond surface

SELECTED PUBLICATIONS

Full publication list >

  1. Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
    Yosuke Sasama, Takuya Iwasaki, Mohammad Monish, Kenji Watanabe, Takashi Taniguchi, Yamaguchi Takahide
    Applied Physics Letters 125, 092103 (2024); NIMS Repository.

  2. Surface transfer doping of hydrogen-terminated diamond probed by shallow nitrogen-vacancy centers
    Taisuke Kageura, Yosuke Sasama, Keisuke Yamada, Kosuke Kimura, Shinobu Onoda, Yamaguchi Takahide
    Carbon 229, 119404 (2024), selected cover image; arXiv:2310.17289.

  3. Spin-State Control of Shallow Single NV Centers in Hydrogen-Terminated Diamond
    Taisuke Kageura, Yosuke Sasama, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Keisuke Yamada, Kosuke Kimura, Shinobu Onoda, and Yamaguchi Takahide
    ACS Applied Materials & Interfaces 16, 13212 (2024).

  4. High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures
    Yosuke Sasama, Taisuke Kageura, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, and Yamaguchi Takahide
    Nature Electronics 5, 37 (2022), SharedIt view-only PDF; arXiv:2102.05982.

  5. Charge-carrier mobility in hydrogen-terminated diamond field-effect transistors
    Yosuke Sasama, Taisuke Kageura, Katsuyoshi Komatsu, Satoshi Moriyama, Jun-ichi Inoue, Masataka Imura, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, and Yamaguchi Takahide
    Journal of Applied Physics 127, 185707 (2020), Editor's Pick; arXiv:2001.11831.

  6. Quantum oscillations in diamond field effect transistors with a h-BN gate dielectric
    Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Shiori Sugiura, Taichi Terashima, Shinya Uji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, and Yamaguchi Takahide
    Physical Review Materials 3, 121601(R) (2019); arXiv:1907.13500.

  7. High-mobility diamond field effect transistor with a monocrystalline h-BN gate dielectric
    Yosuke Sasama, Katsuyoshi Komatsu, Satoshi Moriyama, Masataka Imura, Tokuyuki Teraji, Kenji Watanabe, Takashi Taniguchi, Takashi Uchihashi, and Yamaguchi Takahide
    APL Materials 6, 111105 (2018) (open access), Featured Article.

  8. Ionic-liquid-gating setup for stable measurements and reduced electronic inhomogeneity at low temperatures
    Yamaguchi Takahide, Yosuke Sasama, Hiroyuki Takeya, Yoshihiko Takano, Taisuke Kageura, and Hiroshi Kawarada
    Review of Scientific Instruments 89, 103903 (2018); arXiv:1806.09863.

  9. Spin-induced anomalous magnetoresistance at the (100) surface of hydrogen-terminated diamond
    Yamaguchi Takahide, Yosuke Sasama, Masashi Tanaka, Hiroyuki Takeya, Yoshihiko Takano, Taisuke Kageura, and Hiroshi Kawarada
    Physical Review B 94, 161301(R) (2016); arXiv:1605.05035.

  10. Quantum oscillations of the two-dimensional hole gas at atomically flat diamond surfaces
    Yamaguchi Takahide, Hiroyuki Okazaki, Keita Deguchi, Shinya Uji, Hiroyuki Takeya, Yoshihiko Takano, Hidetoshi Tsuboi, and Hiroshi Kawarada
    Physical Review B 89, 235304 (2014).

  11. Low-Temperature Transport Properties of Holes Introduced by Ionic Liquid Gating in Hydrogen-Terminated Diamond Surfaces
    Takahide Yamaguchi, Eiichiro Watanabe, Hirotaka Osato, Daiju Tsuya, Keita Deguchi, Tohru Watanabe, Hiroyuki Takeya, Yoshihiko Takano, Shinichiro Kurihara, and Hiroshi Kawarada
    Journal of the Physical Society of Japan 82, 074718 (2013).

Full publication list >

Back to top >