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III-V族窒化物薄膜やZnO薄膜など次世代太陽電池に期待されるマテリアル |
マテリアルステージ |
5月号12巻ｐ46
（2012）
|
| 14 |
角谷正友,Sang Liwen
上殿明良,中野由崇 |
III-V族窒化物太陽電池 |
未来材料 |
12巻15頁
（2012） |
| 13 |
角谷正友, Sang Liwen, Mickael Lozac'h |
III-V族窒化物薄膜の太陽電池応用 |
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Enhanced performance of InGaN solar cell by using a super-thin AIN interlayer
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Nobuyuki Matsuki,
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JOURNAL OF NONLINEAR OPTICAL PHYSICS&MATERIALS |
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97,131913 |
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M. Sumiya, M. Lozach,
N. Matsuki, S. Ito,
N. Ohhashi, K. Sakoda,
H. Yoshikawa,
S. Ueda, and
K. Kobayashi |
Valence band structure of III-V nitride films characterized by hard X-ray photoelectron spectroscopy |
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Year |
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Citations |
I.F. |
| Phys. Status Solidi C |
2010 |
7, No. 7-8, 1903-1905 |
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51
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| Masataka Imura, Tsuyoshi Ohnishi, Masatomo Sumiya, Meiyong Liao, Yasuo Koide, Hiroshi Amano, and Mikk Lippmaa |
Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC
substrates by high-temperature metal-organic vapor phase epitaxy using
coaxial impact collision ion scattering spectroscopy |
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Year |
Vol. page |
Citations |
I.F. |
| Phys. Status Solidi C |
2010 |
7, No. 10, 2365-2367 |
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50
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Yoshitaka Nakano,
Nobuyuki Matsuki,
Yoshihiro Irokawa and Masatomo Sumiy |
Electrical characterization of n -GaN epilayers using transparent polyaniline
Schottky contacts |
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Year |
Vol. page |
Citations |
I.F. |
| Phys. Status Solidi C |
2010 |
7, 2007-2009 |
0 |
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49
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Title |
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Yoshitaka Nakano,
Nobuyuki Matsuki,
Yoshihiro Irokawa and Masatomo Sumiya |
Anomalous capacitance?voltage characteristics of Pt-AlGaN/GaN Schottky
diodes exposed to hydrogen |
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Year |
Vol. page |
Citations |
I.F. |
| Phys. Status Solidi C |
2010 |
7,1928-1930 |
0 |
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48
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M.Sumiya,
Y. Kamo, N. Ohashi, M. Takeguchi, Y. U. Heo, H. Yoshikawa, S.Ueda,
K.Kobayashi,
T.Nihashi,
M.Hagino, T.Nakano,andS. Fuke |
Fabrication and hard x-ray photoemission analysis of photocathodes with
sharp solar blind sensitivity using AlGaN films grown on Si substrates |
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Year |
Vol. page |
Citations |
I.F. |
Surf. Sci.
256, |
2010 |
4442-4446 |
0 |
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47
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Title |
Link |
S.Ito,
M.Sumiya, M.Mieno,
H. Koinuma |
Growth of MgxZn1-xO film equipped laser heating system |
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Year |
Vol. page |
Citations |
I.F. |
Materials
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2010 |
11-13 |
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46
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H. Matsumura,
Y. Kanematsu,
T. Shimura,
T. Tamaki,
Y. Ozeki,
K. Itoh,
M. Sumiya
T. Nakano and S. Fuke |
Lateral control of GaN polarity using sapphire substrates treated with focused laser irradiation |
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Year |
Vol. page |
Citations |
I.F. |
| Appl. Phys. Expres |
2009 |
s2,101001 |
0 |
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45
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Y. Irokawa,
N. Matsuki,
M. Sumiya,
Y. Sakuma,
T. Sekiguchi, T.Chikyo,
Y. Sumida, and
Y. Nakano, |
Low frequency capacitance-voltage study of hydrogen interaction with Pt-AlGaN/GaN Schottky barrier diodes |
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Year |
Vol. page |
Citations |
I.F. |
| Phys. Status Solid RRL |
2009 |
3,266-2684 |
0 |
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44
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N.Matsuki,
Y.Irokawa,
T.Matsui,
M. Kondo, and M. Sumiya |
Photovoltaic Action in Polyaniline/n-GaN Schottky Diodes,. I.F. |
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Year |
Vol. page |
Citations |
I.F. |
| Appl. Phys. Express |
2009 |
2, 092201 |
0 |
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43
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Link |
| Eiji Fujimoto, Masatomo Sumiya, Tsuyoshi Ohnishi, Kenji Watanabe, Mikk Lippmaa, Yuji Matsumoto, and Hideomi Koinuma, |
Hetero-Epitaxial Growth of ZnO Film by Temperature-Modulated Metalorganic Chemical Vapor Deposition |
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Year |
Vol. page |
Citations |
I.F. |
| Appl. Phys. Express |
2009 |
2, (2009) 045502 |
0 |
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23
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Title |
Journal |
Vol. |
Takayuki Nakano,
Kazuki Nishimoto,
Masatomo Sumiya, and Shunro Fuke |
Growth and properties of ZnO films grown using PA-MOVPE with DMZn and N2O |
Journal of Automation, Mobile Robotics&Intelligent Systems |
Vol. 3,
pp. 124 |
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22
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Authors |
Title |
Journal |
Vol. |
Takayuki Nakano,
Kazuki Nishimoto, Masatomo Sumiya, and Shunro Fuke |
evelopment of UV-photocathode using GaN film on Si substrate |
SPIE |
Vol. 6894
pp.1F1-1F74 |
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10
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Journal |
Vol.page |
| 角谷正友 執筆分担 |
LED革新のための最新技術と展望分極場の影響と回避技術 |
（株）情報機構 |
第2章第2節第6項 pp. 96-104 |
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42
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| M.Sumiya, K.Ohara, T.Ohsawa, M.Shirai, S. Fuke, H. Koinuma, and Y. Matsumoto |
Photo-catalysis effect of III-V nitride film |
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Year |
Vol. page |
Citations |
I.F. |
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2007 |
vol. 4,
2642-2645 |
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M. Kazan,
P.Masri, and
M. Sumiya |
Zone center optical phonons in AlxGa1-xN mixed crystals’ J.. |
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Year |
Vol. page |
Citations |
I.F. |
| Appl. Phys |
2006 |
100,01350 |
1 |
2.316 |
40
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H. Matsumura,
M.Sumiya,
Y.Kawai,
M.Tomiki,
K. Murakami and
S. Fuke |
Microfabrication of GaN groove on sapphire substrate treated selectively by electron beam |
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Year |
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Citations |
I.F. |
| Phys. stat. sol. (c) |
2006 |
3, 1649-1652 |
0 |
0.967 |
39
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T. Matsuoka,
Y. Kobayashi, H.Takahata,
T.Mitate,
S.MizunoA.Sasaki,
M. Yoshimoto, T.Ohnishi,
M. Sumiya |
N-polarity GaN on sapphire substrate grown by MOVPE |
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Year |
Vol. page |
Citations |
I.F. |
Physica Status Solidi
B-Basic Solid State
Physics |
2006 |
243(7), 1446-1450 |
12 |
0.967 |
38
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Title |
Link |
U.S. Joshi,
Y. Matsumoto, K.Itaka, M. Sumiya, and H. Koinuma |
Combinatorial synthesis of Li-doped NiO thin films and their transparent conducting properties |
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Year |
Vol. page |
Citations |
I.F. |
| Applied Surface Science |
2006 |
Volume 252, Issue7,
Pages 2524-2528 |
10 |
1.436 |
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37
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| Masatomo Sumiya and Shunro Fuke |
Effect of treatments of sapphire substrate on growth of GaN film |
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Year |
Vol. page |
Citations |
I.F. |
| Appl. Surf. Sci |
2005 |
244, 269-272 |
16 |
2.498 |
36
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A. Tsukazaki A. Ohtomo,
T. Onuma, M. Ohtani,
T. Makino, M. Sumiya,
K. Ohtani, S. Chichibu, S.Fuke, Y. Segawa,
H.Ohno,
H. Koinuma and
M. Kawasaki, |
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO |
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Year |
Vol. page |
Citations |
I.F. |
| Nature Materials |
2005 |
4, 42?46 |
769 |
15.941 |
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9
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Title |
Journal |
Vol.page |
角谷正友
福家俊郎 |
極性構造から見たGaN薄膜成長におけるサファイア基板上バッファ層の機能 |
日本結晶成長学会誌 |
vol. 32,
No. 2, p.66-73 |
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35
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T. Ohsawa,
Y. Yamamoto,
M. Sumiya,
Y. Matsumoto, and H. Koinuma |
Combinatorial STM study of Cr deposited on Anatase TiO2 (001) surface |
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Year |
Vol. page |
Citations |
I.F. |
| Langumu |
2004 |
20, 3018-3020 |
4 |
3,295 |
34
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M.Sugiyama, T.Nosaka, T.Suzuki, T.Koida, K.Nagajima, T.Aoyama, M.Sumiya,
T.Chikyow,
A. Uedono, and
S. Chichibu |
Reduction of Defect Densities in Cubic GaN Epilayers with AlGaN/GaN supre lattice underlayers Grown on (001) GaAs substrates by metalorganic vapor phase epitaxy |
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Year |
Vol. page |
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| Jpn. J. Appl. Phys |
2004 |
43, 958-965 |
1 |
1.142 |
33
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M. Sumiya and
S. Fuke |
Review of polarity determination and control of GaN |
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Year |
Vol. page |
Citations |
I.F. |
MRS Internet J. of Nitride
Semicond. Res. |
2004 |
Vol. 9, 1-32 |
40 |
2.118 |
32
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M. Sumiya,
A. Tsukazaki,
S.Fuke,
A.Ohtomo,
H.Koinuma and
M. Kawasaki |
SIMS analysis of ZnO films co-doped with N and Ga by temperature gradient pulsed laser deposition |
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Year |
Vol. page |
Citations |
I.F. |
| Applied Surface Science |
2004 |
223,206-209 |
14 |
1.497 |
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Vol. |
S. F. Chichibu,
M. Sugiyama,
T. Nozaka,
T. Suzuki,
T. Onuma,a
K. Nakajima,
T. Aoyama,
M. Sumiya,
T. Chikyow, and
A. Uedono |
Reduction of point defect density in cubic GaN epilayers on (001) GaAs substrates using AlGaN/GaN superlattice underlayers |
J. Cryst. Growth |
Vol. 272, pp. 481-488 |
| 20 |
M. Takabe,
M. Sumiya, and
S. Fuke |
HNO3 treatment of sapphire for management of GaN polarity in MOCVD
method: Comparison of the properties of +c and ?c GaN region |
Mat. Res. Soc. Symp |
Vol.798, pp. 305 |
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31
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J. ?H. Song,
Y. ?Z. Yoo,
T. Skiguchi,
K. Nakajima, P.Ahmet, T.Chikyow, K.Okuno,
M. Sumiya, and
H. Koinuma |
Growth of non-polar a-plane III-nitride thin films on Si (100) using non-polar plane buffer layer |
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Year |
Vol. page |
Citations |
I.F. |
| Phys. Stat. Sol (c) 0 |
2003 |
No. 7, 2520-2524 |
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1.192 |
30
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K. Tamura,
T. Makino,
A. Tsukazaki,
M. Sumiya, S.Fuke, T.Furumochi,
M. Lippmaa, C.H.Chia, Y.Segawa,
H. Koinuma, and
M. Kawasaki |
Donor-acceptor pair luminescence in nitrogen-doped ZnO films grown on lattice-matched ScAlMgO4 (0001) substrates |
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Year |
Vol. page |
Citations |
I.F. |
| Solid State Comm |
2003 |
127, 265-269 |
58 |
1.602 |
29
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M.Sumiya, S.Fuke
A.Tsukazaki, K.Tamura, A.Ohtomo,
M. Kawasaki, and
H. Koinuma |
Quantitative control and detection of heterovalent impurities in ZnO thin films grown by pulse laser deposition |
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Year |
Vol. page |
Citations |
I.F. |
| J. Appl. Phys |
2003 |
93, 2562-2569 |
26 |
2.171 |
28
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M.Sumiya, N.Ogusu, Y.Yotsuda, M. Itoh, S. Fuke,
T. Nakamura,
S. Mochizuki, T.Sano,
S. Kamiyama,
H. Amano, and
I. Akasaki |
Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates |
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Year |
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2003 |
93, 1311-1319 |
64 |
2.171 |
27
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T. Fukumura, Y.Yamada, K.Tamura, K.Nakajima, T.Aoyama,
A. Tsukazaki, M.Sumiya, S.Fuke,Y. Segawa, T.Chikyow, T.Hasegawa, H.Koinuma
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M. Kawasaki |
Magneto-Optical Spectroscopy of Anatase TiO2 Doped with Co |
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Year |
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2003 |
42 L105-L107 |
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Journal |
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角谷正友
執筆分担 |
イオン工学ハンドブック
第4章 薄膜形成技術 4.3 CVD技術 |
（株）イオン工学研究所 |
pp.314-322およびpp.330-332 |
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26
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M.Sumiya, T.Chikyo, T.Sasahara, K.Yoshimura, J.Ohta, H. Fujioka, S.Tagaya, H.Ikeya,
H.Koinuma, and
S. Fuke |
Epitaxial growth of GaN film on (La,Sr)(Al, Ta)O3 (111) substrate by MOCVD using AlN blocking layer |
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Year |
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Citations |
I.F. |
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2002 |
41, 5038-5041 |
5 |
1,280 |
25
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A. Tsukazaki, H.Saito, K.Tamura, M.Ohtani, H.Koinuma, M.Sumiya,S.Fuke,
T.Fukumura, and
M. Kawasaki, |
Systematic analysis and control of low-temperature GaN buffer layers on sapphire substrates |
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Year |
Vol. page |
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I.F. |
| Appl. Phys. Lett |
2002 |
81, 235-237 |
64 |
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24
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M. Sumiya, K.Yoshimura,
N. Ogusu, S. Fuke, K.Mizuno, M. Yoshimoto, H.Koinuma, and
L. T. Romano |
Effect of buffer layer engineering on the polarity of GaN films |
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Year |
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I.F. |
| J. Vac. Sci. Tech. A |
2002 |
20,456-458 |
8 |
1.301 |
23
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M.Sumiya, Y.Kurumasa, K.Ohtsuka, K.Kuwahara, Y.Takano, and
S. Fuke |
Reduction of defect density in GaN epilayer having barried Ga metal by metalorganic chemical vapor deposition |
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Year |
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2002 |
237-239,
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22
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J.Ohta, H. Fujioka, M.Furusawa, A.Sasaki,
M. Yoshimoto, H.Koinuma, M.Sumiya, and
M. Oshima |
CAICISS characterization of GaN films grown by pulsed laser deposition |
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Year |
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2002 |
237-239,
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23 |
1.529 |
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19
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Journal |
Vol. |
| Masri P, Pezoldt J, M. Sumiya |
Optimization of interface and interphase systems: The case of SiC and III-V nitrides |
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2 |
Vol. 389-3
pp. 733-7368 |
| 18 |
M. Takabe, M. Sumiya, and S. Fuke |
HNO3 treatment of sapphire for management of GaN polarity in MOCVD
method: Comparison of the properties of +c and ?c GaN region |
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2 |
Vol.798,
pp. 305 |
| 17 |
M. Sumiya, N. Ogusu, K. Osada, and S. Fuke |
In-situ RHEED observation of MOCVD-GaN film growth |
Mat. Res. Soc. Symp. Proc. |
Vol.693, pp.559-564 |
| 16 |
奥野浩司、桑原憲弘 角谷正友、高野泰、福家俊郎、大塚康二 |
MOCVD法によるサファイア基板上への(1010)面GaN成長 |
信学技法 |
Vol.102, pp. 45-50 |
| 15 |
Masri P, Pezoldt J,and M. Sumiya |
Physics of heteroepitaxy and heterophases |
SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS |
Vol.389-3 pp.379-38 |
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21
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D. Li, M. Sumiya,
S. Fuke,
D. Yang,
D. Que,
Y. Suzuki, and
Y. Fukuda |
Selective etching of GaN polar surfaces in potassium hydoxide solution
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Year |
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2001 |
41, 5038-5041 |
55 |
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A. Uedono,
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Z. Q. Chen, M.Sumiya, R.Suzuki, T.Ohdaira, T.Mikado,
T. Mukai, and S. Nakamura |
Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams |
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2001 |
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M. Oshima |
Epitaxial growth of AlN on (La,Sr)(Al,Ta)O3 substrate by Laser MBE |
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S. F. Chichibu,
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Impact of growth polar direction on the optical propereties of GaN grown by metalorganic vapor phase epitaxy |
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2001 |
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36 |
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RHEED and XPS study of GaN on Si(111) grown by pulsed laser deposition |
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J.Cryst.
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角谷正友
執筆分担 |
界面ハンドブック第4章 第5節 III-V族窒化物 |
エヌ･ティ･エス出版 |
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6
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角谷正友、福家俊郎 |
「MOCVD六方晶GaN薄膜成長と極性構造 |
応用物理 |
第70巻 178-182 |
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M.Sumiya, S. Nakamura,
S. F. Chichibu, K.Mizuno,
M. Furusawa, and
M. Yoshimoto |
Structural analysis of InxGa1-xN single quantum wells by coaxial impact collision ion scattering spectroscopy |
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2000 |
77, 2512-2514 |
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D. Li,
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Y. Fukuda, and
S. Fuke |
Characteristics of the GaN polar surface during an etching process in KOH |
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2000 |
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M. Sumiya, T. Ito, K.Ohtuska,
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H. Koinuma,
A.Ohtomo, and
M. Kawasaki |
Growth mode and surface morphology of GaN film deposited along N-face polar direction on c-plane sapphire substrate |
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2000 |
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Depencence of impurity incorporation of the polar direction of GaN film Growth |
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T.Makino, Y.Segawa, M.Sumiya, S.Fuke, H.Koinuma, and
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Epitaxial growth of ZnO films on lattice-matched ScAlMgO4 (0001) substrates |
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Journal |
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M. Sumiya,
S.F. Chichibu,
K. Mizuno,
M. Furusawa,
M. Yoshimoto, and
S. Nakamura, |
Correlation between optical emission and disordering of Indium in InxGa1-xN single quantum well analyzed by coaxial impact collision ion scattering spectroscopy |
IPAP Conf. Series |
Vol. 1,
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J.Ohta,
H.Fujioka,
M.Sumiya,
M.Furusawa,
M.Yoshimoto,
H.Koinuma, and M.Oshima, |
Epitaxial growth of AlN on Si(111) by laser MBE |
IPAP Conf. Series |
Vol. 1, pp.359-362 |
12
|
吉村克彦、角谷正友、
藤岡洋、福家俊郎 |
LSAT基板上GaN薄膜のエピタキシャル成長 |
信学技報 |
vol. 100, 17-21 |
11
|
田中勝治、桑原憲弘、
大塚康二、角谷正友、
高野泰、福家俊郎 |
Al層と挿入したサファイア基板上GaN成長 |
信学技法 |
vol. 100, 23-28 |
|
| 5 |
Authors |
Title |
Journal |
Vol.page |
角谷正友、大西剛、
伊藤孝浩、福家俊郎 |
同軸型直衝突イオン散乱分光法による窒化物半導体の極性評価 －GaN薄膜堆積プロセスと成長方位との相関― |
表面科学 |
第21巻 142-147 |
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11
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Authors |
Title |
Link |
M. Sumiya,
T. Ohnishi,
M. Tanaka,
I. Ohkubo,
M. Kawasaki,
M. Yoshimoto,
H. Koinuma
K. Ohtsuka and S. Fuke
|
Analysis of the polar direction of GaN film growth by coaxial impact collision ion scattering sepectroscopy |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
| Appl. Phys. Lett |
1999 |
75,674-676 |
73 |
4.184 |
10
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Authors |
Title |
Link |
M. Sumiya,
T. Ohnishi,
M. Tanaka,
M. Kawasaki,
M. Yoshimoto,
H. Koinuma
K. Ohtsuka and S. Fuke
|
Controlling the Polarity and surface morphology of GaN films deposited
on c-plane sapphire |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
| MRS Internet J. Nitride Semicond |
1999 |
Res.4S1,
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3.293 |
9
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Title |
Link |
T. Ito,
M. Sumiya,
Y. Takano,
K. Ohtsuka, and S. Fuke
|
Influence of thermal annealing on GaN buffer layers and the properies of subsequent GaN layers grwon by metalorganic chemical vapor deposition |
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| Journal |
Year |
Vol. page |
Citations |
I.F. |
| Jpn. J. Appl. Phys |
1999 |
38,649-653 |
46 |
1.411 |
8
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Authors |
Title |
Link |
T. Ito,
K. Ohtsuka,
K. Kuwahara,
M. Sumiya,
Y. Takano, and S. Fuke
|
Effect of AlN buffer layer deposition conditions on the properties of GaN layer |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
| J. Crys. Growth |
1999 |
205, 20-24 |
12 |
1.492 |
7
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Authors |
Title |
Link |
K.Miyazaki, H.Fujioka, H.Shinno, N.Matsuki, H.N.Aier, M.Sumiya, M.Oshima, and H.Koinum
|
Device simulation and fabrication of field effect solar cell |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
| ulletin of Materials Science |
1999 |
22, 726 |
0 |
0.319 |
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| 4 |
Authors |
Title |
Journal |
Vol.page |
| 角谷正友、福家俊郎 |
GaN薄膜の成長方位制御の制御と特性の極性依存性 |
応用電子物性分科会会誌 |
第5巻 203-208 |
|
6
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Authors |
Title |
Link |
M. Sumiya,
H. Enomoto,
S. Fuke,
T. Kato,
S.S. Lee,
O. Takai, A. Fejfar,
J. Kocka and H. Koinuma |
Properties of amorphous carbon films characterized by laser desorption time of flight mass spectroscopy |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
| J. Non-Crys Solids |
1998 |
227-230, 632-635 |
1 |
|
5
|
Authors |
Title |
Link |
H. Fujioka,
M. Oshima,
C. Hu,
M. Sumiya,
K. Miyazaki, and H. Konimua
|
Characteristics of field effect a-Si:H solar cells |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
| J. Non-Crys Solids |
1998 |
227-230, 1287-1290 |
1 |
|
4
|
Authors |
Title |
Link |
A. Ohtomo,
M. Kawasaki ,
T. Koida,
H. Koinuma,
Y. Sakurai,
Y. Yoshida,
M. Sumiiya,
S. Fuke,
T. Yasuda and Y. Segawa
|
Double heterostructure based on ZnO and MgxZn1-xO |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
SILICON CARBIDE,
III-NITRIDES AND RELATED
MATERIALS, PTS 1 AND 2
MATERIALS SCIENCE
FORUM |
1998 |
Vol. 264-268
pp.1463-1466 |
23 |
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| |
10
|
Authors |
Title |
Journal |
Vol. |
M. Sumiya, T. Ohnishi,
H. Teshigawara, M. Tanaka, I. Ohkubo, M. Kawasaki,
M. Yoshimoto, K. Ohtsuka, H. Koinuma and S. Fuke |
CAICISS analysis of GaN films grown on sapphire substrate by MOCVD method
|
Proc. of 2nd Intern. Symp. on Blue laser and Light |
p.339-342 |
9
|
T. Ito, K. Ohtsuka,
K. Kuwahara, M. Sumiya,
Y. Takano, and S. Fuke |
Effects of substrate nitridation and AlN buffer layer on the properties
of GaN on sapphire |
Proc. of 2nd Intern. Symp. on Blue laser and Light Emitting Diodes, Chiba,
Japan |
p.178-181 |
8
|
S.Yasuda, H.Fujioka, M.Sumiya, N.Matsuki, R.Maruyama, and H.Koinuma |
Deposition of Si film by pulsed laser ablation |
Proceedings of the first NIMC International Symposium on Photoreaction
Control and Photofunctional Materials |
pp. 197 |
7
|
N. Matsuki, H. Fujioka,
M. Oshima, M. Sumiya,
R. Maruyama, S. Yasuda,
Y. Hishitani, and H. Koinuma |
Fabrication of dielectric oxide/a-Si:H junction for field effect solar
cell |
Proceedings of the first NIMC International Symposium on Photoreaction Control and Photofunctional Materials |
pp. 129 |
| 6 |
A. Ohtomo, M. Kawasaki,
T. Koida, H. Koinuma,
Y. Sakurai, Y. Yoshida,
M. Sumiya, S. Fuke,
T. Yasuda, and Y. Segawa |
Double heterostructure based on ZnO and MgxZn1-xO |
Proc. of Intl. conf. on SiC, III-nitirde and related mat. Material Science
Forum |
pp. 1463 |
| 5 |
Y. Zhoa, M. Sumiya,
G. Lai, P. Cao and S. Fuke |
Theoretical Study of the dependence of Mg incorporation on the polarity
of GaN film |
Proc. of Joint International Conference on Advanced Science and Technology, Hamamatsu, Japan |
pp.157-160 |
|
|
 |
| |
| 4 |
Authors |
Title |
Journal |
Vol. |
石原剛、伊藤孝浩、
大塚康二、今井哲治、
桑原憲弘、角谷正友、
高野泰、福家俊郎 |
InGaNバッファ層を用いたGaAs(100)基板上InGaN成長 |
電子情報通信学会 |
CPM97-57, pp. |
3
|
H. Fujioka, M. Oshima,
C. Hu, M. Sumiya,
K. Miyazaki and H. Koinuma |
2-dimensinal device sumulation of field effect a-Si:H solar cell |
Proc. of14th European Photovoltaic Solar Energy Conferance |
pp.2518 |
2
|
M. Sumiya, T. Kato,
M. Kawasaki and H. Koinuma |
Quantitative Evaluation of Photovoltaic Silicon Materials by Laser Desorption
Time of Flight Mass Analysis |
roc. of14th European Photovoltaic Solar Energy Conferance |
pp. 1795 |
1
|
H. Koinuma, R. Maruyama, M. Sumiya , H. Fujioka,
M. Oshima,
A. Fejfar and J. Kocka |
Concept and Fabrication of Field Effect Solar Cell |
Proc. of14th European Photovoltaic Solar Energy Conferance |
pp. 2507
|
|
| 3 |
Authors |
Title |
Journal |
Vol.page |
| 角谷正友 |
レーザー脱離飛行時間質量分析法によるアモルファス物質の光誘起変化の解析 |
第24回アモルファス物質の物性と応用セミナーテキスト |
24巻 p157-161 |
| 2 |
鯉沼秀臣
角谷正友 |
アモルファスシリコンの光誘起変化 -レーザー脱離飛行時間質量分析による解析 |
応用物理 |
第66巻 1089-1093 |
|
3
|
Authors |
Title |
Link |
M. Sumiya,
M. Kawasaki,
J. Kocka, and H.Koinuma
|
Fabrication of highly stable and low defect density amorphous silicon films
at low substrate temperature by plasma CVD assited with piezoelectric vibration |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
| Jpn. J. of Appl. Phys |
1995 |
34 L97-L100 |
3 |
|
2
|
Authors |
Title |
Link |
N. Naitoh,
A. Takano,
M. Sumiya,
M. Kawasaki, and H. Koinuma
|
In situ optical diagnosis on hydrogenated amorphous silicon grown by vibration
superimposed plasma chemical vapor deposition |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
| Appl. Phys. Lett |
1995 |
66 1071-1073 |
2 |
|
1
|
Authors |
Title |
Link |
H. Koinuma,
A. Takano, and M. Sumiya
|
Continuous production of a-Si:H/a-SiN:H superlattice by pulsed plasma and photo CVD |
|
| Journal |
Year |
Vol. page |
Citations |
I.F. |
| J. of Non-Crys |
1991 |
Solids 137&138 1127-1130 |
4 |
|
|
| 1 |
Authors |
Title |
Journal |
Vol.page |
| 角谷正友 |
光誘起欠陥への新しい切り口：TIme of Flight質量分析法 |
第２３回アモルファス物質の物性と応用セミナー テキスト |
p82-87 |
1995 |
|
|
| 15 |
名称 |
発明者 |
| シリコン生成方法 |
角谷正友、鯉沼秀臣、石垣隆正、秋月智大 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2010-044982 |
NIMS |
2010.3.2 |
|
| 14 |
名称 |
発明者 |
| ショットキー型接合素子とこれを用いた光電変換素子及び太陽電池 |
松木伸行、色川芳宏、伊高健治、鯉沼秀臣、角谷正友 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| PCT/JP2010/055574 |
NIMS・中部大学 |
2009.3.29 |
|
| 13 |
名称 |
発明者 |
| ワイドギャップ半導体のバンドギャップ電子物性の計測方法 |
中野由崇，松木伸行，色川芳宏，角谷正友 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2009-233602 |
NIMS・中部大学 |
2009.10.7 |
|
| 12 |
名称 |
発明者 |
| ショットキー型接合素子とこれを用いた光電変換素子及び太陽電池 |
松木伸行、色川芳宏、伊高健治、鯉沼秀臣、角谷正友 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2009-077948 |
NIMS・中部大学 |
2009.3.27 |
|
| 11 |
名称 |
発明者 |
| 酸化亜鉛薄膜の成形方法 |
角谷正友、藤本英司、渡邊賢司、ミックリップマ、大西 剛、鯉沼秀 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2007-080250 |
NIMS・中部大学 |
|
|
| 10 |
名称 |
発明者 |
| 真空プロセス用装置 |
角谷正友、ミック・リップマー、大西剛、藤本英司、鯉沼秀臣 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2006-202634 |
NIMS・東京大学 |
2006.7.25 |
|
| 9 |
名称 |
発明者 |
| 光電面及び光検出器 |
角谷正友、福家俊郎、二橋得明、萩野實 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2006-202634 |
静岡大学、浜松ホトニクス |
2005.12.12 |
|
| 8 |
名称 |
発明者 |
| サファイア基板上への窒化物薄膜の製造方法および窒化物薄膜装置 |
角谷正友、福家俊郎 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2005-084264 |
静岡大学、科学技術振興機構 |
2005.3.23 |
|
| 7 |
名称 |
発明者 |
| 基板上への窒化物薄膜の成長方法および窒化物薄膜装置 (国際出願) |
角谷正友、福家俊郎 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| PCT/JP2004/008351 |
静岡大学
科学技術振興機構 |
2004.6.15 |
US 7,820,246 B2
Oct. 26, 2010 |
| 6 |
名称 |
発明者 |
| 層状部材の製造方法および層状部材 |
二橋得明、角谷正友、荻野實、福家俊郎 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2004-071011 |
浜松ホトニクス、静岡大学 |
2004.3.12 |
|
| 5 |
名称 |
発明者 |
| 基板上への窒化物薄膜の成長方法および窒化物薄膜装置 |
角谷正友、福家俊郎、高部本規 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2003-189457 |
静岡大学
科学技術振興機構 |
2003.7.1 |
特許第4342853号
2009.7.17 |
| 4 |
名称 |
発明者 |
| GaN光触媒 |
鯉沼秀臣、松本祐司、角谷正友、中島和子、福家俊郎 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特願2004-079110 |
東京工業大学、科学技術振興機構 |
2004.3.18 |
|
| 3 |
名称 |
発明者 |
| 金属層上にエピタキシャル成長した半導体層を形成する方法及びこの方法を用いて製造した光放出半導体デバイス |
角谷正友、吉本護、福家俊郎 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特平願10-077140号4 |
静岡大学 |
2006.7.25 |
US 6,239,005 B1 (2001. 5.29) |
| 2 |
名称 |
発明者 |
| 化合物半導体の製膜方法 ；工業所有権 |
角谷正友、小川真吾、福家俊郎 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特平願10-096945号 |
静岡大学 |
|
|
| 1 |
名称 |
発明者 |
| 被膜形成方法および被膜形成装置 |
鯉沼秀臣、川崎雅司、角谷正友 |
| 出願番号 |
出願者 |
出願日 |
登録 |
| 特許平4-267932号 |
東京工業大学 |
|
US patent, Serial
No 08/118, 829 |
|
|
1998年 角谷正友 第５回応用物理学会講演奨励賞
｢CAICISSによるサファイア基板上GaN薄膜の成長方位の観察｣
2002年 角谷正友 第16回高柳研究奨励賞
｢窒化物半導体薄膜の成長と極性構造の解明｣
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