MEMRISYS 2021 - Invited Speakers

Honorary Speaker

  • Leon Chua
    University of California, Berkeley

    Why brains need memristors blessed with an ‘Edge of Chaos’ kernel?

Plenary Speakers

  • Evangelos Eleftheriou
    Axelera AI, Zurich

    Computational
    phase-change memory

  • Masanori Hashimoto
    Kyoto University

    Via-switch FPGA with transistor-free programmability enabling near-memory parallel computation

  • Ru Huang
    Peking University

    Memristive dynamics enabled hardware elements and circuits for neuromorphic computing

  • Themis Prodromakis
    University
    of Southampton

    Environmental effects in RRAM -
    tools, models, and applications

  • Kazuya Terabe
    National Institute
    for Materials Science

    Ionic nanoarchitectonics for exploring memristive characteristics

  • R. Stanley Williams
    Texas A&M
    University

    Dynamically active memristors at the 'Edge of Chaos': pulse amplification, computation and data transmission

Invited Speakers

  • Megumi Akai-Kasaya (Osaka University)
  • Masashi Aono (Keio University)
  • Tetsuya Asai (Hokkaido University)
  • Jun Deguchi (Kioxia Corporation)
  • Regina Dittmann (Forschungszentrum-Jülich)
  • James K. Gimzewski (University of California, Los Angeles)
  • Xin Guo (Huazhong University of Science and Technology)
  • Taro Hitosugi (Tokyo Institute of Technology)
  • Cheol Seong Hwang (Seoul National University)
  • Daniele Ielmini (Politecnico di Milano)
  • Isao Inoue (National Institute of Advanced Industrial Science and Technology)
  • Doo Seok Jeong (Hanyang University)
  • Teruo Kanki (Osaka University)
  • Jeehwan Kim (Massachusetts Institute of Technology)
  • Kentaro Kinoshita (Tokyo University of Science)
  • Yiyang Li (University of Michigan)
  • Wei Lu (University of Michigan)
  • Stephan Menzel (Forschungszentrum-Jülich)
  • Xiangshui Miao (Huazhong University of Science and Technology)
  • Paolo Milani (University of Milano)
  • Tomonobu Nakayama (National Institute for Materials Science)
  • Akiyo Nomura (IBM Research – Tokyo)
  • Carlo Ricciardi (Politecnico di Torino)
  • Toshiharu Saiki (Keio University)
  • Toshitsugu Sakamoto (NanoBridge Semiconductor, Inc.)
  • Akihito Sawa (National Institute of Advanced Industrial Science and Technology)
  • Ivan K. Schuller (University of California, San Diego)
  • Da-Shan Shang (Institute of Microelectronics)
  • Shoso Shingubara (Kansai University)
  • Georgios Sirakoulis (Democritus University of Thrace)
  • John Paul Strachan (Forshungszentrum-Jülich)
  • Hirofumi Tanaka (Kyushu Institute of Technology)
  • Ronald Tetzlaff (Technische Universität Dresdeny)
  • Takashi Tsuchiya (National Institute for Materials Science)
  • Ilia Valov (Forschungszentrum-Jülich)
  • Rainer Waser (RWTH Aachen)
  • Satoshi Watanabe (The University of Tokyo)
  • Wilfred G. van der Wiel (University of Twente)
  • Huaqiang Wu (Tsinghua University)
  • Qiangfei Xia (University of Massachusetts at Amherst)
  • Joshua Yang (University of Southern California)
  • Rui Yang (Huazhong University of Science and Technology)
  • Yuchao Yang (Peking University)

Special Speaker for IRDS Session

  • An Chen (IBM Research)

Special Speakers for Editorial Session

  • Olga Bubnova (Senior Editor, Nature Nanotechnology)
  • Ian Forbes (IOP Publishing)
  • Jos Lenders (Advanced Materials)
  • Hakim Meskine (Advanced Electronic Materials)
  • Matthew Parker (Associate Editor, Nature Electronics)


Note: This speaker list will be updated continually.