Publication
Carbon-Nitrogen-Oxygen Defect Complexes Proposed as the Origin of Telecom Emitters in Silicon
ICYS Research Fellow Dr. Peter UDVARHELYI
【Key Points of This Research】
This study provides a coherent computational framework for interpreting the N-series photoluminescence lines in silicon. It identifies the compact carbon-nitrogen interstitial pair defect as a strong candidate for the N1 emitter. Related complexes involving interstitial silicon and oxygen reproduce key experimental trends for the higher-energy lines.
【Title of the Paper】
First-principles insights into the atomic structure of carbon-nitrogen-oxygen complex color centers in silicon【Publication Details】
This research was presented by Dr. Peter Udvarhelyi, ICYS Research Fellow.
Phys. Rev. B 114, 115118
DOI:https://doi.org/10.1103/dnv9-dclq