論文発表
Carbon-Nitrogen-Oxygen Defect Complexes Proposed as the Origin of Telecom Emitters in Silicon
ICYSリサーチフェロー Dr.Peter UDVARHELYI
【研究のポイント】 This study provides a coherent computational framework for interpreting the N-series photoluminescence lines in silicon. It identifies the compact carbon-nitrogen interstitial pair defect as a strong candidate for the N1 emitter. Related complexes involving interstitial silicon and oxygen reproduce key experimental trends for the higher-energy lines.
【論文名】
First-principles insights into the atomic structure of carbon-nitrogen-oxygen complex color centers in silicon【論文掲載情報】
This research was presented by Dr. Peter Udvarhelyi, ICYS Research Fellow.Phys. Rev. B 114, 115118
DOI: https://doi.org/10.1103/dnv9-dclq