Atomic Diffusion through Threading Dislocations in InGaN Quantum Wells
This example involves the compositional and structural analysis of threading dislocations passing through InGaN/GaN quantum well structures, performed using correlative transmission electron microscopy (TEM) and atom probe tomography (APT). By analyzing the same threading dislocation in the identical field of view with both TEM and APT, it was revealed that indium atoms diffuse along the dislocation, and their concentration gradually decreases with distance from the InGaN layer. This represents a direct observation of indium atoms originating from the InGaN layer diffusing toward the epitaxial GaN surface via the threading dislocation, which is thought to occur through pipe diffusion induced by strain energy relaxation.
- Y. Yamaguchi, Y. Kanitani, Y. Kudo, J. Uzuhashi, T. Ohkubo, K. Hono, and S. Tomiya, "Atomic Diffusion of Indium through Threading Dislocations in InGaN Quantum Wells", Nano Lett. 22, 6930–6935 (2022)