Self-Assembled InAs/InGaAlAs Quantum Dots
Self-assembled quantum dots are regarded as promising candidates for photoelectric and photovoltaic devices. Since quantum dots are nanostructures with strongly correlated structural parameters, comprehensive evaluation at the atomic level is essential for improving device performance. In this study, scanning transmission electron microscopy (STEM) and atom probe tomography (APT) were used complementarily to evaluate structural parameters such as the shape, strain, and composition of self-assembled InAs quantum dots and InGaAlAs spacer layers. Complementary analysis using STEM and APT demonstrated that clarifying the mechanisms of self-organization phenomena at the atomic level can accelerate the development of quantum dots.
- Y. Yamaguchi, Y. Inaba, R. Arai, Y. Kanitani, Y. Kudo, M. Shiomi, D. Kasahara, M. Yokozeki, N. Fuutagawa, J. Uzuhashi, T. Ohkubo, K. Hono, K. Akahane, N. Yamamoto, and S. Tomiya, "Atomic-Scale Multimodal Characterization of Self-Assembled InAs/InGaAlAs Quantum Dots", J. Phys. Chem. Lett. 15, 3772-3778 (2024)