NIMS/Research Center for Electronic and Optical Materials

Main Content

Research and development at this center
[Methods and technologies (synthesis and processing)]

The page for [Measurements and characterization]is here (Link)

The technologies used at this center can be broadly divided into synthesis/manufacturing technology and evaluation analysis technology.

This page specifically focuses on synthesis and processing methods.Method for measurements and characterization is at Measurements and characterization page.

There is also a wide range of synthesis and processing technologies. First, it is a means of obtaining the desired material by reacting or melting substances at high temperatures, using a so-called "furnace." On the other hand, it is a means of synthesizing materials at relatively low temperatures, that is, using chemical methods that can be imaged from beakers or flasks.It provides a means of synthesizing substances from liquids such as aqueous solutions. There are also processes that use liquids and do not involve a dissolution step. An example of this is the process of dispersing powder into a liquid. Dispersion processes are of great importance in materials synthesis.

Another method is to synthesize materials by depositing vaporized raw materials as solids on a substrate. This process of precipitating a solid phase from a gas phase is often used for high-purity synthesis in a vacuum environment. Furthermore, this center will utilize shape forming technology such as microfabrication technology for device formation.

We also have equipment available for use by outside organizations. If you are interested, please inquire.

Solid and melt processes / high temperature processes

We will introduce manufacturing processes that use high temperatures, such as solid phase reactions and melt processes, at this center.

Bulk single crystal growth

It is a process that produces large single crystals from melted liquid at high temperatures.

Production of large, high-quality single crystals for optical applications using the pulling method
Group in charge:Optical Single Crystals GroupSHIMAMURA, KiyoshiVILLORA, GarciaYUAN, Dongsheng

Single crystal growth using Bridgman method etc.
Group in charge:Optical Single Crystals GroupNAKAMURA, Masaru

Sintering

This is the process of creating ceramics by densifying powder at high temperatures.

Fabrication of transparent ceramics using sintering technology
Group in charge:Optical Ceramics GroupSUZUKI, Tohru
Group in charge:Polycrystalline Optical Material GroupMORITA, Koji

High temperature gas reaction

This is a synthesis method that involves reacting a solid at high temperature with a gas. A typical example is nitride synthesis using ammonia.

Synthesis of nitrides and oxynitrides through high-temperature reactions
Group in charge:Advanced Phosphor GroupTAKEDA, Takashi
Group in charge:Electro-ceramics GroupSUEHIRO, TakayukiSEGAWA, Hiroyo Group in charge:Amorphous Material GroupSEGAWA, Hiroyo

Page top /Organization / Staff / Materials / Characterization and measurements

We would like to introduce the liquid phase process at this center.

Colloid process

This is a process for controlling the behavior of fine particles dispersed in a liquid to bring out material properties.

Ceramic particle orientation control using field
Group in charge:Optical Ceramics GroupSUZUKI, Tohru

Production of photonic colloid sheets from suspensions
Group in charge:Nanophotonics GroupFUDOUZI, Hiroshi

Precipitation from solution

溶Solid-phase materials are synthesized by precipitating raw materials dissolved in a solvent.

Precipitation of nanoparticles with controlled particle shape from solution
Group in charge:Electro-ceramics groupSAITO, Noriko

Hydrothermal synthesis method: Crystal precipitation from aqueous solution in critical state
Group in charge:Optical Ceramics GroupNAKANE, Takayuki

Sol-gel method
Group in charge:Amorphous materials groupSEGAWA, Hiroyo

Electrochemical synthesis method

A synthesis method that induces chemical reactions and mass transport by applying an electric field to the interface between a solution and a solid.

Formation of film by anodic oxidation of metal
Group in charge:Amorphous materials groupSEGAWA, Hiroyo

Page top /Organization / Staff / Materials / Characterization and measurements

We will introduce vapor phase growth at this center.

Molecular beam epitaxy (MBE)

This is a process in which raw materials are vaporized in a vacuum and then deposited and crystallized on a wafer.

Formation of quantum dots and quantum wells
Group in charge:Semiconductor Epitaxial Structures GroupMANO, TakaakiHTAKE, AkihiroKAWAZU, Takuya

Crystal growth of nitride semiconductors
Group in charge:Electro-ceramics groupOGAKI, Takeshi

Chemical vapor deposition (CVD)

This is a process in which raw material molecules carried by a gas flow react on the substrate surface and precipitate and crystallize.

Formation of semiconductor thin film by vapor phase growth
Group in charge:Semiconductor Defect Design GroupTERAJI, Tokuyuki; WATANABE, Kenji
Group in charge:Ultra-wide Bandgap Semiconductors GroupKOIZUMI, SatoshiLIAO, Meiyong

Hydride vapor phase epitaxy (HVPE)

This is a crystal growth method in which raw metal is transported onto a substrate as chloride gas and crystals are deposited on the substrate.
Group in charge:Ultra-wide Bandgap Semiconductors GroupOSHIMA, Yuichi

Pulsed laser deposition (PLD)

This is a thin film growth process in which raw materials evaporated by laser pulse irradiation are deposited and crystallized on a substrate wafer.

Formation of semiconductor thin films and dielectric thin films by PLD method
Group in charge:Electro-ceramics groupADACHI, Yutaka; SHIMIZU, Takao; OHSAWA, Takeo
Group in charge:Nano Electronics Device Materials GroupNAGATA, Takahiro

sputtering deposition

Raw materials vaporized using plasma are deposited on a wafer to grow crystals and synthesize thin film crystals.

Formation of semiconductor thin films and dielectric thin films by sputtering method
Group in charge:Electro-ceramics groupSHIMIZU, Takao; OHSAWA, Takeo
Group in charge:Nano Electronics Device Materials GroupNAGATA, Takahiro

Page top /Organization / Staff / Materials / Characterization and measurements

Fabrication processes used in this center

Lithography

It is a process in which fine structures are formed on the surface of a wafer or thin film using pattern formation on a resist film using electron beams or light.

Formation of metamaterials by lithography
Group in charge:Nanophotonics GroupIWANAGA, Masanobu
Group in charge:Semiconductor Epitaxial Structures GroupMIYAZAKI, Hideki

Formation of waveguide type nonlinear optical element by lithography
Group in charge:Nanophotonics GroupKURIMURA, Sunao

Etching

This method uses acid/alkaline solutions, plasma, etc. to remove the sample surface by dissolving or evaporating it and giving it the desired shape.

Etching technology that does not use plasma
Group in charge:Ultra-wide Bandgap Semiconductors GroupOSHIMA, Takayoshi; IWANAGA, Masanobu

Strong magnetic field application

By applying a magnetic field to powder, etc., particle aggregation and orientation are controlled.

Particle motion control using magnetic fields
Group in charge:Optical Ceramics GroupHIROTA, Noriyuki; SUZUKI, Tohru

Page top /Organization / Staff / Materials / Characterization and measurements

Site Map

Research Center for Electronic and Optical Materials

Contact

Addministration Office

Research Center for Electronic and Optical Materials

National Institute for Materials Science

1-1 Namiki, Tsukuba, 305-0044 Japan

Phone:+81-(0)029-860-4867

Email:kinou-Inquiry@ml.nims.go.jp