Semiconductor Epitaxial Structures Group

STAFF

MANO, Takaaki; OHTAKE, Akihiro; KAWAZU, Takuya; HAYASHI, Yusuke; MIYAZAKI, Hideki T.（Staff Tabs）

AIM and GOAL

III-V compound semiconductor heterostructures are used in various familiar applications, such as light emitting devices, sensing devices, and high-frequency devices. Toward the realization of ioT society in near future, it is necessary to (1) further improve their performance, (2) explore novel functionalities, and (3) realizing price reduction of high quality devices. Our challenges for solving those issues are developments of novel semiconductor heterostructures by using advanced epitaxial growth techniques.

APPROACH

In this group, we will develop advanced epitaxial-growth techniques of compound semiconductor materials (mainly III-V) and realize innovative hetero-epitaxial structures. By utilizing the surface-, interface-, and quantum-properties in the structures, we will explore novel optoelectronic functionalities toward the next generation quantum- or ioTdevices, such as quantum light emitters and advanced sensing devices.

FIG１ Schematic drawing of droplet epitaxy method and scanning probe microscopy images of GaAs and InAs quantum nanostructures grown by the method.

FIG２ Cross-sectional TEM imaged of various semiconductor heterostructures grown by using advanced epitaxial growth techniques.

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