Photodetection in electrolyte-gated transistors of two-dimensional crystals
#Photodetection #P-N Junctions #Electrolyte Gate
p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals. © 2016 AIP Publishing LLC
Our research group has developed Photodetection in p–n Junctions Formed by Electrolyte-Gated Transistors of Two-Dimensional Crystals. We focus on transition metal dichalcogenide monolayers, known for their strong light absorption and excellent electronic properties. Our work involves the preparation of electrolyte-gated ambipolar transistors and the formation of electrostatic p–n junctions at 270 K. We observed a reasonable photocurrent spectra without external bias, indicating the formation of p-n junctions. Interestingly, two-terminal devices exhibit higher photoresponsivity than three-terminal ones, suggesting the formation of highly balanced anion and cation layers. Our findings provide important evidence for optoelectronics in atomically thin crystals.
Photodetection in p–n junctions formed by electrolyte-gated transistors of two-dimensional crystals.
Daichi Kozawa, Jiang Pu, Ryo Shimizu, Shota Kimura, Ming-Hui Chiu, Keiichiro Matsuki, Yoshifumi Wada, Tomo Sakanoue, Yoshihiro Iwasa, Lain-Jong Li, Taishi Takenobu.
Applied Physics Letters, 109, 201107 (2016). 10.1063/1.4967173ionic