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Double beam FIB–SEM hybrid system |
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Product |
Xvision200 |
Manufacturer |
SII Nanotechnology Corporation |
Capabilities |
FIB-gun Colum
Liquid Ga metal ion source
Acceleration voltage: 1 ～ 30kV (5kV step)
Maximum current density: 30A/cm2
Maximum scanning area: 2.0mm square
Image resolution: 4nm (acceleration voltage: 30kV)
EB-gun Colum
ZrO/W field emission type emitter
Acceleration voltage: 1 ～ 30kV
Maximum scanning area: 2.0mm square
Image resolution: 3nm (acceleration voltage: 5kV)
Sample Stage: X: 0 ～ 205mm Y: 0 ～ 205mm Z: 0 ～ 10mm θ: 360deg. T: -5 ～ +60deg.
Substrate sizes: 6" wafer, less than 3" wafer
Gas system for deposition ( Carbon )
Micro-probing system
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【Applications】 |
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Fabrication of TEM sample |
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FIB system |
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Product |
SMI9800SE |
Manufacturer |
SII Nanotechnology Corporation |
Capabilities |
FIB-gun Colum
Liquid Ga metal ion source
Acceleration voltage: 15 ～ 30kV
Maximum current density: 10A/cm2
Maximum scanning area: 2.4mm square
Image resolution: 12nm (acceleration voltage: 30kV)
EB-gun Colum
ZrO/W field emission type emitter
Acceleration voltage: 0.5 ～ 25kV
Maximum scanning area: 1.0mm square
Image resolution: 3nm (acceleration voltage: 25kV), 10nm (acceleration voltage: 1kV)
Sample Stage: X: 0 ～ 200mm Y: 0 ～ 200mm Z: 0 ～ 14mm θ: 360deg. T: 0 ～ 90deg.
Substrate sizes: less than 8“ wafer
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Field emission–scanning electron microscope(FE–SEM) |
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Product |
S-4800 |
Manufacturer |
Hitachi High-Technologies Corporation |
Capabilities |
EB gun: ZrO/W field emission type
Irradiation voltage: 0.5 ～ 30kV （normal mode）, 0.1 ～ 2.0kV (retarding mode)
Resolution: 1.0nm @ 15kV (normal mode), 1.4nm @ 1.0kV (retarding mode), 2.0nm @ 1.0kV (normal mode)
Magnifications: 20 ～ 800,000
Sample stage moving area: X: 0 ～ 110mm Y: 0 ～ 110mm Z: 1.5 ～ 40mm R: 360deg. T: -5 ～ +70deg.
Maximum wafer size: 6“ wafer |
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Coating system |
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Product |
E-1045 |
Manufacturer |
Hitachi High-Technologies Corporation |
Capabilities |
Metallurgical coating unit
Maximum voltage: DC 0.4kV
Maximum current: DC 40mA
Target material: Pt
Pressure: 7～20Pa
Timer: 5～300sec
Maximum sample size: diameter 60mm, height 20mm
Carbon coating unit
Voltage: AC 20V, 20A max
Target: Carbon
Distance between Target and Substrate: 50～80mm
Maximum sample size: diameter 60mm, height 20mm
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Atomic force microscope(AFM) |
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Product |
L-traceⅡ |
Manufacturer |
SII Nanotechnology Corporation |
Capabilities |
Resolution: vertical 0.01 nm, surface 0.5 nm
Maximum wafer size: 6" ( thickness: 22 mm )
Scanning area: 90um
Sample moving area: X: ±75mm, Y: +105, -5mm, Z: 22mm
Scanning mode: AFM, FFM, DFM, PM, SIS
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【Applications】 |
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Observation of single carbon nanotube |
Observation of line pattern |
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Auto ellipsometer |
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Product |
MARY-102FM |
Manufacturer |
－ |
Capabilities |
Method : Rotating retarder method
Light source: 0.8mW He-Ne laser ( wavelength 632.8nm)
Beam diameter: 0.8mmφ
Incident angle: 50, 60, 70deg.
Accuracy: Δ=±0.01deg., Ψ=0.01deg.
Resolution: thickness 0.1Å
Sample stage: auto X, Y, θ
Moving area: ±50mm
XY drive resolution : 0.01mm
Maximum wafer size: 6“ wafer |
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Surface profiler |
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Product |
Alpha-Step IQ |
Manufacturer |
KLA-Tencor Corporation |
Capabilities |
Resolution: 1.19pm (±10um range) ／ 23.8pm (400um range)
Maximum wafer size: 6“ wafer
Scan length: 10mm
Measurement range of thickness: ～400um
Repeatability: 8Å@1 sigma (guaranteed)
Moving area: X 150mm, Y 80mm, θ 360deg.
Sampling rate: 2,5, 10, 20, 50, 100, 200um/s |
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3D-measurement laser microscope (operated by LCnet Project) |
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Product |
LEXT OLS4000 |
Manufacturer |
Olympus Corporation |
Capabilities |
It is possible to...
1. get high resolution images by a 405nm semiconductor laser
2. observe bright-field images by a white light source
3. perform a differential interference observation by both laser and white light source
4. use for any samples of varied sizes, materials, and shape.
5. perform non-contact 2D and 3D measurements.
6. obtain accurate measured values. (2D: < ±2%, 3D: < 0.2+L /100um) |
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