A paper on giant tunnel magnetoresistance effect by Dr. Scheike et al. published in Applied Physics Letters has been selected as an Editor’s Pick.
2022.01.24
A paper entitled "Enhanced tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) magnetic tunnel junctions" published in Applied Physics Letters by T. Scheike, a previous post-doc researcher and H. Sukegawa, Principal Researcher in Spintronics Group, et al. has been selected as an Editor’s Pick of Applied Physics Letters.
"Enhanced tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) magnetic tunnel junctions" by Thomas Scheike, Zhenchao Wen, Hiroaki Sukegawa, and Seiji Mitani, Appl. Phys. Lett. 120, 032404 (2022). (Open access)
https://doi.org/10.1063/5.0082715
"Enhanced tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) magnetic tunnel junctions" by Thomas Scheike, Zhenchao Wen, Hiroaki Sukegawa, and Seiji Mitani, Appl. Phys. Lett. 120, 032404 (2022). (Open access)
https://doi.org/10.1063/5.0082715
[Left] Film structure of developed tunnel magnetoresistance (TMR) device. [Right] TMR curve at room temperature (300 K) and low temperature (10 K).
Thomas Scheike, former Postdoctoral Fellow, Hiroaki Sukegawa, Principal Researcher and coauthors (Spintronics Group) achieved giant tunnel magnetoresistance (TMR) ratio of 429% at room temperature and 1034% at low temperature using a TMR device with an iron (Fe)/magnesium aluminum oxide (Mg4Al-Ox)/Fe structure. These giant values were obtained by developing a new spinel-based barrier, Mg4Al-Ox, in place of a conventional MgO barrier. This study will accelerate researches of spintronic applications such as large-capacity non-volatile magnetic memory (MRAM) and highly-sensitivity magnetic sensors. (Hiroaki Sukegawa)