Research Topics 2012

Development of Synaptic Devices that change operations in response to their immediate environment

Expectation placed on the development of Neuro-Computers that interact with people and environments

May 24, 2012

The Atomic Electronics Group, one of the research groups at the International Center for Materials Nanoarchitectonics (MANA)/National Institute for Materials Science (NIMS), in collaboration with the University of California, Los Angeles, has succeeded in the development of synaptic devices with environment-dependent operational characteristics. The research result is expected to contribute to the development of new type of neuro- computers surpassing the capabilities of conventional computers.

Further information

Publications and Affiliation

Alpana Nayak¹, Takeo Ohno¹, Tohru Tsuruoka¹, Kazuya Terabe¹, Tsuyoshi Hasegawa^1*, James K. Gimzewsk^{2, 3} and Masakazu Aono¹, "Controlling the synaptic plasticity of a Cu₂S gap-type atomic switch", Advanced Functional Materials, published online on May 24 (2012).

1. International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS)
2. Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), USA
3. California NanoSystems Institute (CNSI), University of California, Los Angeles (UCLA), USA
* corresponding author, e-mail address: HASEGAWA.Tsuyoshinims.go.jp

Related Links

NIMS Press Release

JST Press Release

Figure. (a) In a biological synapse, the arrival of an action potential releases neurotransmitters that assist ion channels for signal transmission. Frequent stimulation by action potential results in a persistent increase in the synaptic connection. (b) Schematic illustration of a Cu₂S gap-type atomic switch in sensory memory (SM), short-term memory (STM), and long-term memory (LTM) states depending on the interval (T) of the input voltage pulse stimulation.

Figure

Figure 1. (a) In a biological synapse, the arrival of an action potential releases neurotransmitters that assist ion channels for signal transmission. Frequent stimulation by action potential results in a persistent increase in the synaptic connection. (b) Schematic illustration of a Cu₂S gap-type atomic switch in sensory memory (SM), short-term memory (STM), and long-term memory (LTM) states depending on the interval (T) of the input voltage pulse stimulation.