2D Quantum Materials Group

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Facilities

The following is a partial list of experimental equipment installed in our laboratory. Various setups (for crystal growth, device fabrications, optical/electronic properties characterizations) are available, allowing us to perform all processes from sample preparation to device fabrication and its characterization. We also have access to NIMS's advanced microfabrication equipment, such as 125kV and 200kV electron beam lithography equipment and fully automated electron beam deposition equipment.

Characterizations

Microspectroscopy 1

Home-built microspectroscopy system (an upright microscope with a vertical objective lens and an ARS cryostat). Various spectroscopic measurements at cryogenic temperatures are possible.
Microspectroscopy 2

Microspectroscopy system (a Montana Ins cryostat and a nanopositioner). A variety of applications, including spectroscopic measurements using ultrashort pulsed laser at 3.5 K, can be performed.
Optics

Optical system for converting the white light emitted from the supercontinuum light into a parallel beam of desired wavelength (500-2000 nm). A HeNe laser and various semiconductor lasers are also available.
Ultrashort pulsed laser

One-box Ti:sapphire ultrashort pulsed laser (Mai Tai HP). In addition to various time-resolved measurements, it can be used to determine crystal orientation by observing second harmonic generation.
Spectrometers

Aberration-free spectrometer used for microspectroscopy (two IsoPlane 320 and one HRS-300). Used in combination with liquid-nitrogen-cooled CCD, thermoelectrically-cooled CCD, and EMCCD.
Vacuum probe station

This system is used to measure FET properties of devices fabricated. Measurements down to 10 K is possible.
simple probe station

A simple probe station to check device properties at room temperature
Superconducting magnet system

Transport measurements at 4 ～ 300 K and 0 ～ 6 Tesla are possible.
Various meters

For electrical measurements: nanovoltmeters, AC/DC current sources, electrometers, multimeters, lock-in amplifiers

Sample preparations

Molecular beam epitaxy No. 1

MBE growth of various 2D materials are possible. E-beam heating, K-cells, evaporators are used to supply various sources.
Molecular beam epitaxy No. 2

In addition to evaporators and K-cells, RHEED is available to monitor crystal growth.
Metal-organic chemical vapor deposition

A cold-wall MOCVD chamber for crystal growth of 2D materials. Sources are supplied from top of the chamber as vapor, and the source supply can be controlled automatically by a valve on/off system.
Chemical vapor deposition No. 6

A three-furnace CVD chamber for crystal growth of TMD-based 2D materials
Electron beam lithography

Fine patterns can be fabricated with focused electron beam. This is an indispensable setup for device fabrications.
Vacuum deposition

Home-built vacuum deposition system. This is used for deposition of electrodes.
Hydrogen plasma clearner

Home-built plasma clearner for removal of amorphous carbon impurities
Spin coater

This spin coater is mainly used to coat a resist layer for the lithography process.
Manual bonder

This is used to make electrical contacts to devices fabricated.