２）M. Liao, Y. Koide, J. A. ALVAREZ, “Crystal lographic and electrical characterization of tungsten carbide thin films for Schottky contact of diamond photodiode”, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol.24, pp185～189, (2006)

３）Jacques Chevallier, T. Kociniewski, Cecile-Uzan Saguy, Rafi Kalish, Catherine Cytermann, M. Marbe, D. Ballutaud, Alan Deneuville, F. Jomard, Celine Baron, James E Butler, S. Koizumi, “Some recent advances on the n-type doping of diamond”, SOLID STATE PHENOMENA, Vol.108～109, pp703～708, (2006)

４）T. Teraji, H. Wada, M. Yamamoto, K. Arima, T. Ito, "Highly efficient doping of boron into high-quality homoepitaxial diamond films", Diamond Relat. Mater.,in press.

５）S. Mitani, T. Teraji, T. Ito, “Formation of self-assembled platinum particles on diamond and their embedding in diamond by microwave plasma chemical vapor depositions”, DIAMOND AND RELATED MATERIALS, Vol.15, No.10, pp1544～1549,(2006.10)

６）T. Watanabe, T. Teraji, T. Ito, “Fabrication of diamond p?i?p?i?p structures and their electrical and electroluminescence properties under high electric fields” DIAMOND AND RELATED MATERIALS, Vol.16, No.1, pp112～117,(2007.01)

７）T. Teraji, “Chemical vapor deposition of homoepitaxial diamond films”, PHISICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol.203, Number 13, pp3324～3357, (2006)

８）M. Liao, Y. Koide, “High-performance metal-semiconductor-metal deep-ultraviolet photodetectors based on homoepitaxial diamond thin film”, APPLIED PHYSICS LETTERS, Vol.89, pp113509-1～113509-3, (2006)

９）M. Suzuki, S. Koizumi, T. Ono, N. Sakuma, H. Yoshida, T. Sakai, S. Uchikoga, “Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces”, PHISICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol.203, Number 12, pp3128～3135, (2006)

10) J. Pernot, C. Tavares, E. Gheeraert, E. Bustarret, M. Katagiri, S. Koizumi, “Hall electron mobility in diamond”, APPLIED PHYSICS LETTERS, Vol.89, pp122111-1～122111-3, (2006)

11）S. Koizumi, “Growth of Phosphorus Doped n-Type Diamond and the Electrical Properties”, SOLID STATE PHENOMENA, Vol.48, pp1～8, (2006)

12) S. Koizumi, M. Suzuki, “n-Type doping of diamond”, PHISICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol.203, Number 13, pp3358～3366, (2006)

13) M. Katagiri, J. Isoya, S. Koizumi, H. Kanda, “Electron paramagnetic resonance study of phosphorus-doped n-type homoepitaxial diamond films grown by chemical vapor deposition”, PHISICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, Vol.203, Number 13, pp3367～3374, (2006)

14）Y. Koide, M. Liao, J. A. ALVAREZ, “Thermally stable solar-blind diamond UV photodetector”, DIAMOND AND RELATED MATERIALS, Vol.15, pp1962～1966,(2006.12)

15）M. Kazan, P. Masri, M. Sumiya, “Zone center optical phonons in AlxGa1-xN mixed crystals”, JOURNAL OF APPLIED PHYSICS, Vol.100, 013508, (2006)

16) H. Matsumura, M. Sumiya, Y. Kawai, M. Tomiki, K. Murakami, S. Fuke,
“Microfabrication of GaN Groove on sapphire substrate treated selectively by electron beam”, PHISICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Vol.3, No.6, pp1649～1652, (2006.06)

17) T. Matsuoka, Y. Kobayashi, H. Kobayashi, T. Mitate, S. Mizuno, A. Sasaki, M. Yoshimoto, T. Ohnishi, M. Sumiya, “N-polarity GaN on sapphire substrate grown by MOVPE”, PHISICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol.243, No.7, pp1446～1450, (2006.06)

18) F. Fujita, Y. Oshiki, J. Kaneko, A. Homma, K. Tsuji, K. Meguro, Y. Yamamoto, T. Imai, H. Watanabe, T. Teraji, S. Kawamura, M. Furusaka, “Development of a TOF measurement system of charge carrier dynamics in diamond thin films using a UV pulsed laser”, DIAMOND AND RELATED MATERIALS, Vol.15, No.11-12, pp1921～1925,(2006.11)

19) B. Lee, T. Teraji, T. Ito, “Different behaviors of F+ centers due to electron beam irradiations between synthetic sapphire and Be-diffusion-treated natural sapphire”, JOURNAL OF CRYSTAL GROWTH, Vol.292, No. 2, pp546～549, (2006.07)

20) B. Lee, T. Teraji, T. Ito, “Bleaching and micro-cracking phenomena induced in various types of sapphires by keV-electron beam irradiations”, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTI, Vol.248, No. 2, pp311～318, (2006.08)

21) T. Teraji, “ダイヤモンドは次世代デバイス材料になり得るか？”, NEW DIAMOND, Vol.22, No. 1, pp10～10,(2006.01)

22) J. Yu, H.C. Ong, K.Y. Wong, W.M. Lau, S.Matsumoto, “Morphology dependence of cathodluminescence from cubic boron nitride films deposited by chemical vapor deposition”, JOURNAL OF APPLIED PHISICS, Vol.99, No. 12, pp124915-1～5, (2006.06)

23) J. Yu, Z. Zheng, H.C. Ong, K.Y. Wong, S.Matsumoto, W.M. Lau, “Thermal Stability of Cubic Boron Nitride Films Deposited by Chemical Vapor Deposition”, JOURNAL OF PHYSICAL CHEMISTRY B, Vol.110, No. 42, pp21073～21076, (2006.10)