The main research field is the growth of single-crystalline thin films using molecular beams and/or ion beams generated by the Accelerator-Linked- Instrument for Synthesis and Analysis, ALISA. (see following figure)
A single-crystalline film can demonstrate the intrinsic properties. And the model system constructed with the single-crystalline films is useful for probing and understanding the interaction between the material and the surrounding environment. The process adopted here is a non-equilibrium one, which has potential for realizing novel morphology, composition, structure, etc. leading to new properties and/or materials.
Figures, which are the results obtained using the ALISA, are a RHEED pattern of the epitaxial ZnO thin film grown on ZrB2 at room temperature, a AFM topography of Pt single-crystalline grains on silica glass grown through ion-beam process, and a phase diagram at room temperature in Si-C system by ion-beam induced crystallization. |